MJD112 (NPN) MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel MARKING DIAGRAMS (“T4” and “RL” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series 4 1 2 MAXIMUM RATINGS Rating Collector−Emitter Voltage YWW J11x DPAK−3 CASE 369D YWW J11x 3 Symbol Max Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current − Continuous Peak IC 2 4 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation* @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C TJ, Tstg −65 to + 150 °C Operating and Storage Junction Temperature Range DPAK CASE 369C 4 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 Y WW x = Year = Work Week = 2 or 7 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient* RJA 71.4 °C/W *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 5 1 Publication Order Number: MJD112/D MJD112 (NPN) MJD117 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 20 Adc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO − 20 Adc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc Collector−Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO − 10 Adc Emitter−Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc 500 1000 200 − 12,000 − − − 2 3 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) (IC = 2 Adc, VCE = 3 Vdc) (IC = 4 Adc, VCE = 3 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) (IC = 4 Adc, IB = 40 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc) VBE(sat) − 4 Vdc Base−Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(on) − 2.8 Vdc fT 25 − MHz − − 200 100 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob MJD117 MJD112 pF 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. ORDERING INFORMATION Package Type Package Shipping† DPAK 369C 75 Units / Rail DPAK−3 369D 75 Units / Rail MJD112RL DPAK 369C 1800 Tape & Reel MJD112T4 DPAK 369C 2500 Tape & Reel DPAK (Pb−Free) 369C 2500 Tape & Reel DPAK 369C 75 Units / Rail DPAK (Pb−Free) 369C 75 Units / Rail DPAK−3 369D 75 Units / Rail DPAK 369C 2500 Tape & Reel Device MJD112 MJD112−001 MJD112T4G MJD117 MJD117G MJD117−001 MJD117T4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MJD112 (NPN) MJD117 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA ≈8k D1 ≈ 60 +4V 25 s tf 1 0.8 tr 0.6 0.4 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% 0.2 0.04 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.2 0.1 0.03 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 2. Switching Times D = 0.5 0.3 0.1 0.07 0.05 td @ VBE(off) = 0 V PNP NPN Figure 1. Switching Times Test Circuit 1 0.7 0.5 IB1 = IB2 TJ = 25°C 2 t, TIME (s) µ RB 51 VCC = 30 V IC/IB = 250 ts RC SCOPE TUT V2 APPROX +8 V 0 V1 APPROX −12 V 4 VCC −30 V RJC(t) = r(t) RJC RJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) JC(t) 0.05 0.01 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) Figure 3. Thermal Response http://onsemi.com 3 20 30 50 100 200 300 500 1000 MJD112 (NPN) MJD117 (PNP) TA TC 2.5 25 10 7 5 3 2 100s PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) ACTIVE−REGION SAFE−OPERATING AREA 500s 1 0.7 0.5 0.3 0.2 5ms 1ms dc BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.1 TJ = 150°C CURVES APPLY BELOW RATED VCEO 2 3 5 7 10 20 30 50 70 100 200 2 20 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Biased Safe Operating Area TC 125 15 Figure 5. Power Derating 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. C, CAPACITANCE (pF) TC = 25°C 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 4 10 20 40 MJD112 (NPN) MJD117 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 PNP MJD117 6k 6k VCE = 3 V 4k 4k 3k 3k 2k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C 25°C 1k 800 −55 °C 600 400 300 0.04 0.06 0.1 0.4 0.6 1 0.2 IC, COLLECTOR CURRENT (AMP) 2 25°C 2k 1k 800 −55 °C 600 400 300 0.04 0.06 4 VCE = 3 V TC = 125°C 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 3.4 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain TJ = 125°C 3 IC = 0.5 A 2.6 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 3.4 TJ = 125°C 3 2.6 IC = 0.5 A 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1 2 0.2 0.04 0.06 4 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) Figure 9. “On Voltages http://onsemi.com 5 2 4 MJD112 (NPN) MJD117 (PNP) PNP MJD117 +0.8 0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN MJD112 *APPLIED FOR IC/IB < hFE/3 −0.8 25°C TO 150°C −1.6 −2.4 *VC FOR VCE(sat) −55 °C TO 25°C −3.2 −4 25°C TO 150°C VC FOR VBE −4.8 0.04 0.06 0.1 −55 °C TO 25°C 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 +0.8 0 *APPLIES FOR IC/IB < hFE/3 25°C TO 150°C −0.8 −1.6 *VC FOR VCE(sat) 25°C TO 150°C −3.2 −4 −55 °C TO 25°C VB FOR VBE −4.8 0.04 0.06 4 −55 °C TO 25°C −2.4 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 10. Temperature Coefficients 105 104 103 REVERSE FORWARD IC, COLLECTOR CURRENT (A) µ IC, COLLECTOR CURRENT (A) µ 105 VCE = 30 V 102 TJ = 150°C 101 100 10−1 −0.6 −0.4 100°C 25°C −0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE−EMITTER VOLTAGE (VOLTS) 104 103 REVERSE VCE = 30 V 102 101 TJ = 150°C 100°C 100 10−1 +0.6 +0.4 +1.2 +1.4 FORWARD 25°C +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cut−Off Region COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 12. Darlington Schematic http://onsemi.com 6 −1.2 −1.4 MJD112 (NPN) MJD117 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MJD112 (NPN) MJD117 (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. MJD112/D