FQB8N60C / FQI8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description Features • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested • RoHS Compliant D D G S G G DS D2-PAK I2-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB8N60CTM / FQI8N60CTU 600 Unit V 7.5 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) 4.6 A 30 A VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* (Note 1) 14.7 4.5 3.13 mJ V/ns W 147 1.18 -55 to +150 W W/°C °C 300 °C dv/dt PD Power Dissipation (TC = 25°C) TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. ± 30 V 230 mJ Thermal Characteristics Symbol RJC RJA FQB8N60CTM / FQI8N60CTU Parameter 0.85 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 Unit 1 62.5 oC/W 40 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET December 2013 Part Number FQB8N60CTM Top Mark FQB8N60C Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units FQI8N60CTU FQI8N60C I2-PAK Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C VDS = 600 V, VGS = 0 V 1 µA IDSS Zero Gate Voltage Drain Current -- -- VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.75 A -- 8.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 965 1255 pF -- 105 135 pF -- 12 16 pF -- 16.5 45 ns ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 7.5A, RG = 25 Ω (Note 4) VDS = 480 V, ID = 7.5A, VGS = 10 V (Note 4) -- 60.5 130 -- 81 170 ns -- 64.5 140 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC 7.5 A A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.5 A Drain-Source Diode Forward Voltage -- -- 30 VSD -- -- 1.4 V trr Reverse Recovery Time -- 365 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.5 A, dIF / dt = 100 A/µs -- 3.4 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2.L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3.I SD ≤ 7.5 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 2 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 o ID, Drain Current [A] 1 10 0 10 150 C o 25 C ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 10 -1 0 10 2 1 10 o -55 C 0 10 10 4 8 6 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 1 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150℃ ※ Note : TJ = 25℃ -1 0.5 0 5 10 15 10 20 0.2 0.4 ID, Drain Current [A] 2000 10 VGS, Gate-Source Voltage [V] Ciss 1200 Coss 1000 800 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 Crss 400 1.0 1.4 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 8A 200 0 -1 10 1.2 12 1600 1400 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ 0 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET ! (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 8 Operation in This Area is Limited by R DS(on) 10 µs 100 µs 1 10 6 1 ms 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 0 TJ, Junction Temperature [ C] o DC 0 10 4 -1 10 2 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] 100 125 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] 0 D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C ( t) = 0 . 8 5 ℃ /W M a x . 2 . D u t y F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 2 0 .0 1 10 PDM s in g le p u ls e -2 t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 4 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Typical Characteristics FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET 200nF 12V VGS Same Type as DUT 50KΩ Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 6 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET DUT FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 7 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003 ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FQB8N60C / FQI8N60C Rev. C1 9 www.fairchildsemi.com FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™