AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description Product Summary The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS RDS(ON) (at VGS=10V) 100V 28A < 35mΩ RDS(ON) (at VGS = 7V) < 42mΩ ID (at VGS=10V) 100% UIS Tested 100% Rg Tested D1 Top View S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 DFN5X6 EP2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current TA=25°C TA=25°C Power Dissipation A Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State 28 A 39 mJ W 22 1.7 RθJA RθJC www.aosmd.com W 1.1 TJ, TSTG Symbol t ≤ 10s A 56 PDSM TA=70°C Junction and Storage Temperature Range Rev 0: Feb 2010 5 PD TC=100°C A 4 EAS, EAR TC=25°C V 18 IAS, IAR Avalanche energy L=0.1mH C Units V 55 IDSM C S2 28 IDM TA=70°C Power Dissipation B Maximum 100 ±25 ID TC=100°C Continuous Drain Current D2 -55 to 150 Typ 20 60 1.8 °C Max 24 72 2.2 Units °C/W °C/W °C/W Page 1 of 1 AON6850 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 50 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.5 VGS=10V, VDS=5V 55 VGS=10V, ID=5A TJ=125°C VGS=7V, ID=4A 100 nA 4 V 27 35 46 56 32 42 mΩ 1 V 45 A A Forward Transconductance VDS=5V, ID=5A 15 VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=5A µA 3.4 gFS IS Units V TJ=55°C Static Drain-Source On-Resistance Max 10 IGSS RDS(ON) Typ mΩ S 1220 1530 1840 pF 108 155 202 pF 39 66 93 pF 0.3 0.7 1.1 Ω 19 24 29 nC 7 9 11 nC 4.8 8 11.2 nC 11 VGS=10V, VDS=50V, RL=9.8Ω, RGEN=3Ω ns 5.5 ns 16 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs 16 23 30 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 58 83 108 4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Feb 2010 www.aosmd.com Page 2 of 7 AON6850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 8V 50 VDS=5V 50 7.5V 40 30 ID(A) ID (A) 40 7V 30 20 20 VGS=6V 10 125°C 10 25°C 0 0 0 1 2 3 4 0 5 2 40 Normalized On-Resistance RDS(ON) (mΩ) 6 8 10 2 VGS=7V 35 30 VGS=10V 25 20 1.8 VGS=10V ID=5A 1.6 17 5 2 10 VGS=7V 1.4 1.2 ID=4A 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 1.0E+02 60 ID=5A 55 1.0E+01 40 125°C 50 45 IS (A) RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 1.0E+00 125°C 1.0E-01 25°C 35 1.0E-02 25°C 30 1.0E-03 25 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Feb 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2200 10 1800 Capacitance (pF) 8 VGS (Volts) 2000 VDS=50V ID=5A 6 4 2 Ciss 1600 1400 1200 1000 800 600 Coss Crss 400 200 0 0 0 5 10 15 20 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 160 10µs 100µs DC 1.0 1ms TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 Power (W) 10µs 10.0 ID (Amps) 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics 50 200 100.0 10 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 1 10 VDS (Volts) 100 1000 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=2.2°C/W 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Feb 2010 www.aosmd.com Page 4 of 7 AON6850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C TA=100°C TA=125°C TA=150°C 10.0 Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 1.0 50 40 30 20 10 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 1000 40 30 Power (W) Current rating ID(A) TA=25°C 20 100 10 10 1 1E-04 0.001 0.01 0 0 25 50 75 100 125 150 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.1 1 10 100 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 17 5 2 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=72°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Feb 2010 www.aosmd.com Page 5 of 7 AON6850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25ºC 90 25 20 20 15 125ºC 60 Qrr 30 25ºC Irm 0 10 5 5 0 0 5 10 15 20 25 trr Is=20A 125ºC 0.5 125ºC 5 10 2.5 Irm 0 0 200 400 20 600 800 1 25ºC 10 5 0 1000 0 0 www.aosmd.com 200 400 0.5 S 125º di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0: Feb 2010 1.5 trr 25ºC 10 25ºC 2 125ºC trr (ns) 15 125ºC 30 Is=20A Irm (A) Qrr (nC) 90 25ºC 25 40 25 20 30 20 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 120 60 0 15 30 Qrr 1 S 0 30 150 1.5 25ºC IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 180 25ºC 0 30 2.5 2 15 10 125ºC di/dt=800A/µs S Qrr (nC) 120 25 3 S 125ºC 30 trr (ns) di/dt=800A/µs 150 30 Irm (A) 180 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6850 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Feb 2010 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7