AP73T03AGMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance BVDSS 30V RDS(ON) 9.5mΩ ID 52A G ▼ RoHS Compliant & Halogen-Free S D Description AP73T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D D D S S S G PMPAK ® 5x6 Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip), VGS @ 10V ID@TA=25℃ ID@TA=70℃ 52 A 3 18.1 A 3 14.4 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 160 A PD@TC=25℃ Total Power Dissipation 41.6 W PD@TA=25℃ Total Power Dissipation 5 W 28.8 mJ 4 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 3 ℃/W 25 ℃/W 1 201212252 AP73T03AGMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 9.5 mΩ VGS=4.5V, ID=20A - - 16 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 40 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=20A - 6 9.6 nC Qgs Gate-Source Charge VDS=15V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC td(on) Turn-on Delay Time VDS=15V - 8 - ns tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω - 21 - ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 630 1008 pF Coss Output Capacitance VDS=15V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 3.1 6.2 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=10A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , IAS=24A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP73T03AGMT-HF 120 160 10V 7.0V 6.0V T C = 150 o C 10V 7.0V 6.0V 100 120 ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 5.0V 80 V G = 4.0V 5.0V 80 V G = 4.0V 60 40 40 20 0 0 0 2 4 6 8 10 12 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 10 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 12 1.8 I D =20A V G =10V I D = 20 A o T C =25 C 1.6 Normalized RDS(ON) RDS(ON) (mΩ) 10 8 1.4 1.2 1.0 6 0.8 4 0.6 2 4 6 8 10 -50 0 V GS , Gate-to-Source Voltage (V) 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 30 1.6 I D =1mA 24 Normalized VGS(th) IS(A) 1.2 18 T j =150 o C T j =25 o C 12 0.8 0.4 6 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP73T03AGMT-HF f=1.0MHz 1000 10 800 8 C (pF) VGS , Gate to Source Voltage (V) I D = 20 A V DS =15V 6 C iss 600 4 400 2 200 0 0 C oss C rss 0 4 8 12 16 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10 10ms 100ms DC T C =25 o C Single Pulse Normalized Thermal Response (Rthjc) 1000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T c Single Pulse 0.01 1 0.1 1 10 0.00001 100 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 80 100 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 80 60 40 T j =150 o C 20 60 40 20 o T j =25 C T j =-40 o C 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 4