IXFK100N65X2 IXFX100N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 = = 650V 100A 30m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 100 200 A A IA EAS TC = 25C TC = 25C 15 3.5 A J PD TC = 25C 1040 W dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force (PLUS247) Weight TO-264P PLUS247 G D Tab S PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V 100 nA High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved 50 A 5 mA 30 m DS100684B(03/16) IXFK100N65X2 IXFX100N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 40 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264P Outline 68 S 0.7 10.8 nF 6000 pF 2.6 pF 365 1500 pF pF Crss E1 A E Q R Q1 D1 D R1 4 1 2 3 L1 D2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS x2 e Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2(External) Qg(on) Qgs c b1 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 37 ns 26 ns 90 ns 13 ns 183 nC 60 nC 62 nC RthJC 0.12C/W RthCS 0.15C/W b2 b A Terminals: 1 = Gate 2,4 = Drain 3 = Source PLUS247TM Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD IF = IS , VGS = 0V, Note 1 1.4 V trr QRM IRM 200 IF = 50A, -di/dt = 100A/s 1.7 VR = 100V, VGS = 0V 17.2 ns μC A Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK100N65X2 IXFX100N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 240 100 VGS = 10V 8V 90 VGS = 10V 9V 200 80 7V 8V 160 I D - Amperes I D - Amperes 70 60 50 6V 40 120 7V 80 30 6V 20 40 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 100 3.4 VGS = 10V 8V 90 15 VDS - Volts VGS = 10V 3.0 7V 80 RDS(on) - Normalized 2.6 I D - Amperes 70 6V 60 50 40 30 5V I D = 100A 2.2 1.8 I D = 50A 1.4 1.0 20 0.6 10 4V 0.2 0 0 1 2 3 4 5 6 7 -50 8 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.5 150 1.3 VGS = 10V 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 R DS(on) - Normalized -25 VDS - Volts TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 120 140 160 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 180 200 220 240 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK100N65X2 IXFX100N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 110 140 100 120 90 100 70 I D - Amperes I D - Amperes 80 60 50 40 TJ = 125ºC 25ºC - 40ºC 80 60 40 30 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 200 TJ = - 40ºC 180 120 160 140 25ºC 80 I S - Amperes g f s - Siemens 100 125ºC 60 120 100 80 TJ = 125ºC 60 40 TJ = 25ºC 40 20 20 0 0 0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V Capacitance - PicoFarads I D = 50A 8 V GS - Volts I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK100N65X2 IXFX100N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 90 RDS(on) Limit 80 100 25µs 60 I D - Amperes E OSS - MicroJoules 70 50 40 100µs 10 30 1 20 1ms TJ = 150ºC TC = 25ºC Single Pulse 10 10ms 0 0.1 0 100 200 1 300 400 Fig.500 15. Maximum Transient Thermal Impedance 600 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N65X2(X8-S602) 12-14-15