AP4531GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance RDS(ON) ▼ Fast Switching Performance ID 40V 32mΩ 7.4A P-CH BVDSS S1 G1 S2 G2 Description TO-252-4L -40V RDS(ON) 90mΩ ID -4.7A D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 40 -40 V ±20 ±20 V Continuous Drain Current 3 7.4 -4.7 A Continuous Drain Current 3 6.1 -3.7 A 40 -40 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 3.125 W Linear Derating Factor 0.025 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 12 ℃/W 40 ℃/W 201101071-1/7 AP4531GH o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Min. Typ. 40 - - V VGS=10V, ID=6A - - 32 mΩ VGS=4.5V, ID=4A - - 45 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=6A - 6 - S Drain-Source Leakage Current (Tj=25 C) VDS=40V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=6A - 6.7 14 nC Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Test Conditions o IGSS 2 VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=32V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 - nC 2 td(on) Turn-on Delay Time VDS=20V - 4.5 - ns tr Rise Time ID=6A - 15 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns tf Fall Time RD=3.3Ω - 2.8 - ns Ciss Input Capacitance VGS=0V - 450 720 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.5 2.3 Ω Min. Typ. IS=2.4A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC 2/7 AP4531GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Test Conditions Typ. -40 - - V VGS=-10V, ID=-4A - - 90 mΩ VGS=-4.5V, ID=-3A - - 130 mΩ VDS=VGS, ID=-250uA -1 - -3 V VGS=0V, ID=-250uA 2 Max. Units VDS=-10V, ID=-4A - 4 - S o VDS=-40V, VGS=0V - - -10 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=-4A - 6.4 10 nC Drain-Source Leakage Current (Tj=25 C) IGSS Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-32V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.5 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 6.5 - ns tr Rise Time ID=-4A - 13.5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 20 - ns tf Fall Time RD=5Ω - 5 - ns Ciss Input Capacitance VGS=0V - 480 770 pF Coss Output Capacitance VDS=-25V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. IS=-2.4A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-4A, VGS=0V - 22 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 17 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 3/7 AP4531GH N-Channel 40 40 30 20 V G =3.0V 30 20 V G =3.0V 10 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 36 ID=4A ID=6A V G =10V T C =25 o C Normalized RDS(ON) 34 RDS(ON) (mΩ) 10V 7.0V 5.0V 4.5V T C = 150 C ID , Drain Current (A) ID , Drain Current (A) o 10V 7.0V 5.0V 4.5V o T C = 25 C 32 30 28 1.4 1.0 26 0.6 24 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 T j =150 o C 6 Normalized VGS(th) (V) IS(A) 8 T j =25 o C 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4531GH N-Channel f=1.0MHz 1000 I D =6A V DS =32V C iss 8 C (pF) VGS , Gate to Source Voltage (V) 12 100 C oss C rss 4 10 0 0 4 8 12 1 16 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 100us 1ms 10ms 100ms 1s 1 o 0.1 T A =25 C Single Pulse DC 0.01 Normalized Thermal Response (R thja) 100 ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75℃/W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 ID , Drain Current (A) V DS =5V VG 30 T j =25 o C QG T j =150 o C 4.5V 20 QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4531GH P-Channel 20 30 -ID , Drain Current (A) -ID , Drain Current (A) 16 20 10 V G = - 3.0V 12 8 V G = - 3.0V 4 0 0 0 1 2 3 4 5 0 6 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.8 I D = -3 A o T C =25 C 1.6 100 Normalized RDS(ON) RDS(ON) (mΩ) -10V -7.0V -5.0V -4.5V T C = 150 o C -10V -7.0V -5.0V -4.5V o T C = 25 C 80 I D = -4A V G = -10V 1.4 1.2 1.0 0.8 0.6 60 2 4 6 8 -50 10 -V GS ,Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.4 8 Normalized -VGS(th) (V) 1.2 -IS(A) 6 T j =150 o C T j =25 o C 4 1.0 0.8 2 0 0.6 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4531GH P-Channel f=1.0MHz 10000 10 I D = -4 A V DS = -32 V 8 1000 C iss C (pF) -VGS , Gate to Source Voltage (V) 12 6 4 100 C oss C rss 2 0 10 0 4 8 12 16 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 100us -ID (A) 10 1ms 10ms 100ms 1s 1 o 0.1 DC T A =25 C Single Pulse 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + T A 0.01 Rthja=75℃/W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 VG V DS =-5V -ID , Drain Current (A) 16 T j =25 o C QG T j =150 o C 12 -4.5V QGS QGD 8 4 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L) A Millimeters SYMBOLS B MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 1.27 REF. P S E3 C M R D S P 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 1.All Dimensions Are in Millimeters. G 2.Dimension Does Not Include Mold Protrusions. H K J L Part Marking Information & Packing : TO-252(4L) Part Number Package Code meet Rohs requirement 4531GH LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence