Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA20JT06-CAL VDS RDS(ON) ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 65 mΩ 45 A 110 Features 250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Co-efficient of RDS,ON Suitable for connecting an anti-parallel diode Advantages Applications Compatible with Si MOSFET/IGBT gate-drivers > 20 µs Short-Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Electrical Specifications Absolute Maximum Ratings Parameter Drain – Source Voltage Continuous Drain Current Gate Peak Current Symbol VDS ID IGM Turn-Off Safe Operating Area RBSOA Short Circuit Safe Operating Area SCSOA Reverse Gate – Source Voltage Reverse Drain – Source Voltage Operating and Storage Temperature Conditions VGS = 0 V TVJ < 250 °C TVJ = 250 oC, IG = 1 A, Clamped Inductive Load TVJ = 250 oC, IG = 1 A, VDS = 400 V, Non Repetitive VGS VDS Tj, Tstg Values 600 20 10 ID,max = 20 @ VDS ≤ VDSmax Unit V A A 20 µs 30 40 -55 to 250 V V °C A Electrical Characteristics Parameter Values typ. Symbol Conditions Drain – Source On Resistance RDS(ON) ID = 20 A, IG = 400 mA, Tj = 25 °C ID = 20 A, IG = 500 mA, Tj = 125 °C ID = 20 A, IG = 1000 mA, Tj = 175 °C ID = 20 A, IG = 1000 mA, Tj = 250 °C Gate Forward Voltage VGS(FWD) IG = 1000 mA, Tj = 25 °C IG = 1000 mA, Tj = 250 °C hFE VDS = 5 V, ID = 20 A, Tj = 25 °C VDS = 5 V, ID = 20 A, Tj = 125 °C VDS = 5 V, ID = 20 A, Tj = 175 °C VDS = 5 V, ID = 20 A, Tj = 250 °C 65 90 110 165 3.0 2.7 110 78 73 69 10 100 20 2500 160 min. max. Unit On Characteristics DC Current Gain mΩ V Off Characteristics Drain Leakage Current IDSS Gate – Source Leakage Current IGSS VR = 600 V, VGS = 0 V, Tj = 25 °C VR = 600 V, VGS = 0 V, Tj = 250 °C VGS = -20 V, Tj = 25 °C Ciss Crss/Coss VGS = 0 V, VD = 100 V, f = 1 MHz VD = 100 V, f = 1 MHz µA nA Capacitance Characteristics Input Capacitance Reverse Transfer/Output Capacitance August 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ pF pF Pg1 of 6 Die Datasheet GA20JT06-CAL Figure 1: Typical Output Characteristics at 25 °C Figure 2: Typical Output Characteristics at 125 °C Figure 3: Typical Output Characteristics at 175 °C Figure 4: Typical Output Characteristics at 250 °C Figure 5: Typical Gate Source I-V Characteristics vs. Temperature Figure 4: Normalized On-Resistance and Current Gain vs. Temperature August 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg2 of 6 Die Datasheet Figure 7: Typical Blocking Characteristics August 2014 GA20JT06-CAL Figure 8: Capacitance Characteristics http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg3 of 6 Die Datasheet GA20JT06-CAL Gate Drive Theory of Operation The SJT transistor is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 9. Figure 9: Idealized Gate Current Waveform Gate Currents, IG,pk/-IG,pk and Voltages during Turn-On and Turn-Off An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, QG, for turn-on is supplied by a burst of high gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. , The IG,pon pulse should ideally terminate, when the drain voltage falls to its on-state value, in order to avoid unnecessary drive losses during the steady on-state. In practice, the rise time of the IG,on pulse is affected by the parasitic inductances, Lpar in the package and drive circuit. A voltage developed across the parasitic inductance in the source path, Ls, can de-bias the gate-source junction, when high drain currents begin to flow through the device. The applied gate voltage should be maintained high enough, above the VGS,ON level to counter these effects. A high negative peak current, -IG,off is recommended at the start of the turn-off transition, in order to rapidly sweep out the injected carriers from the gate, and achieve rapid turn-off. While satisfactory turn off can be achieved with VGS = 0 V, a negative gate voltage VGS may be used in order to speed up the turn-off transition. Steady On-State After the device is turned on, IG may be advantageously lowered to IG,steady for reducing unnecessary gate drive losses. The IG,steady is determined by noting the DC current gain, hFE, of the device The desired IG,steady is determined by the peak device junction temperature TJ during operation, drain current ID, DC current gain hFE, and a 50 % safety margin to ensure operating the device in the saturation region with low on-state voltage drop by the equation: , August 2014 , 1.5 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg4 of 6 Die Datasheet GA20JT06-CAL Mechanical Specifications Mechanical Parameters mm 2 112 x 112 mil 2 8.12/6.60 mm 2 12544/10237 mil 2 Thickness 360 µm 14 mil Wafer Size 100 mm 3937 mil 0 deg 0 deg Raster Size 2.85 x 2.85 Area total / active Flat Position Passivation frontside Polyimide Pad Metal (Anode) 4000 nm Al Backside Metal (Cathode) 400 nm Ni + 200 nm Au -system Die Bond Electrically conductive glue or solder Wire Bond Al ≤ 10 mil (Source) Al ≤ 3 mil (Gate) Reject ink dot size Φ ≥ 0.3 mm Store in original container, in dry nitrogen, Recommended storage environment < 6 months at an ambient temperature of 23 °C Chip Dimensions: A C mm E DIE F G D B SOURCE WIREBONDABLE H GATE WIREBONDABLE August 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ mil A 2.85 112 B 2.85 112 C 2.23 88 D 2.29 90 E 0.30 12 F 0.53 21 G 0.44 17 H 0.43 17 Pg5 of 6 Die Datasheet GA20JT06-CAL Revision History Date Revision Comments 2014/08/26 3 Updated Electrical Characteristics 2014/04/29 2 Updated Electrical Characteristics 2014/02/27 1 Updated Electrical Characteristics 2013/12/04 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. August 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg6 of 6 GA20JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/sjt/GA20JT06-CAL_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GA20JT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 27-FEB-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * .model GA20JT06 NPN + IS 5.00E-47 + ISE 1.26E-28 + EG 3.23 + BF 114 + BR 0.55 + IKF 700 + NF 1 + NE 2 + RB 0.26 + RE 0.01 + RC 0.045 + CJC 8.2281E-10 + VJC 3.311262797257 + MJC 0.4811772789929 + CJE 2.33957E-9 + VJE 2.91486059646 + MJE 0.4821112143335 + XTI 3 + XTB -1.2 + TRC1 6.20E-03 + VCEO 600 + ICRATING 20 + MFG GeneSiC_Semiconductor * * End of GA20JT06-CAL SPICE Model April 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1