DSK HER204G Glass passivated rectifier Datasheet

Diode Semiconductor Korea HER201G --- HER208G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.0 A
GLASS PASSIVATED RECTIFIERS
FEATURES
Low cost
Low leakage
DO - 15
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER HER HER HER HER HER HER HER
UNITS
201G 202G 203G 204G 205G 206G 207G 208G
Maximum recurrent peak reverse voltage
VRRM
50
100
200
300
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
I(AV)
2.0
A
IFSM
60.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage @2.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
Maximum reverse recovery time
(Note1)
VF
1.0
1.3
A
100.0
trr
50
75
ns
50
30
pF
(Note2)
CJ
Typical Thermal Resistance
(Note3)
RθJA
50
TJ
- 55 ---- + 175
TSTG
- 55 ---- + 175
Storage temperature range
V
5.0
IR
Typical junction capacitance
Operating junction temperature range
1.7
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to ambient.
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Diode Semiconductor Korea
HER201G --- HER208G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10
N 1.
50
N 1.
t rr
+0.5A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.3 -- FORWARD DERATING CURVE
50\100\200V
1
300\400V
0.1
600\800\1000V
TJ=25
0.01
Pulse width=300
s
0.001
0 0.2
0.4 0.6 0.8 1.0 1.2 1.4
1.6 1.8
1.0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0
0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
20
10
6
HER206G-HER208G
4
TJ =25
2
1
0.1 0.2
0.4
1
2
4
10
20
REVERSE VOLTAGE,VOLTS
40
100
75
100
150 175
125
60
50
AMPERES
HER201G-HER205G
40
50
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
60
25
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
100
z
2.0
AMPERES
AVERAGE FORWARD CURRENT
10
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
40
8.3ms Single Half
Sine-Wave
30
20
10
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
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