LED Chip Infrared Product No: Radiation Infrared Type AlGaAs, DDH OPC8500-11 Electrodes P (anode) up typ. dimension (µm) typ. thickness 160 ± 25 µm anode - gold alloy, 1.5 µm cathode - gold alloy 0.5 µm structured, 25% covered Dimensions Electrical & Optical Characteristics (Ta = 25ºC) ITEMS SYMBOL CONDITIONS MIN TYP Forward Voltage Vf If=100mA -- 1.35 -- V Forward Voltage Vf If=350mA -- 1.7 1.9 V Reverse Voltage Vr Ir=100μA 5 -- -- V Radiant Power* Φe If=20mA 4 -- mW -- MAX UNIT Radiant Power* Φe If=350mA -- 60 -- mW Switching Time tr, tf If=20mA -- 15; 20 -- ns Peak Wavelength λp If=350mA 840 850 860 nm Spectral Bandwidth at 50% ∆λ0.5 If=350mA -- 45 -- nm *Measured on bare chip on TO-18 header Absolute Maximum Ratings (Ta = 25ºC) ITEMS SYMBOL Forward DC Current If RATINGS UNIT 500 mA We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 2014-04-04 Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: www.marktechopto.com 518-785-4725 • EMAIL: [email protected] 1