Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON • Intermodulation Distortion @ 150 W (PEP) — IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 85 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstanding Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 290 1.66 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Symbol Max Unit RθJC 0.6 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 85 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 85 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICES — — 20 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) (continued) REV 6 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 15 30 120 — Cob — 420 — pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) GPE 10 13 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) η — 45 — % Intermodulation Distortion (1) (VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) IMD — –33 –30 dB Output Power (VCE = 28 Vdc, f = 30 MHz) Pout 150 — — Watts (PEP) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS NOTE: 1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. # # $ # ',+ L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 10 µH Molded Choke L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia. L4 — 5 Turns, 1/8″ Copper Tubing L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic 2 &% C1, C2, C3, C5 — 1709–9680 pF, ARCO 469 C4 — 809–9480 pF, ARCO 466 C6, C8, C11 — ERIE 0.1 µF, 100 V C7 — MALLORY 500 µF, 15 V Electrolytic C9 — UNDERWOOD 1000 pF, 350 V C10 — 10 µF, 50 V Electrolytic R1 — 10 Ω, 25 Watt Wire Wound R2 — 10 Ω, 1.0 Watt Carbon CR1 — 1N4997 REV 6 ' ' " 1 %( % %$% - 8 ! ! (#, ! 376 &%!&%! (#(%%$!! ' ' " 1 !376 ( !! !/2 !&% ! (# (%%$ !! Figure 2. Output Power versus Input Power %# &% $% #% , ! 376 &%!&%! (#(%%$!! , " 1 - 8 ' $&!!) ' % ' %$ Figure 4. Linear Output Power versus Supply Voltage ' ' " 1 - 8 9 9 # ## 9 9 % ## !376 &%!&% ! (# (%%$ !! Figure 5. Intermodulation Distortion versus Output Power % #&##%! % REV 6 :' : ' :" : 1 !376 ( !! #"&) 8 ' % #%%# ' % ' %$ Figure 6. DC Safe Operating Area 3 ° Figure 3. Power Gain versus Frequency - #"&) 8 - 8 Figure 7. Series Input Impedance */2 .15 0 0 0 0 376 !#"&'% &%!&% !%4 #376 !#"&'% &%!&% #$$% $ ' ' " 1 !376 ( !! - #"&) 8 ' ' " 1 !376 ( !! Figure 8. Output Resistance versus Frequency - #"&) 8 Figure 9. Output Capacitance versus Frequency PACKAGE DIMENSIONS A U %$ $ % # !# $ ) %# $ M M Q R B D K J H C E CASE 211–11 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 6 4 $%) ! %%# $ %%# % #