Diode Semiconductor Korea HER201G --- HER208G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.0 A GLASS PASSIVATED RECTIFIERS FEATURES Low cost Low leakage DO - 15 Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER HER HER HER HER HER HER HER UNITS 201G 202G 203G 204G 205G 206G 207G 208G Maximum recurrent peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 I(AV) 2.0 A IFSM 60.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @2.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 Maximum reverse recovery time (Note1) VF 1.0 1.3 A 100.0 trr 50 75 ns 50 30 pF (Note2) CJ Typical Thermal Resistance (Note3) RθJA 50 TJ - 55 ---- + 175 TSTG - 55 ---- + 175 Storage temperature range V 5.0 IR Typical junction capacitance Operating junction temperature range 1.7 /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance junction to ambient. www.diode.kr Diode Semiconductor Korea HER201G --- HER208G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 10 N 1. 50 N 1. t rr +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 10/20 ns/cm FIG.3 -- FORWARD DERATING CURVE 50\100\200V 1 300\400V 0.1 600\800\1000V TJ=25 0.01 Pulse width=300 s 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.0 Single Phase Half Wave 60HZ Resistive or Inductive Load 0 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 10 6 HER206G-HER208G 4 TJ =25 2 1 0.1 0.2 0.4 1 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 75 100 150 175 125 60 50 AMPERES HER201G-HER205G 40 50 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 60 25 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 200 100 z 2.0 AMPERES AVERAGE FORWARD CURRENT 10 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 40 8.3ms Single Half Sine-Wave 30 20 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz www.diode.kr