BF821, BF823 Small Signal Transistors (PNP) FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the NPN transistors BF820 and BF822 are recommended. .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 especially suited for application in classB video output stages of TV receivers and monitors. Top View MECHANICAL DATA .102 (2.6) .094 (2.4) .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code BF821 = 1W BF823 = 1Y Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage BF821 BF823 –VCBO –VCBO 300 250 V V Collector-Emitter Voltage BF823 –VCEO 250 V Collector-Emitter Voltage BF821 –VCER 300 V Emitter-Base Voltage –VEBO 5 V Collector Current –IC 50 mA Peak Collector Current –ICM 100 mA Power Dissipation at TSB = 50 °C Ptot 3001) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) 4/98 Device on fiberglass substrate, see layout BF821, BF823 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage at –IC = 100 µA, IE = 0 BF821 BF823 –V(BR)CBO –V(BR)CBO 300 250 – – – – V V Collector-Emitter Breakdown Voltage at –IC = 10 mA, IB = 0 BF823 –V(BR)CEO 250 – – V Collector-Emitter Breakdown Voltage at RBE = 2.7 kΩ, –IC = 10 mA BF821 –V(BR)CER 300 – – V Emitter-Base Breakdown Voltage at –IE = 100 µA, IC = 0 –V(BR)EBO 5 – – V Collector-Base Cutoff Current at –VCB = 200 V, IE = 0 –ICBO – – 10 nA 50 10 nA µA Collector-Emitter Cutoff Current at RBE = 2.7 kΩ, –VCE = 250 V at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C –ICER –ICER Collector Saturation Voltage at –IC = 30 mA, –IB = 5 mA –VCEsat – – 0.8 V DC Current Gain at –VCE = 20 V, –IC = 25 mA hFE 50 – – – Gain-Bandwidth Product at –VCE = 10 V, –IC = 10 mA fT 60 – – MHz Feedback Capacitance at –VCE = 30 V, –IC = 0, f = 1 MHz Cre – – 1.6 pF Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)