HAF1009(L), HAF1009(S) Silicon P Channel MOS FET Series Power Switching REJ03G0029-0100Z (Previous ADE-208-1525 (Z)) Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK 2, 4 D 4 4 1 Gate resistor G Tempe– rature sencing circuit Latch circuit 1 1 Gate shut– down circuit S 3 Rev.1.00, May.13.2003, page 1 of 10 2 2 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF1009(L), HAF1009(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS –16 V Gate to source voltage VGSS 2.5 V Drain current ID –40 A –80 A Note1 Drain peak current ID (pulse) Body-drain diode reverse drain current IDR –40 A Channel dissipation PchNote2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Typical Operation Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Input voltage VIH –3.5 — — V VIL — — –1.2 V IIH1 — — –100 µA Vi = –8 V, VDS = 0 IIH2 — — –50 µA Vi = –3.5 V, VDS = 0 IIL — — –1 µA Vi = –1.2 V, VDS = 0 Input current (Gate non shut down) Input current (Gate shut down) Test Conditions IIH(sd)1 — –0.8 — mA Vi = –8 V, VDS = 0 IIH(sd)2 — –0.35 — mA Vi = –3.5 V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage Vop –3.5 — –12 V Rev.1.00, May.13.2003, page 2 of 10 HAF1009(L), HAF1009(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 –10 — — A VGS = –3.5, VDS = –2 V Drain current ID2 — — –10 mA VGS = –1.2V, VDS = –2 V Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –16 — — V IG = –800 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS 2.5 — — V IG = 100 µA, VDS = 0 Gate to source leak current IGSS1 — — –100 µA VGS = –8 V, VDS = 0 IGSS2 — — –50 µA VGS = –3.5 V, VDS = 0 IGSS3 — — –1 µA VGS = –1.2 V, VDS = 0 IGSS4 — — 100 µA VGS = 2.4 V, VDS = 0 IGS(OP)1 — –0.8 — mA VGS = –8 V, VDS = 0 IGS(OP)2 — –0.35 — mA VGS = –3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.1 — –2.15 V VDS = –10 V, ID = –1 mA Forward transfer admittance |yfs| 8.4 14.8 — S ID = –20 A, VDS = –10 VNote3 Static drain to source on state RDS(on) — 33 50 mΩ ID = –20 A, VGS = –4 VNote3 resistance RDS(on) — 20 27 mΩ ID = –20 A, VGS = –10 VNote3 Output capacitance Coss — 1500 — pF VDS = –10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 10.6 — µs Rise time tr — 45 — µs VGS = -10 V, ID= –20 A, RL = 1.5 Ω Turn-off delay time td(off) — 12 — µs Fall time tf — 13 — µs Body–drain diode forward voltage VDF — –0.95 — V IF = –40 A, VGS = 0 Body–drain diode reverse recovery time trr — 100 — ns IF = –40 A, VGS = 0 diF/dt = 50 A/µs Over load shut down tos1 — 4.1 — ms VGS = –5 V, VDD = –16 V tos2 — 1.5 — ms VGS = –5 V, VDD = –24 V Input current (shut down) operation time Note4 Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. Rev.1.00, May.13.2003, page 3 of 10 HAF1009(L), HAF1009(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area -500 Drain Current ID (A) 60 40 20 0 50 100 Case Temperature -50 Drain Current ID (A) Thermal shut down operation area -200 -40 -30 150 -100 200 0 -20 DC -10 PW Op er at -5 Operation -2 in this area -1 is limited by RDS(on) -1 -2 ion -50 -8 V -20 -10 = c= µs m s 10 m (T 25 s °C ) -5 -10 -20 -50 -100 Typical Transfer Characteristics V DS = -10 V Pulse Test -4 V VGS = -3.5 V 1 Drain to Source Voltage VDS (V) Tc (°C) -10 V 10 -0.5 Typical Output Characteristics -6 V -5 V -50 -0.5 Ta = 25°C -0.3 Drain Current ID (A) Channel Dissipation Pch (W) 80 -40 Tc = -25°C 25°C -30 75°C -20 -10 75°C 25°C Pulse Test 0 -2 -4 -6 -8 -10 Drain to Source Voltage VDS (V) Rev.1.00, May.13.2003, page 4 of 10 Tc = -25°C 0 -2 -4 -6 -8 -10 Gate to Source Voltage VGS (V) Pulse Test -1.6 -1.2 I D = -40 A -0.8 -20 A -0.4 -10 A Drain to Source On State Resistance RDS(on) (mΩ) 0 -2 -4 -6 Gate to Source Voltage -8 -10 80 I D = -40 A 60 -20 A V GS = -4 V -40 A -10 A -20 A 20 -10 A V GS = -10 V 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Rev.1.00, May.13.2003, page 5 of 10 Pulse Test 50 V GS = -4 V 20 -10 V 10 5 2 1 -0.1 -0.5 -1 -5 -10 -50 -100 Drain Current ID (A) (V) VGS Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 40 Static Drain to Source Sate Resistance vs. Drain Current 100 -2.0 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance RDS(on) (mΩ) HAF1009(L), HAF1009(S) 100 V DS = -10 V 50 Pulse Test Tc = -25°C 20 10 5 25°C 2 1 0.5 75°C 0.2 0.1 -0.1 -1 -10 Drain Current ID (A) -100 HAF1009(L), HAF1009(S) Body to Drain Diode Reverse recovery Time Switching Time t (µs) Reverse Recovery Time trr (ns) 500 500 200 100 50 20 di / dt = 50 A / µs V GS = 0, Ta = 25°C 10 -0.1 Switching Characteristics 1000 1000 200 tf 100 tr 50 t d(off) 20 10 5 t d(on) 2 V GS = -10 V, VDD = -30 V PW = 300 µs, duty < 1 % 1 -0.5 -1 -5 -10 Reverse Drain Current -50 -100 IDR -0.1 -0.2 -0.5 -1 (A) Reverse Drain Current vs. Source to Drain Voltage -5 -10 -20 10000 VGS = 0 f = 1 MHz (A) Pulse Test Capacitance C (pF) -40 -30 -10 V -20 VGS = 0 V 1000 -5 V -10 0 -50 -100 ID (A) Typical capacitance vs. Drain to Source Voltage -50 Reverse Drain Current IDR -2 Drain Current 100 -0.4 -0.8 -1.2 Source to Drain Voltage Rev.1.00, May.13.2003, page 6 of 10 -1.6 -2.0 VSD (V) 0 -10 -20 -30 -40 -50 -60 Drain to Source Voltage VDS (V) HAF1009(L), HAF1009(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) -12 -10 -8 VDD = -16 V -6 -4 -24V -2 0 0.0001 0.001 0.1 0.01 200 180 160 140 120 ID = -5 A 100 -0 -2 -4 -6 Gate to Source Voltage Shutdown Time of Load-Short Test Pw (S) -8 -10 VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 µ 0.2 θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 2.5°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 µ PW T PW T 1m 10 m Pulse Width PW (S) Rev.1.00, May.13.2003, page 7 of 10 D= 100 m 1 10 HAF1009(L), HAF1009(S) Package Dimensions As of January, 2003 4.44 ± 0.2 10.2 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 11.0 ± 0.5 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) Unit: mm 2.49 ± 0.2 0.4 ± 0.1 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, May.13.2003, page 8 of 10 LDPAK (L) — — 1.40 g HAF1009(L), HAF1009(S) As of January, 2003 Unit: mm (1.5) 10.0 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.7 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, May.13.2003, page 9 of 10 LDPAK (S)-(1) — — 1.30 g HAF1009(L), HAF1009(S) Sales Strategic Planning Div. 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