ALSC AS4C32M16SA Single pulsed ras interface Datasheet

AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR) SDRAM
32Mx16 (8M x 16 x 4 Banks)
512Mbit Single-Data-Rate (SDR) SDRAM
AS4C32M16SA-7TCN & AS4C32M16SA-7TIN
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
1|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR) SDRAM
32Mx16 (8M x 16 x 4 Banks)
REVISION HISTORY
Rev. 1.0 March 2012
initial version
Rev. 1.1 April 2012
Revised Operating-; Standby- and Refresh Currents
Rev. 2.0 February 2014
Die Shrink – A revision
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
2|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR) SDRAM
32Mx16 (8M x 16 x 4 Banks)
Overview
This section gives an overview of the 512M SDRAM product and describes its main characteristics.
Features




















4 banks x 8Mbit x 16 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length:
1, 2, 4, 8 and full page for Sequential Type 1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Pre-charge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 8192 cycles/64 ms
Available in 54 Pin TSOP II
LVTTL Interface
Single +3.3 V ±0.3 V Power Supply
ROHS Compliant*
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
3|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR) SDRAM
32Mx16 (8M x 16 x 4 Banks)
Table 1 - Performance Table
-7
System Frequency (fCK)
143 MHz
Clock Cycle Time (tCK3)
7 ns
Clock Access Time (tAC3) CAS Latency = 3
5.4 ns
Clock Access Time (tAC2) CAS Latency = 2
6 ns
Description
The AS4C32M16SA is a four bank Synchronous DRAM organized as 4 banks x 8Mbit x 16. The
AS4C32M16SA achieves high speed data transfer rates up to 166 MHz by employing a chip
architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
All of the control, address, data input and output circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-leaved fashion allows random access operation to
occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up
to 166 MHz is possible depending on burst length, CAS latency and speed grade of the device.
Table 2 – Ordering Information for ROHS Compliant Products
Product part No
AS4C32M16SA-7TCN
Org
32 x 16
AS4C32M16SA-7TIN
32 x 16
Temperature
Commercial
0°C to 70°C
Industrial
-40°C to 85°C
Max Clock (MHz)
143
Package
54pin TSOP II
143
54pin TSOP II
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
4|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR) SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
5|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
6|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
7|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
8|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Power On and Initialization
The default power on state of the mode register is supplier specific and may be undefined. The following power on and
initialization sequence guarantees the device is preconditioned to each user’s specific needs. Like a conventional DRAM,
the Synchronous DRAM must be powered up and initialized in a predefined manner. During power on, all VCC and
VCCQ pins must be built up simultaneously to the specified voltage when the input signals are held in the “NOP” state.
The power on voltage must not exceed VCC+0.3V on any of the input pins or VCC supplies. The CLK signal must be
started at the same time. After power on, an initial pause of 200 ms is required followed by a precharge of both banks
using the precharge command. To prevent data contention on the DQ bus during power on, it is required that the DQM
and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set
Command must be issued to initialize the Mode Register. A minimum of two Auto Refresh cycles (CBR) are also
required. These may be done before or after programming the Mode Register. Failure to follow these steps may lead to
unpredictable start-up modes.
Programming the Mode Register
The Mode register designates the operation mode at the read or write cycle. This register is divided into 4 fields. A
Burst Length Field to set the length of the burst, an Addressing Selection bit to program the column access sequence in a
burst cycle (interleaved or sequential), a CAS Latency Field to set the access time at clock cycle and a Operation mode
field to differentiate between normal operation (Burst read and burst Write) and a special Burst Read and Single Write
mode. The mode set operation must be done before any activate command after the initial power up. Any content of the
mode register can be altered by re-executing the mode set command. All banks must be in pre-charged state and CKE
must be high at least one clock before the mode set operation. After the mode register is set, a Standby or NOP
command is required. Low signals of RAS, CAS, and WE at the positive edge of the clock activate the mode set
operation. Address input data at this timing defines parameters to be set as shown in the previous table.
Read and Write Operation
When RAS is low and both CAS and WE are high at the positive edge of the clock, a RAS cycle starts. According to
address data, a word line of the selected bank is activated and all of sense amplifiers associated to the wordline are set.
A CAS cycle is triggered by setting RAS high and CAS low at a clock timing after a necessary delay, tRCD, from the RAS
timing. WE is use d to define either a read (WE = H) or a write (WE = L) at this stage.
SDRAM provides a wide variety of fast access modes. In a single CAS cycle, serial data read or write operations are
allowed at up to a 166 MHz data rate. The numbers of serial data bits are the burst length programmed at the mode set
operation, i.e., one of 1, 2, 4, 8 and full page. Column addresses are segmented by the burst length and serial data
accesses are done within this boundary. The first column address to be accessed is supplied at the CAS timing and the
subsequent addresses are generated automatically by the programmed burst length and its sequence. For example, in a
burst length of 8 with interleave sequence; if the first ad-dress is ‘2’, then the rest of the burst sequence is 3, 0, 1, 6, 7, 4,
and 5.
Full page burst operation is only possible using sequential burst type. Full Page burst operation does not terminate
once the burst length has been reached. (At the end of the page, it will wrap to the start address and continue.) In other
words, unlike burst length of 2, 4, and 8, full page burst continues until it is terminated using another command.
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
9|Page
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Similar to the page mode of conventional DRAM’s, burst read or write accesses on any column address
are possible once the RAS cycle latches the sense amplifiers. The maximum t RAS or the refresh interval
time limits the number of random column accesses. A new burst access can be done even before the
previous burst ends. The interrupt operation at every clock cycles is supported. When the previous burst is
interrupted, the remaining addresses are overridden by the new address with the full burst length. An
interrupt which ac-companies with an operation change from a read to a write is possible by exploiting
DQM to avoid bus contention.
When two or more banks are activated sequentially, interleaved bank read or write operations are possible.
With the programmed burst length, alternate access and precharge operations on two or more banks can
realize fast serial data access modes among many different pages. Once two or more banks are activated,
column to column interleave operation can be done between different pages.
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
10 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
11 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
12 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
13 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Recommended Operation and Characteristics for LV-TTL
VSS = 0 V; VCC, VCCQ = 3.3 V ± 0.3 V
Limit Values
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 4.0 mA)
Output low voltage (IOUT = 4.0 mA)
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < VOUT < VCC)
Symbol
min.
max.
Unit
Notes
IH
2.0
Vcc+0.3
V
1, 2
IL
– 0.3
0.8
V
1, 2
OH
2.4
–
V
OL
–
0.4
V
I(L)
–2
2
uA
O(L)
–2
2
uA
V
V
V
V
I
I
Note:
All voltages are referenced to VSS.
VIH may overshoot to VCC + 2.0 V for pulse width of < 4ns with 3.3V. VIL may undershoot to -2.0 V for pulse width
< 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
14 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Operating Currents
VCC = 3.3 V ± 0.3 V ( Recommended Operating Conditions unless otherwise noted )
Max.
Symbol
ICC1
Parameter & Test Condition
Operating Current
t
RC
=t
RCMIN.
,t
RC
=t
CKMIN
.
-7
1 bank operation
ICC2PS
ICC2N
ICC2NS
ICC3N
ICC3P
Note
mA
1
mA
1
mA
1
240
Active-precharge command cycling, without
Burst Operation
ICC2P
Unit
Precharge Standby Current
in Power Down Mode
tCK = min.
CS =VIH, CKE≤ VIL(max)
tCK = Infinity
Precharge Standby Current
in Non-Power Down Mode
tCK = min.
CS =VIH, CKE≥ VIL(max)
tCK = Infinity
No Operating Current
tCK = min, CS = VIH(min)
bank ; active state ( 4 banks)
CKE ≤ V
CKE ≥ V
IH(MIN.)
IL(MAX.)
(Power down mode)
7
5
58
48
mA
mA
75
mA
35
mA
ICC4
Burst Operating Current
tCK = min
Read/Write command cycling
170
ICC5
Auto Refresh Current
tCK = min
Auto Refresh command cycling
160
ICC6
Self Refresh Current
Self Refresh Mode, CKE≤ 0.2V
6
mA
1,2
mA
1
mA
Notes:
These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum
value of tCK and tRC. Input signals are changed one time during t CK.
These parameter depend on output loading. Specified values are obtained with output open.
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
15 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
AC Characteristics
1,2, 3
VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns
Limit Values
-7
#
Symbol
Parameter
Min.
Max.
Unit
Note
Clock and Clock Enable
t
1
CK
t
2
CK
t
3
4
AC
t
7
–
ns
CAS Latency = 2
10
–
ns
CAS Latency = 3
–
143
MHz
CAS Latency = 2
–
100
MHZ
Clock Frequency
Access Time from Clock
2, 3
CAS Latency = 3
–
5.4
ns
CAS Latency = 2
–
6
ns
Clock High Pulse Width
2.5
–
ns
CL
Clock Low Pulse Width
2.5
–
ns
T
Transition Time
0.3
1.5
ns
t
6
CAS Latency = 3
CH
t
5
Clock Cycle Time
Setup and Hold Times
t
7
8
9
10
11
12
13
14
IS
Input Setup Time
1.5
–
ns
4
IH
Input Hold Time
0.8
–
ns
4
CKS
CKE Setup Time
1.5
–
ns
4
CKH
CKE Hold Time
0.8
–
ns
4
MRD
Mode Register Set Command Cycle Time
2
–
CLK
SB
Power Down Mode Entry Time
0
7
ns
DS
Data-in Setup Time
1.5
–
ns
DH
Data-in Hold Time
0.8
–
ns
t
t
t
t
t
t
t
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
16 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Common Parameters
15
16
17
18
19
20
t
RCD
Row to Column Delay Time
15
–
ns
5
Row Precharge Time
15
–
ns
5
RAS
Row Active Time
45
100K
ns
5
RC
Row Cycle Time
65
–
ns
5
RRD
Activate(a) to Activate(b) Command Period
15
–
ns
5
CCD
CAS(a) to CAS(b) Command Period
1
–
CLK
DPL
Data-in to Precharge Command for Manual precharge
2
–
CLK
Refresh Period (8192 cycles)
—
64
ms
Self Refresh Exit Time
1
—
CLK
t
t
RP
t
t
t
t
21
Refresh Cycle
22
23
t
t
REF
SREX
Read Cycle
Limit Values
-7
#
Symbol
t
24
26
27
OH
Data Out Hold Time
LZ
HZ
t
25
t
t
Parameter
DQZ
Min. Max.
Unit
Note
2
2.5
–
ns
Data Out to Low Impedance Time
1
–
ns
Data Out to High Impedance Time
3
7
ns
DQM Data Out Disable Latency
–
2
CLK
Write Recovery Time for Auto precharge
2
–
CLK
DQM Write Mask Latency
0
–
CLK
Write Cycle
28
29
t
t
WR
DQW
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
17 | P a g e
6
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Notes for AC Parameters:
1.
For proper power-up see the operation section of this data sheet.
2.
AC timing tests have VIL = 0.4V and VIH = 2.4V with the timing referenced to the 1.4 V crossover point. The
transition time is measured between VIH and VIL. All AC measurements assume tT = 1ns with the AC output
load circuit shown in Figure 1.
tCK
VIH
CLK
+ 1.4 V
VIL
tIS
tT
tIH
50 Ohm
1.4V
COMMAND
Z=50 Ohm
tAC
tLZ
I/O
tAC
50 pF
tOH
1.4V
OUTPUT
tHZ
Figure 1.
3.
If clock rising time is longer than 1 ns, a time (tT/2 – 0.5) ns has to be added to this parameter.
4.
If tT is longer than 1 ns, a time (tT – 1) ns has to be added to this parameter.
5.
These parameter account for the number of clock cycle and depend on the operating frequency of the
clock, as follows:
the number of clock cycle = specified value of timing period (counted in fractions as a whole number)
Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns
high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit
command is registered.
6.
Referenced to the time which the output achieves the open circuit condition, not to output voltage levels.
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
18 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
19 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
20 | P a g e
AS4C32M16SA
Version 2.0
(SDR)SDRAM
512Mbit Single-Data-Rate
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
21 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
22 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
23 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
24 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
25 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
26 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
27 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
28 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
29 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
30 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
31 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
32 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
33 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
34 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
35 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
36 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
37 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
38 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
39 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
40 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
41 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
42 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
43 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
44 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
45 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
46 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
47 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
48 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
49 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
50 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
51 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
PACKAGE DIAGRAM
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
52 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
53 | P a g e
AS4C32M16SA
Version 2.0
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
54 | P a g e
Similar pages