BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA APPLICATIONS Case: SOD-57 • Switched mode power supplies Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 • High-frequency inverter circuits Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV26E BYV26E-TR 5000 per 10" tape and reel 25 000 BYV26E BYV26E-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV26A VR = 200 V; IF(AV) = 1 A SOD-57 BYV26B VR = 400 V; IF(AV) = 1 A SOD-57 BYV26C VR = 600 V; IF(AV) = 1 A SOD-57 BYV26D VR = 800 V; IF(AV) = 1 A SOD-57 BYV26E VR = 1000 V; IF(AV) = 1 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION See electrical characteristics PART SYMBOL VALUE UNIT BYV26A VR = VRRM 200 V BYV26B VR = VRRM 400 V BYV26C VR = VRRM 600 V BYV26D VR = VRRM 800 V BYV26E VR = VRRM 1000 V IFSM 30 A tp = 10 ms, half sine wave Average forward current Non repetitive reverse avalanche energy I(BR)R = 1 A, inductive load Junction and storage temperature range IF(AV) 1 A ER 10 mJ Tj = Tstg - 55 to + 175 °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient Rev. 1.8, 04-Sep-12 TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, TL = constant RthJA 45 K/W Document Number: 86040 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Reverse current SYMBOL MIN. TYP. MAX. UNIT IF = 1 A PART VF - - 2.5 V IF = 1 A, Tj = 175 °C VF - - 1.3 V VR = VRRM IR - - 5 μA VR = VRRM, Tj = 150 °C IR = 100 μA Reverse breakdown voltage IF = 0.5 A, IR = 1 A, iR = 0.25 A Reverse recovery time IR - - 100 μA BYV26A V(BR)R 300 - - V BYV26B V(BR)R 500 - - V BYV26C V(BR)R 700 - - V BYV26D V(BR)R 900 - - V BYV26E V(BR)R 1100 - - V BYV26A trr - - 30 ns BYV26B trr - - 30 ns BYV26C trr - - 30 ns BYV26D trr - - 75 ns BYV26E trr - - 75 ns 600 1.2 VR = VRRM RthJA = 45 K/W 500 RthJA = 100 K/W 200 V 400 400 V 300 600 V 200 800 V 100 1000 V IFAV - Average Forward Current (A) PR - Max. Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 0 1.0 RthJA = 45 K/W 0.8 0.6 0.4 RthJA = 100 K/W 0.2 0 0 40 80 120 160 200 0 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 80 120 160 200 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 10 VR = VRRM Tj = 175 °C IF - Forward Current (A) IR - Reverse Current (μA) 40 Tamb - Ambient Temperature (°C) 959730 Tj - Junction Temperature (°C) 959728 100 10 1 0.1 1 Tj = 25 °C 0.1 0.01 0.001 0 959729 40 80 120 160 200 Tj - Junction Temperature (°C) Fig. 2 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 04-Sep-12 0 959731 1 2 3 4 5 6 7 VF - Forward Voltage (V) Fig. 4 - Max. Reverse Current vs. Junction Temperature Document Number: 86040 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors 40 40 f = 1 MHz CD - Diode Capacitance (pF) CD - DiodeCapacitance (pF) f = 1 MHz 35 30 BYV26C 25 20 15 10 5 35 30 BYV26E 25 20 15 10 0 5 0 0.1 1 16380 10 100 0.1 VR - Reverse Voltage (V) 16381 Fig. 5 - Diode Capacitance vs. Reverse Voltage 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 04-Sep-12 Document Number: 86040 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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