900V
36A
APT36N90BC3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Super Junction MOSFET
Power Semiconductors
TO
-24
7
D3
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
D
• Extreme dv/dt Rated
• Dual die (parallel)
G
• Popular T-MAX Package
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
APT36N90BC3G
UNIT
Drain-Source Voltage
900
Volts
Continuous Drain Current @ TC = 25°C
36
Continuous Drain Current @ TC = 100°C
23
Symbol Parameter
VDSS
ID
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Volts
Total Power Dissipation @ TC = 25°C
390
Watts
PD
1
96
TJ,TSTG Operating and Storage Junction Temperature Range
TL
dv/
dt
Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125°C)
50
V/ns
8.8
Amps
2
Avalanche Current
EAR
Repetitive Avalanche Energy
2
Single Pulse Avalanche Energy
°C
260
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
EAS
-55 to 150
2.9
( Id = 8.8A, Vdd = 50V )
( Id = 8.8A, Vdd = 50V )
mJ
1940
STATIC ELECTRICAL CHARACTERISTICS
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
3
TYP
MAX
Volts
900
(VGS = 10V, ID = 18A)
UNIT
0.10
0.12
Ohms
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V)
-
-
100
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150°C)
-
50
-
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
-
-
100
nA
2.5
3
3.5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
μA
12-2010
Characteristic / Test Conditions
050-8068 Rev B
Symbol
APT36N90BC3G
Symbol
Characteristic
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Crss
Qg
Qgs
4
VGS = 10V
Gate-Source Charge
VDD = 450V
Total Gate Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Test Conditions
Ciss
TYP
7463
6827
INDUCTIVE SWITCHING
VGS = 15V
VDD = 600V
Turn-off Delay Time
ID = 36A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
nC
ns
RG = 4.3Ω
25
5
INDUCTIVE SWITCHING @ 25°C
VDD = 600V, VGS = 15V
1500
ID = 36A, RG = 4.3Ω
750
5
INDUCTIVE SWITCHING @ 125°C
VDD = 600V, VGS = 15V
2130
Fall Time
UNIT
pF
167
252
38
112
70
20
400
ID = 36A @ 25°C
Rise Time
MAX
μJ
867
ID = 36A, RG = 4.3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Pulsed Source Current
1
VSD
Diode Forward Voltage
3
/dt
t rr
Q rr
IRRM
TYP
Continuous Source Current (Body Diode)
ISM
dv
MIN
Characteristic / Test Conditions
Peak Diode Recovery
dv
36
(Body Diode)
/dt
MAX
UNIT
Amps
96
(VGS = 0V, IS = 18A)
0.8
6
Reverse Recovery Time
(IS = -36A, di/dt = 100A/μs)
Reverse Recovery Charge
(IS = -36A, di/dt = 100A/μs)
Peak Recovery Current
(IS = -36A, di/dt = 100A/μs)
1.2
Volts
10
V/ns
Tj = 25°C
930
Tj = 125°C
1230
Tj = 25°C
35
μC
Tj = 125°C
Tj = 25°C
44
70
Tj = 125°C
Amps
68
ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case
0.3
RθJA
Junction to Ambient
31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.30
D = 0.9
0.25
0.7
0.20
0.5
Note:
0.10
0.3
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-8068 Rev B
12-2010
0.35
0.05
0.1
0.15
t2
t
SINGLE PULSE
0.05
0
t1
10
-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-2
0.1
10-3
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-4
10
UNIT
°C/W
APT36N90BC3G
Typical Performance Curves
120
100
10 &15V
80
ID, DRAIN CURRENT (A)
5.5V
80
60
5V
40
4.5V
20
70
60
50
40
30
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
GS
= 10V @ 47A
VGS = 10V
1.0
VGS = 20V
1
0.9
2
3
4
5
6
30
25
20
15
10
5
0.8
0
10
20
30
40
50
60
70
80
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
0
50
75
100
125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.0
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
1.20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1
35
1.2
1.15
1.10
1.05
1
0.95
0.90
0
2.0
1.5
1.0
0.5
300
1.1
100
ID, DRAIN CURRENT (A)
1.2
1.0
0.9
0.8
0.7
25
2.5
0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0
40
ID, DRAIN CURRENT (A)
V
TJ= 125°C
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
NORMALIZED TO
1.3
IDR, REVERSE
0
0
1.4
TJ= 25°C
10
4V
0
TJ= -55°C
20
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
10μs
10
100μs
1ms
10ms
100ms
DC line
0.6
0
25
50
75
100
125 150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
050-8068 Rev B 12-2010
IC, DRAIN CURRENT (A)
100
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
90
6.5V
APT36N90BC3G
Typical Performance Curves
60,000
Ciss
10,000
C, CAPACITANCE (pF)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
12
Coss
1,000
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
TJ= +150°C
TJ = =25°C
10
70
VDS= 450V
VDS= 720V
6
4
2
0
50
100 150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
350
0
td(off)
250
V
200
DD
R
G
= 600V
= 4.3Ω
T = 125°C
J
L = 100μH
150
100
0
DD
R
G
60
0
tr
40
30
20
10
30
40
50
ID (A)
FIGURE 13, Delay Times vs Current
DD
R
3000
T = 125°C
J
L = 100μH
10
V
= 4.3Ω
50
20
60
G
= 600V
= 4.3Ω
T = 125°C
J
Eon
L = 100μH
2500
EON includes
diode reverse recovery.
2000
1500
Eoff
1000
500
0
30
40
50
60
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
0
10
20
4500
4000
3500
3000
Eon
2500
Eoff
2000
V
1500
DD
= 600V
I = 36A
D
1000
T = 125°C
J
L = 100μH
EON includes
500
0
td(on)
3500
tf
= 600V
SWITCHING ENERGY (μJ)
V
tr, and tf (ns)
VDS= 180V
8
50
0.3 0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
SWITCHING ENERGY (uJ)
10
300
1
050-8068 Rev B 12-2010
D
100
td(on) and td(off) (ns)
IDR, REVERSE DRAIN CURRENT (A)
300
I = 94A
diode reverse recovery.
0
10
20
30
40
50
60
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
0
0
10
20
30
40
50
60
ID (A)
FIGURE 15, Switching Energy vs Current
APT36N90BC3G
Typical Performance Curves
Gate Voltage
TJ = 125°C
TJ = 125°C
Gate Voltage
10%
90%
Collector Current
td(on)
Collector Current
90%
td(off)
tr
5%
10%
5%
10%
Collector Voltage
Collector Voltage
tf
0
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
FigureFigure
19, Inductive
Switching
Test Circuit
20, Inductive
Switching
Test Circuit
TO-247® Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
050-8068 Rev B 12-2010
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)