DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. 1 dbook, halfpage APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. 3 3 2 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange. MBK052 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) VCB (V) PL (W) Gp (dB) ηC (%) 2.7 to 3.1 40 >110 >7 >35 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 30 2 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCES collector-emitter voltage RBE = 0 − 75 V VEBO emitter-base voltage open collector − 2 V ICM peak collector current tp ≤ 100 µs; δ ≤ 10% − 12 A Ptot total power dissipation tp = 100 µs; δ = 10%; Tmb = 25 °C − 500 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C up to 0.2 mm from ceramic cap; t ≤ 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS thermal impedance from junction to heatsink VALUE tp = 100 µs; δ = 10%; note 1 0.24 UNIT K/W Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 30 mA; open emitter 75 − V V(BR)CES collector-emitter breakdown voltage IC = 30 mA; VBE = 0 75 − V ICBO collector leakage current VCB = 40 V; IE = 0 − 3 mA ICES collector leakage current VCE = 40 V; VBE = 0 − 6 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 − 0.6 mA hFE DC current gain VCE = 5 V; IC = 3 A 40 100 APPLICATION INFORMATION RF performance at Th = 25 °C in a common base test circuit. MODE OF OPERATION Class-C; tp = 100 µs; δ = 10% 1998 Jan 30 f (GHz) VCE (V) PL (W) GP (dB) ηC (%) 2.7 to 3.1 40 ≥110 ≥7 ≥35 2.7 to 2.9 40 typ. 130 typ. 8 typ. 42 2.9 to 3.1 40 typ. 120 typ. 7.5 typ. 40 3 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 MBK284 10 handbook, halfpage Gp (dB) 8 ηC 50 ηC MBK285 140 PL halfpage handbook, 2.7 (W) 120 (%) 3.1 2.9 GHz 40 Gp 100 6 30 4 20 80 60 40 10 2 20 0 2.7 2.8 2.9 3 f (GHz) 0 3.1 0 10 VCE = 40 V; class-C; tp = 100 µs; δ = 10%. Fig.2 12 14 18 16 PD (W) 20 VCE = 40 V; class-C; tp = 100 µs; δ = 10%. Power gain and efficiency as functions of frequency; typical values. Fig.3 MGM538 Load power as a function of drive power; typical values. MGM539 8 12 handbook, halfpage handbook, halfpage ZL (Ω) xi Zi RL (Ω) 4 8 0 ri 4 −4 0 2.6 2.8 3 f (GHz) −8 2.6 3.2 VCB = 40 V; class-C; PL = 110 W. Fig.4 2.8 3 f (GHz) 3.2 VCB = 40 V; class-C; PL = 110 W. Input impedance as function of frequency (series components); typical values. 1998 Jan 30 XL Fig.5 4 Load impedance as function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor BLS2731-110 30 handbook, full pagewidth 30 40 L8 C3 L11 L2 RC C2 L6 L7 L1 L4 L10 L9 L3 C1 input output L13 L14 L5 L12 MGM540 Dimensions in mm. The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 1998 Jan 30 5 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 List of components COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2 multilayer ceramic chip capacitor; note 1 100 pF C3 multilayer ceramic chip capacitor 100 nF RC multilayer ceramic chip capacitor in series with SMD resistor 100 nF + 5 Ω L1 stripline; note 2 length 4.5 mm width 10 mm L2 stripline; note 2 length 2.5 mm width 16.4 mm L3 stripline; note 2 length 8.3 mm width 1 mm L4 stripline; note 2 length 8 mm width 1.5 mm L5 stripline; note 2 length 2 mm width 8.9 mm L6 stripline; note 2 length 12.7 mm width 1.2 mm L7 stripline; note 2 length 4.5 mm width 10 mm L8 stripline; note 2 length 2.5 mm width 24.4 mm L9 stripline; note 2 length 4.4 mm width 1 mm L10 stripline; note 2 length 5.2 mm width 1 mm L11 stripline; note 2 length 9.3 mm width 1 mm L12 stripline; note 2 length 2.5 mm width 6 mm L13 stripline; note 2 length 7.8 mm width 1.2 mm L14 stripline; note 2 length 7.5 mm width 1.2 mm CATALOGUE No. Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm. 1998 Jan 30 6 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT423A U1 D A F 3 D1 q c 1 H p U2 E1 E 2 b Q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 mm 5.58 5.04 9.53 9.27 0.16 0.10 12.02 11.76 12.83 12.57 8.82 8.56 10.29 10.03 1.58 1.46 19.18 18.92 3.43 3.17 3.42 2.88 16.64 16.38 22.99 22.73 9.91 9.65 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT423A 1998 Jan 30 EUROPEAN PROJECTION ISSUE DATE 97-04-01 7 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jan 30 8 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 NOTES 1998 Jan 30 9 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 NOTES 1998 Jan 30 10 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 NOTES 1998 Jan 30 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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