TI INA214B Voltage output, high or low side measurement, bi-directional zerã¸-drift series current-shunt monitor Datasheet

QFN
Package
INA210, INA211
INA212, INA213
INA214
SC70
Package
www.ti.com
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
Voltage Output, High or Low Side Measurement,
Bi-Directional Zerø-Drift Series
CURRENT-SHUNT MONITOR
Check for Samples: INA210, INA211, INA212, INA213, INA214
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
1
2
•
•
•
•
•
WIDE COMMON-MODE RANGE: –0.3V to 26V
OFFSET VOLTAGE: ±35μV (Max, INA210)
(Enables shunt drops of 10mV full-scale)
ACCURACY:
– ±1% Gain Error (Max over temperature)
– 0.5μV/°C Offset Drift (Max)
– 10ppm/°C Gain Drift (Max)
CHOICE OF GAINS:
– INA210: 200V/V
– INA211: 500V/V
– INA212: 1000V/V
– INA213: 50V/V
– INA214: 100V/V
QUIESCENT CURRENT: 100μA (max)
SC70 PACKAGE: All Models
THIN QFN PACKAGE: INA210, INA213, INA214
REF
INA21x
GND
+2.7V to +26V
The INA210, INA211, INA212, INA213, and INA214
are voltage output current shunt monitors that can
sense drops across shunts at common-mode
voltages from –0.3V to 26V, independent of the
supply voltage. Five fixed gains are available: 50V/V,
100V/V, 200V/V, 500V/V, or 1000V/V. The low offset
of the Zerø-Drift architecture enables current sensing
with maximum drops across the shunt as low as
10mV full-scale.
These devices operate from a single +2.7V to +26V
power supply, drawing a maximum of 100μA of
supply current. All versions are specified over the
extended operating temperature range (–40°C to
+125°C), and offered in an SC70 package. The
INA210, INA213, and INA214 are also offered in a
thin QFN package.
R1
R3
R2
R4
IN-
IN+
SC70
Load
Output
OUT
V+
CBYPASS
0.01mF
to
0.1mF
DESCRIPTION
RSHUNT
Supply
Reference
Voltage
NOTEBOOK COMPUTERS
CELL PHONES
TELECOM EQUIPMENT
POWER MANAGEMENT
BATTERY CHARGERS
WELDING EQUIPMENT
PRODUCT
GAIN
R3 and R4
R1 and R2
INA210
INA211
INA212
INA213
INA214
200
500
1000
50
100
5kW
2kW
1kW
20kW
10kW
1MW
1MW
1MW
1MW
1MW
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2012, Texas Instruments Incorporated
INA210, INA211
INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION (1)
GAIN
PACKAGE
PACKAGE
DESIGNATOR
PACKAGE
MARKING
200V/V
SC70-6
DCK
CET
200V/V
Thin QFN-10
RSW
KNJ
200V/V
SC70-6
DCK
SED
200V/V
Thin QFN-10
RSW
SHQ
INA211A
500V/V
SC70-6
DCK
CEU
INA211B
500V/V
SC70-6
DCK
SEC
INA212A
1000V/V
SC70-6
DCK
CEV
INA212B
1000V/V
SC70-6
DCK
SEC
CFT
PRODUCT
INA210A
INA210B
INA213A
INA213B
INA214A
INA214B
(1)
50V/V
SC70-6
DCK
50V/V
Thin QFN-10
RSW
KPJ
50V/V
SC70-6
DCK
SEF
50V/V
Thin QFN-10
RSW
SHT
100V/V
SC70-6
DCK
CFV
100V/V
Thin QFN-10
RSW
KRJ
100V/V
SC70-6
DCK
SEA
100V/V
Thin QFN-10
RSW
SHU
For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or
refer to our web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
Supply Voltage
Analog Inputs,
VIN+, VIN– (2)
Differential (VIN+)–(VIN–)
Common-Mode
(3)
REF Input
Output
(3)
INA210, INA211,
INA212, INA213, INA214
UNIT
+26
V
–26 to +26
V
GND–0.3 to +26
V
GND–0.3 to (V+) + 0.3
V
GND–0.3 to (V+) + 0.3
V
5
mA
Operating Temperature
–55 to +150
°C
Storage Temperature
–65 to +150
°C
Junction Temperature
+150
°C
Human Body Model (HBM)
4000
V
Charged-Device Model (CDM)
1000
V
Machine Model (MM)
200
V
Human Body Model (HBM)
1500
V
Charged-Device Model (CDM)
1000
V
Machine Model (MM)
100
V
Input Current into Any Pin (3)
ESD Ratings
(version A):
ESD Ratings
(version B):
(1)
(2)
(3)
2
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
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INA210, INA211
INA212, INA213
INA214
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SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, VSENSE = VIN+ – VIN–.
INA210, INA213, and INA214: VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INA211 and INA212: VS = +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INA210, INA211,
INA212, INA213, INA214
PARAMETER
CONDITIONS
MIN
Version A
Version B
TYP
MAX
UNIT
–0.3
26
V
–0.1
26
V
INPUT
Common-Mode Input Range
Common-Mode Rejection
VCM
CMR
VIN+ = 0V to +26V, VSENSE = 0mV
INA210, INA211, INA212,
INA214
INA213
Offset Voltage, RTI (1)
VOS
105
140
dB
100
120
dB
VSENSE = 0mV
±0.55
±35
μV
INA213
±5
±100
μV
INA214
±1
±60
μV
0.1
0.5
μV/°C
±0.1
±10
μV/V
28
35
μA
INA210, INA211, INA212
vs Temperature
dVOS/dT
vs Power Supply
PSR
Input Bias Current
Input Offset Current
VS = +2.7V to +18V, VIN+ = +18V,
VSENSE = 0mV
IB
VSENSE = 0mV
IOS
VSENSE = 0mV
15
±0.02
μA
OUTPUT
Gain, INA210
200
V/V
INA211
G
500
V/V
INA212
1000
V/V
INA213
50
V/V
INA214
100
Gain Error
VSENSE = –5mV to 5mV
vs Temperature
V/V
±0.02
±1
%
3
10
ppm/°C
Nonlinearity Error
VSENSE = –5mV to 5mV
±0.01
%
Maximum Capacitive Load
No sustained oscillation
1
nF
VOLTAGE OUTPUT (2)
RL = 10kΩ to GND
Swing to V+ Power-Supply Rail
Swing to GND
(V+)–0.05
(V+)–0.2
V
(VGND)+0.005
(VGND)+0.05
V
FREQUENCY RESPONSE
Bandwidth
Slew Rate
GBW
CLOAD = 10pF, INA210
14
kHz
CLOAD = 10pF, INA211
7
kHz
CLOAD = 10pF, INA212
4
kHz
CLOAD = 10pF, INA213
80
kHz
CLOAD = 10pF, INA214
30
kHz
0.4
V/μs
25
nV/√Hz
SR
NOISE, RTI (1)
Voltage Noise Density
(1)
(2)
RTI = referred-to-input.
See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).
Copyright © 2008–2012, Texas Instruments Incorporated
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INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
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ELECTRICAL CHARACTERISTICS (continued)
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, VSENSE = VIN+ – VIN–.
INA210, INA213, and INA214: VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INA211 and INA212: VS = +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INA210, INA211,
INA212, INA213, INA214
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
Operating Voltage Range
VS
Quiescent Current
+2.7
IQ
VSENSE = 0mV
65
Over Temperature
+26
V
100
μA
115
μA
TEMPERATURE RANGE
Specified Range
–40
+125
°C
Operating Range
–55
+150
°C
θ JA
Thermal Resistance
SC70
250
°C/W
Thin QFN
80
°C/W
PIN CONFIGURATIONS
DCK PACKAGE
SC70-6
(TOP VIEW)
REF
1
6
OUT
GND
2
5
IN-
V+
3
4
IN+
RSW PACKAGE
THIN QFN-10
(TOP VIEW)
NC
REF
8
GND
9
OUT
10
(1)
7
6
1
NC
V+
(1)
2
5
IN-
4
IN-
3
IN+
IN+
(1) NC denotes no internal connection. Pin can be left floating or connected to any voltage between V– and V+.
4
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INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
TYPICAL CHARACTERISTICS
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INPUT OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
OFFSET VOLTAGE
vs TEMPERATURE
100
80
Population
Offset Voltage (mV)
60
40
20
0
-20
-40
-60
30
35
20
25
10
15
5
0
-5
-10
-15
-20
-25
-30
-35
-80
-100
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Offset Voltage (mV)
Figure 1.
Figure 2.
COMMON-MODE REJECTION
PRODUCTION DISTRIBUTION
COMMON-MODE REJECTION RATIO
vs TEMPERATURE
5
4
Population
CMRR (mV/V)
3
2
1
0
-1
-2
-3
-4
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-5
-50
-25
0
25
50
75
100
125
150
100
125
150
Temperature (°C)
Common-Mode Rejection Ratio (mV/V)
Figure 3.
Figure 4.
GAIN ERROR
PRODUCTION DISTRIBUTION
GAIN ERROR
vs TEMPERATURE
1.0
20 Typical Units Shown
0.8
Population
Gain Error (%)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-0.8
Gain Error (%)
-1.0
-50
-25
0
25
Figure 5.
Copyright © 2008–2012, Texas Instruments Incorporated
50
75
Temperature (°C)
Figure 6.
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INA210, INA211
INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
GAIN
vs FREQUENCY
POWER-SUPPLY REJECTION RATIO
vs FREQUENCY
160
70
INA211
60
140
50
120
|PSRR| (dB)
Gain (dB)
INA212
40
30
INA213
INA214
INA210
20
80
60
VS = +5V + 250mV Sine Disturbance
VCM = 0V
VDIF = Shorted
VREF = 2.5V
40
10
VCM = 0V
VDIF = 15mVPP Sine
0
-10
10
100
20
0
1k
10k
100k
1M
1
10M
COMMON-MODE REJECTION RATIO
vs FREQUENCY
OUTPUT VOLTAGE SWING
vs OUTPUT CURRENT
Output Voltage Swing (V)
80
60
VS = +5V
VCM = 1V Sine
VDIF = Shorted
VREF = 2.5V
1
10
100
1k
10k
100k
V+
(V+) - 0.5
(V+) - 1
(V+) - 1.5
(V+) - 2
(V+) - 2.5
(V+) - 3
VS = 2.7V
to 26V
VS = 2.7V
GND + 3
GND + 2.5
GND + 2
GND + 1.5
GND + 1
GND + 0.5
GND
1M
TA = -40C
TA = +25C
TA = +125C
VS = 2.7V to 26V
0
5
10
15
20
25
30
35
40
Output Current (mA)
Figure 9.
Figure 10.
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = +5V
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = 0V (Shutdown)
50
30
25
40
IB+, IB-, VREF = 0V
Input Bias Current (mA)
Input Bias Current (mA)
100k
VS = 5V to 26V
Frequency (Hz)
30
20
IB+, IB-, VREF = 2.5V
10
0
IB+, IB-, VREF = 0V
and
IB-, VREF = 2.5V
20
15
10
5
IB+, VREF = 2.5V
0
-10
-5
0
6
10k
Figure 8.
100
0
1k
Figure 7.
120
20
100
Frequency (Hz)
140
40
10
Frequency (Hz)
160
|CMRR| (dB)
100
5
10
15
20
25
30
0
5
10
15
20
Common-Mode Voltage (V)
Common-Mode Voltage (V)
Figure 11.
Figure 12.
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25
30
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
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SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INPUT BIAS CURRENT
vs TEMPERATURE
QUIESCENT CURRENT
vs TEMPERATURE
35
100
90
Quiescent Current (mA)
Input Bias Current (mA)
30
25
20
15
10
5
70
60
50
40
30
20
10
-25
0
25
50
75
100
125
25
50
75
100
Temperature (°C)
Figure 13.
Figure 14.
INPUT-REFERRED VOLTAGE NOISE
vs FREQUENCY
0.1Hz to 10Hz VOLTAGE NOISE
(Referred-to-Input)
INA213
INA214
INA210
VS = ±2.5V
VREF = 0V
VIN-, VIN+ = 0V
100
125
150
INA212
INA211
10
10
0
-25
Temperature (°C)
100
1
0
-50
150
Referred-to-Input
Voltage Noise (200nV/div)
0
-50
Input-Reffered Voltage Noise (nV/Öz)
80
1k
10k
VS = ±2.5V
VCM = 0V
VDIF = 0V
VREF = 0V
Time (1s/div)
100k
Figure 16.
STEP RESPONSE
(10mVPP Input Step)
COMMON-MODE VOLTAGE
TRANSIENT RESPONSE
2VPP Output Signal
10mVPP Input Signal
Time (100ms/div)
Common-Mode Voltage (1V/div)
Input Voltage
(5mV/diV)
Figure 15.
Common Voltage Step
0V
Output Voltage
0V
Time (50ms/div)
Figure 17.
Copyright © 2008–2012, Texas Instruments Incorporated
Output Voltage (40mV/div)
Output Voltage
(0.5V/diV)
Frequency (Hz)
Figure 18.
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INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
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TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INVERTING DIFFERENTIAL INPUT OVERLOAD
NONINVERTING DIFFERENTIAL INPUT OVERLOAD
Noninverting Input Overload
2V/div
2V/div
Inverting Input Overload
Output
Output
0V
0V
VS = 5V, VCM = 12V, VREF = 2.5V
VS = 5V, VCM = 12V, VREF = 2.5V
Time (250ms/div)
Time (250ms/div)
Figure 19.
Figure 20.
START-UP RESPONSE
BROWNOUT RECOVERY
Supply Voltage
1V/div
1V/div
Supply Voltage
Output Voltage
Output Voltage
0V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
8
0V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
Time (100ms/div)
Time (100ms/div)
Figure 21.
Figure 22.
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INA212, INA213
INA214
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SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
APPLICATION INFORMATION
BASIC CONNECTIONS
Figure 23 shows the basic connections of the INA210-INA214. The input pins, IN+ and IN–, should be connected
as closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistance.
REF
GND
+2.7V to +26V
RSHUNT
Supply
Reference
Voltage
INA21x
OUT
R1
R3
R2
R4
Load
Output
IN-
IN+
V+
CBYPASS
0.01mF
to
0.1mF
Figure 23. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
On the RSW package, two pins are provided for each input. These pins should be tied together (that is, tie IN+ to
IN+ and tie IN– to IN–).
POWER SUPPLY
The input circuitry of the INA210-INA214 can accurately measure beyond its power-supply voltage, V+. For
example, the V+ power supply can be 5V, whereas the load power supply voltage can be as high as +26V.
However, the output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note
also that the INA210-INA214 can withstand the full –0.3V to +26V in the input pins, regardless of whether the
device has power applied or not.
SELECTING RS
The zero-drift offset performance of the INA210-INA214 offers several benefits. Most often, the primary
advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, nonzero-drift current shunt monitors typically require a full-scale range of 100mV.
The INA210-INA214 series gives equivalent accuracy at a full-scale range on the order of 10mV. This accuracy
reduces shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower
gain INA213 or INA214 to accommodate larger shunt drops on the upper end of the scale. For instance, an
INA213 operating on a 3.3V supply could easily handle a full-scale shunt drop of 60mV, with only 100μV of
offset.
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UNIDIRECTIONAL OPERATION
Unidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in one
direction. The most frequent case of unidirectional operation sets the output at ground by connecting the REF pin
to ground. In unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias
the REF pin to a convenient value above 50mV to get the device output swing into the linear range for zero
inputs.
A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in
this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to
negative currents (inverted voltage polarity at the device input).
BIDIRECTIONAL OPERATION
Bidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in two directions.
In this case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between
0V to V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a
voltage other than half-scale when the bidirectional current is nonsymmetrical.
The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input
conditions the output assumes the same voltage as is applied to the reference input.
INPUT FILTERING
An obvious and straightforward filtering location is at the device output. However, this location negates the
advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input
pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances.
Figure 24 shows a filter placed at the inputs pins.
V+
VCM
RS < 10W
RINT
VOUT
RSHUNT
CF
Bias
RS < 10W
VREF
RINT
Load
Figure 24. Filter at Input Pins
The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors should be kept to 10Ω or less if possible to reduce impact to accuracy.. The internal bias
network shown in Figure 24 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistor add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
10
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Copyright © 2008–2012, Texas Instruments Incorporated
Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3
and R4 (or RINT as shown in Figure 24). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A
factor can be calculated to determine the amount of gain error that is introduced by the addition of external series
resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the
device input pins is given in Equation 1:
(1250 ´ RINT)
Gain Error Factor =
(1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT)
where:
RINT is the internal input resistor (R3 and R4), and
RS is the external series resistance.
(1)
With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.
Table 1. Input Resistance
PRODUCT
GAIN
RINT (kΩ)
INA210
200
5
INA211
500
2
INA212
1000
1
INA213
50
20
INA214
100
10
Table 2. Device Gain Error Factor
PRODUCT
SIMPLIFIED GAIN ERROR FACTOR
INA210
1000
RS + 1000
10,000
INA211
(13 ´ RS) + 10,000
5000
INA212
(9 ´ RS) + 5000
20,000
INA213
(17 ´ RS) + 20,000
10,000
INA214
(9 ´ RS) + 10,000
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 2:
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(2)
For example, using an INA212 and the corresponding gain error equation from Table 2, a series resistance of
10Ω results in a gain error factor of 0.982. The corresponding gain error is then calculated using Equation 2,
resulting in a gain error of approximately 1.77% solely because of the external 10Ω series resistors. Using an
INA213 with the same 10Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84% again
solely because of these external resistors.
Copyright © 2008–2012, Texas Instruments Incorporated
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
11
INA210, INA211
INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
www.ti.com
SHUTTING DOWN THE INA210-INA214 SERIES
While the INA210-INA214 series does not have a shutdown pin, its low power consumption allows powering from
the output of a logic gate or transistor switch that can turn on and turn off the INA210-INA214 power-supply
quiescent current.
However, in current shunt monitoring applications. there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA210-INA214 in shutdown mode shown in Figure 25.
Shutdown
Control
RSHUNT
Supply
Reference
Voltage
REF
INA21x
GND
1MW
R3
1MW
R4
Output
OUT
IN-
IN+
V+
CBYPASS
Load
PRODUCT
R3 and R4
INA210
INA211
INA212
INA213
INA214
5kW
2kW
1kW
20kW
10kW
NOTE: 1MW paths from shunt inputs to reference and INA21x outputs.
Figure 25. Basic Circuit for Shutting Down INA210-INA214 with Grounded Reference
Note that there is typically slightly more than 1MΩ impedance (from the combination of 1MΩ feedback and 5kΩ
input resistors) from each input of the INA210-INA214 to the OUT pin and to the REF pin. The amount of current
flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is
grounded, the calculation of the effect of the 1MΩ impedance from the shunt to ground is straightforward.
However, if the reference or op amp is powered while the INA210-INA214 is shut down, the calculation is direct;
instead of assuming 1MΩ to ground, however, assume 1MΩ to the reference voltage. If the reference or op amp
is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is
required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no
current flows through the 1MΩ path.
Regarding the 1MΩ path to the output pin, the output stage of a disabled INA210-INA214 does constitute a good
path to ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed
across a 1MΩ resistor.
As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25μA
that flows in each of the inputs as long as the shunt common-mode voltage is 3V or higher. Below 2V commonmode, the only current effects are the result of the 1MΩ resistors.
12
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
REF INPUT IMPEDANCE EFFECTS
As with any difference amplifier, the INA210-INA214 series common-mode rejection ratio is affected by any
impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to
most references or power supplies. When using resistive dividers from the power supply or a reference voltage,
the REF pin should be buffered by an op amp.
In systems where the INA210-INA214 output can be sensed differentially, such as by a differential input analogto-digital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF
input can be cancelled. Figure 26 depicts a method of taking the output from the INA210-INA214 by using the
REF pin as a reference.
RSHUNT
Supply
Load
ADC
+2.7V to +26V
REF
INA21x
GND
R1
R3
R2
R4
OUT
Output
IN-
IN+
V+
CBYPASS
0.01mF
to
0.1mF
Figure 26. Sensing INA210-INA214 to Cancel Effects of Impedance on the REF Input
Copyright © 2008–2012, Texas Instruments Incorporated
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
13
INA210, INA211
INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
www.ti.com
USING THE INA210 WITH COMMON-MODE TRANSIENTS ABOVE 26V
With a small amount of additional circuitry, the INA210-INA214 series can be used in circuits subject to transients
higher than 26V, such as automotive applications. Use only zener diode or zener-type transient absorbers
(sometimes referred to as Transzorbs)— any other type of transient absorber has an unacceptable time delay.
Start by adding a pair of resistors as shown in Figure 27 as a working impedance for the zener. It is desirable to
keep these resistors as small as possible, most often around 10Ω. Larger values can be used with an effect on
gain that is discussed in the section on input filtering. Because this circuit is limiting only short-term transients,
many applications are satisfied with a 10Ω resistor along with conventional zener diodes of the lowest power
rating that can be found. This combination uses the least amount of board space. These diodes can be found in
packages as small as SOT-523 or SOD-523.
RSHUNT
Supply
RPROTECT
10W
Load
RPROTECT
10W
Reference
Voltage
REF
INA21x
GND
1MW
R3
1MW
R4
V+
Shutdown
Control
Output
OUT
IN-
IN+
CBYPASS
Figure 27. INA210-INA214 Transient Protection Using Dual Zener Diodes
14
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
In the event that low-power zeners do not have sufficient transient absorption capability and a higher power
transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a
single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total
board area required by the INA210-INA214 with all protective components is less than that of an SO-8 package,
and only slightly greater than that of an MSOP-8 package.
RSHUNT
Supply
RPROTECT
10W
Load
RPROTECT
10W
Reference
Voltage
REF
INA21x
GND
1MW
R3
1MW
R4
V+
Shutdown
Control
Output
OUT
IN-
IN+
CBYPASS
Figure 28. INA210-INA214 Transient Protection Using a Single Transzorb and Input Clamps
Copyright © 2008–2012, Texas Instruments Incorporated
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
15
INA210, INA211
INA212, INA213
INA214
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
www.ti.com
IMPROVING TRANSIENT ROBUSTNESS
Applications involving large input transients with excessive dV/dt above 2kV per microsecond present at the
device input pins may cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be
taken to ensure that external series input resistance does not significantly impact gain error accuracy. For
accuracy purposes, these resistances should be kept under 10Ω if possible. Ferrite beads are recommended for
this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10Ω of resistance at dc and
over 600Ω of resistance at 100MHz to 200MHz are recommended. The recommended capacitor values for this
filter are between 0.01µF and 0.1µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 29.
Shunt
Reference
Voltage
Load
Supply
Device
OUT
REF
1MW
R3
GND
IN-
-
+
MMZ1608B601C
IN+
V+
+2.7V to +26V
0.01mF
to 0.1mF
Output
1MW
R4
0.01mF
to 0.1mF
Figure 29. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B devices are now available with new ESD structures that are not
susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing
latched conditions so they do not have the same sensitivity to the transients that the version A devices have,
thus making the version B devices a better fit for these applications.
16
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com
SBOS437D – MAY 2008 – REVISED NOVEMBER 2012
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (August 2012) to Revision D
•
Page
Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................. 3
Changes from Revision B (June 2009) to Revision C
Page
•
Changed Package/Ordering table to show both silicon versions A and B ........................................................................... 2
•
Added silicon version B ESD ratings to Abs Max table ........................................................................................................ 2
•
Added silicon version B row to Input, Common-Mode Input Range parameter in Electrical Characteristics table .............. 3
•
Corrected typo in Figure 9 .................................................................................................................................................... 6
•
Updated Figure 12 ................................................................................................................................................................ 6
•
Changed Input Filtering section .......................................................................................................................................... 10
•
Added Improving Transient Robustness section ................................................................................................................ 16
Changes from Revision A (June 2008) to Revision B
Page
•
Added RSW package to device photo .................................................................................................................................. 1
•
Added QFN package to Features list ................................................................................................................................... 1
•
Updated front page graphic .................................................................................................................................................. 1
•
Added RSW ordering information to Package/Ordering Information table ........................................................................... 2
•
Added footnote 3 to Electrical Characteristics table ............................................................................................................. 3
•
Added QFN package information to Temperature Range section of Electrical Characteristics table .................................. 3
•
Added RSW package pin out drawing .................................................................................................................................. 4
•
Changed Figure 2 to reflect operating temperature range ................................................................................................... 5
•
Changed Figure 4 to reflect operating temperature range ................................................................................................... 5
•
Changed Figure 6 to reflect operating temperature range ................................................................................................... 5
•
Changed Figure 13 to reflect operating temperature range ................................................................................................. 7
•
Changed Figure 14 to reflect operating temperature range ................................................................................................. 7
•
Added RSW description to the Basic Connections section .................................................................................................. 9
•
Changed 60μV to 100μV in last sentence of the Selecting RS section ............................................................................... 9
Changes from Original (May 2008) to Revision A
Page
•
Changed availability of INA211 and INA212 to currently available in Package/Ordering Information table ........................ 2
•
Deleted first footnote of Electrical Characteristics table ....................................................................................................... 3
•
Changed Figure 7 ................................................................................................................................................................. 5
•
Changed Figure 15 ............................................................................................................................................................... 7
Copyright © 2008–2012, Texas Instruments Incorporated
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Product Folder Links: INA210 INA211 INA212 INA213 INA214
17
PACKAGE OPTION ADDENDUM
www.ti.com
26-Mar-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
INA210AIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CET
INA210AIDCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CET
INA210AIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CET
INA210AIDCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CET
INA210AIRSWR
ACTIVE
UQFN
RSW
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
KNJ
INA210AIRSWT
ACTIVE
UQFN
RSW
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(KNJ ~ NSJ)
INA210BIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SED
INA210BIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SED
INA211AIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEU
INA211AIDCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEU
INA211AIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEU
INA211AIDCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEU
INA211BIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEE
INA211BIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEE
INA212AIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEV
INA212AIDCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEV
INA212AIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEV
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
26-Mar-2013
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
INA212AIDCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CEV
INA212BIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEC
INA212BIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEC
INA213AIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFT
INA213AIDCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFT
INA213AIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFT
INA213AIDCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFT
INA213AIRSWR
ACTIVE
UQFN
RSW
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
KPJ
INA213AIRSWT
ACTIVE
UQFN
RSW
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
KPJ
INA213BIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEF
INA213BIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEF
INA214AIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFV
INA214AIDCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFV
INA214AIDCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFV
INA214AIDCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CFV
INA214AIRSWR
ACTIVE
UQFN
RSW
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
KRJ
INA214AIRSWT
ACTIVE
UQFN
RSW
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
KRJ
INA214BIDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SEA
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Mar-2013
Orderable Device
Status
(1)
INA214BIDCKT
Package Type Package Pins Package
Drawing
Qty
ACTIVE
SC70
DCK
6
250
Eco Plan
Lead/Ball Finish
(2)
Green (RoHS
& no Sb/Br)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
CU NIPDAU
Level-2-260C-1 YEAR
(4)
-40 to 125
SEA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA214 :
• Automotive: INA214-Q1
NOTE: Qualified Version Definitions:
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Mar-2013
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 4
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Feb-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
INA210AIDCKR
SC70
DCK
6
3000
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA210AIDCKR
SC70
DCK
6
3000
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
INA210AIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA210AIDCKT
SC70
DCK
6
250
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA210AIDCKT
SC70
DCK
6
250
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
INA210AIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA210AIRSWR
UQFN
RSW
10
3000
179.0
8.4
1.7
2.1
0.7
4.0
8.0
Q1
INA210AIRSWT
UQFN
RSW
10
250
179.0
8.4
1.7
2.1
0.7
4.0
8.0
Q1
INA210BIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA210BIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA211AIDCKR
SC70
DCK
6
3000
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA211AIDCKR
SC70
DCK
6
3000
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
INA211AIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA211AIDCKT
SC70
DCK
6
250
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA211BIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA211BIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA212AIDCKR
SC70
DCK
6
3000
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
INA212AIDCKT
SC70
DCK
6
250
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Feb-2013
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
INA212AIDCKT
SC70
DCK
6
250
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA212AIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA212BIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA212BIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA213AIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA213AIDCKR
SC70
DCK
6
3000
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA213AIDCKT
SC70
DCK
6
250
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
INA213AIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA213AIDCKT
SC70
DCK
6
250
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA213AIRSWR
UQFN
RSW
10
3000
179.0
8.4
1.7
2.1
0.7
4.0
8.0
Q1
INA213AIRSWT
UQFN
RSW
10
250
179.0
8.4
1.7
2.1
0.7
4.0
8.0
Q1
INA213BIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA213BIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA214AIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA214AIDCKR
SC70
DCK
6
3000
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA214AIDCKT
SC70
DCK
6
250
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
INA214AIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA214AIRSWR
UQFN
RSW
10
3000
179.0
8.4
1.7
2.1
0.7
4.0
8.0
Q1
INA214AIRSWT
UQFN
RSW
10
250
179.0
8.4
1.7
2.1
0.7
4.0
8.0
Q1
INA214BIDCKR
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
INA214BIDCKT
SC70
DCK
6
250
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Feb-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA210AIDCKR
SC70
DCK
6
3000
195.0
200.0
45.0
INA210AIDCKR
SC70
DCK
6
3000
202.0
201.0
28.0
INA210AIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA210AIDCKT
SC70
DCK
6
250
195.0
200.0
45.0
INA210AIDCKT
SC70
DCK
6
250
202.0
201.0
28.0
INA210AIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA210AIRSWR
UQFN
RSW
10
3000
203.0
203.0
35.0
INA210AIRSWT
UQFN
RSW
10
250
203.0
203.0
35.0
INA210BIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA210BIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA211AIDCKR
SC70
DCK
6
3000
195.0
200.0
45.0
INA211AIDCKR
SC70
DCK
6
3000
202.0
201.0
28.0
INA211AIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA211AIDCKT
SC70
DCK
6
250
195.0
200.0
45.0
INA211BIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA211BIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA212AIDCKR
SC70
DCK
6
3000
202.0
201.0
28.0
INA212AIDCKT
SC70
DCK
6
250
202.0
201.0
28.0
INA212AIDCKT
SC70
DCK
6
250
195.0
200.0
45.0
INA212AIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
Pack Materials-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Feb-2013
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA212BIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA212BIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA213AIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA213AIDCKR
SC70
DCK
6
3000
195.0
200.0
45.0
INA213AIDCKT
SC70
DCK
6
250
202.0
201.0
28.0
INA213AIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA213AIDCKT
SC70
DCK
6
250
195.0
200.0
45.0
INA213AIRSWR
UQFN
RSW
10
3000
203.0
203.0
35.0
INA213AIRSWT
UQFN
RSW
10
250
203.0
203.0
35.0
INA213BIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA213BIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA214AIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA214AIDCKR
SC70
DCK
6
3000
195.0
200.0
45.0
INA214AIDCKT
SC70
DCK
6
250
195.0
200.0
45.0
INA214AIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
INA214AIRSWR
UQFN
RSW
10
3000
203.0
203.0
35.0
INA214AIRSWT
UQFN
RSW
10
250
203.0
203.0
35.0
INA214BIDCKR
SC70
DCK
6
3000
180.0
180.0
18.0
INA214BIDCKT
SC70
DCK
6
250
180.0
180.0
18.0
Pack Materials-Page 4
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