MOSFET SMD Type N-Channel MOSFET AO6424A (KO6424A) ( SOT-23-6 ) Unit: mm +0.1 ■ Features ● VDS (V) = 30V 6 5 4 1 2 3 0.4 0.4 -0.1 0.55 ● RDS(ON) ＜ 35mΩ (VGS = 10V) ● RDS(ON) ＜ 48mΩ (VGS = 4.5V) +0.2 2.8 -0.1 +0.2 1.6 -0.1 ● ID =6.5 A (VGS = 10V) +0.02 0.15 -0.02 +0.01 -0.01 +0.1 1.1 -0.1 +0.2 -0.1 0-0.1 +0.1 0.68 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA RthJL Unit V 6.5 5 A 27 2.5 1.5 W 50 85 ℃/W 30 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO6424A (KO6424A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250 uA Static Drain-Source On-Resistance RDS(On) ID=250μA, VGS=0V Min Typ 30 Forward Transconductance gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 1.2 Qgs Gate Drain Charge Qgd VDS=5V, ID=5A VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=5A 1.4 4.2 6.3 12 3.2 8 0.65 td(off) Diode Forward Voltage VGS=10V, VDS=15V, RL=3Ω,RG=3Ω IF= 5A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking 4T** www.kexin.com.cn nC ns 17.5 2.5 IS VSD Ω 1.75 Turn-Off DelayTime Qrr pF 35 VGS=0V, VDS=0V, f=1MHz 3 Body Diode Reverse Recovery Charge S 50 2.5 Maximum Body-Diode Continuous Current 2 8 270 tr tf mΩ 48 td(on) trr V VGS=10V, ID=5A Turn-On DelayTime Turn-Off Fall Time 2.4 35 Turn-On Rise Time Body Diode Reverse Recovery Time nA 53 TJ=125℃ uA ±100 VGS=10V, ID=5A Qg Gate Source Charge Unit V VGS=4.5V, ID=4A Input Capacitance Max 10 2.3 nC 3 A 1 V MOSFET SMD Type N-Channel MOSFET AO6424A (KO6424A) ■ Typical Characterisitics 30 10V 15 7V VDS=5V 4.5V 20 ID(A) ID (A) 10 4V 10 125°C 5 3.5V 25°C VGS=3V 0 0 1 2 3 4 0 5 0 1 60 4 5 6 Normalized On-Resistance 1.8 50 RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) VGS=4.5V 40 30 VGS=10V 20 10 2 1.4 1.2 2 4 6 VGS=4.5V ID=4A 1 0.8 0 VGS=10V ID=5A 1.6 8 0 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 100 50 1.0E+01 ID=5A 1.0E+00 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 80 60 1.0E-02 25°C 125°C 1.0E-03 40 1.0E-04 25°C 20 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO6424A (KO6424A) ■ Typical Characterisitics 10 500 VDS=15V ID=5A 400 Capacitance (pF) VGS (Volts) 8 6 4 200 2 100 0 0 0 2 4 6 8 Ciss 300 Coss Crss 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 TJ(Max)=150°C TA=25°C ID (Amps) RDS(ON) limited 100µs 1.0 1ms DC 100 10 TJ(Max)=150°C TA=25°C 0.0 0.01 Zθ JA Normalized Transient Thermal Resistance 10ms Power (W) 10µs 10µs 1 . 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=85°C/W 0.1 PD 0.01 0.001 1E-05 Single Pulse 0.0001 0.001 0.01 Ton 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 30 1000 10.0 10 25 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 20 www.kexin.com.cn T 10 100