M54HC251 RAD-HARD 8-CHANNEL MULTIPLEXER (3-STATE) ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 17 ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 251 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9408-048 DESCRIPTION The M54HC251 is an high speed CMOS 8-CHANNEL MULTIPLEXER (3-STATE) fabricated with silicon gate C2MOS technology. DILC-16 FPC-16 ORDER CODES PACKAGE FM EM DILC FPC M54HC251D M54HC251K M54HC251D1 M54HC251K1 This Multiplexer features both true (Y) and complement (W) outputs as well as STROBE input. When the STROBE is high, both outputs are in the high impedance state. When enabled, address information on the data select inputs determines which data input is routed to Y and W. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION April 2004 1/10 M54HC251 IEC LOGIC SYMBOLS INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° 4, 3, 2, 1, 15, 14, 13, 12 5 SYMBOL D0 to D7 Y 6 W 7 STROBE 11, 10, 9 8 A, B, C GND VCC 16 NAME AND FUNCTION Multiplexer Inputs Multiplexer Output Complementary Multiplexer Output 3 State Output Enable Input Select Inputs Ground (0V) Positive Supply Voltage TRUTH TABLE INPUTS OUTPUTS STROBE C B A S X L L L L H H H H X L L H H L L H H X L H L H L H L H H L L L L L L L L X : Don’t Care Z : High Impedance 2/10 Y W Z D0 D1 D2 D3 D4 D5 D6 D7 Z D0 D1 D2 D3 D4 D5 D6 D7 M54HC251 LOGIC DIAGRAM This logic diagram has not be used to estimate propagation delays ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage -0.5 to VCC + 0.5 ± 20 V mA IIK DC Input Diode Current IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) 300 mW -65 to +150 °C 265 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 3/10 M54HC251 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage Top Operating Temperature Input Rise and Fall Time tr, tf Value Unit 2 to 6 V 0 to VCC V 0 to VCC V -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns DC SPECIFICATIONS Test Condition Symbol VIH VIL VOH VOL II IOZ ICC 4/10 Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 1.5 3.15 4.2 -40 to 85°C -55 to 125°C Min. Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 Max. 1.5 3.15 4.2 0.5 1.35 1.8 Unit V 0.5 1.35 1.8 2.0 IO=-20 µA 1.9 2.0 1.9 1.9 4.5 IO=-20 µA 4.4 4.5 4.4 4.4 6.0 IO=-20 µA 5.9 6.0 5.9 5.9 4.5 IO=-4.0 mA 4.18 4.31 4.13 4.10 6.0 IO=-5.2 mA 5.68 5.8 5.63 5.60 2.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=20 µA 0.0 0.1 0.1 0.1 V V 6.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VIH or VIL VO = VCC or GND ± 0.5 ±5 ± 10 µA 6.0 VI = VCC or GND 4 40 80 µA V M54HC251 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time (D - Y, W) tPHL Propagation Delay Time (A, B, C -Y, W) tPZL tPZH High Impedance Output Enable Time tPLZ tPHZ High Impedance Output Disable Time Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 RL = 1 K Ω RL = 1 K Ω Typ. Max. 30 8 7 64 16 14 80 20 17 36 11 9 26 13 11 75 15 13 130 26 22 160 32 27 90 18 15 85 17 14 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 165 33 28 200 40 34 115 23 20 105 21 18 Unit Max. 115 23 20 195 39 33 240 48 41 135 27 23 130 26 22 ns ns ns ns ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) Value TA = 25°C Min. Typ. Max. 10 CIN Input Capacitance 5.0 5 CPD Power Dissipation Capacitance (note 1) 5.0 62 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 5/10 M54HC251 TEST CIRCUIT TEST tPLH, tPHL SWITCH Open tPZL, tPLZ VCC tPZH, tPHZ GND CL = 50pF/150pF or equivalent (includes jig and probe capacitance) R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM 1: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle) 6/10 M54HC251 WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle) 7/10 M54HC251 DILC-16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 2.1 2.71 0.083 0.107 a1 3.00 3.70 0.118 0.146 a2 0.63 1.14 0.025 B 1.82 2.39 0.072 b 0.40 0.45 0.50 0.016 0.018 0.020 b1 0.20 0.254 0.30 0.008 0.010 0.012 D 20.06 20.32 20.58 0.790 0.800 0.810 e 7.36 7.62 7.87 0.290 0.300 0.310 e1 0.88 2.54 0.035 0.045 0.094 0.100 e2 17.65 17.78 17.90 0.695 0.700 0.705 e3 7.62 7.87 8.12 0.300 0.310 0.320 F 7.29 7.49 7.70 0.287 0.295 0.303 I 3.83 0.151 K 10.90 12.1 0.429 0.476 L 1.14 1.5 0.045 0.059 0056437F 8/10 M54HC251 FPC-16 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 6.75 6.91 7.06 0.266 0.272 0.278 B 9.76 9.94 10.14 0.384 0.392 0.399 C 1.49 1.95 0.059 D 0.102 0.127 0.152 0.004 0.005 0.006 E 8.76 8.89 9.01 0.345 0.350 0.355 F 0.077 1.27 G 0.38 H 6.0 L 18.75 M 0.33 0.050 0.43 0.48 0.015 0.017 0.019 0.237 0.38 N 22.0 0.738 0.43 0.013 0.867 0.015 4.31 0.017 0.170 G F D H 9 16 A N L 8 1 H E B M C 0016030E 9/10 M54HC251 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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