MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-66H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA-66H ● IC ................................................................ 1200A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM 190 171 57±0.25 6 - M8 NUTS 57±0.25 20 57±0.25 Dimensions in mm C C 40 124±0.25 140 C E E CM C E E C E G C E G CIRCUIT DIAGRAM 20.25 8 - φ 7MOUNTING HOLES 41.25 79.4 15 61.5 61.5 40 13 28 5 38 5.2 LABEL 30 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1200HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 1) trr (Note 1) Qrr (Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Unit 3300 ±20 1200 2400 1200 2400 10420 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 8.24 2.84 ~ 3.43 0.88 ~ 1.08 2.2 V V A A A A W °C °C V N·m N·m N·m kg (Tj = 25°C) Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance (Note 2) Main terminal to Base, AC for 1 minute Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Parameter Thermal resistance (Note 2) Ratings Test conditions Limits Typ — VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 1200A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 4.40 4.80 130 7 3 10 — — — — 3.30 — 300 — — 0.006 0.5 5.72 — — — — — 1.60 2.00 2.50 1.00 4.29 1.20 — 0.012 0.024 — µA VCE = 10V VGE = 0V VCC = 1650V, IC = 1200A, VGE = 15V VCC = 1650V, IC = 1200A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A die / dt = –2400A / µs IGBT part FWDi part Case to fin, conductive grease applied (Note 4) Max 15 Unit Min — mA V nF nF nF µC µs µs µs µs V µs µC °C/W °C/W °C/W IE, V EC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1200HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2400 2400 2000 VCE=10V VGE=12V VGE=11V VGE=13V VGE=14V 1600 VGE=15V VGE=20V 1200 VGE=10V 800 VGE=9V 400 0 0 1 2 3 4 5 6 VGE=8V VGE=7V 7 8 9 10 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) Tj=25°C 2000 1600 1200 800 400 0 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 VGE=15V EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 6 4 2 Tj = 25°C Tj = 125°C 0 0 500 1000 1500 2000 COLLECTOR CURRENT IC (A) 2500 104 7 5 3 2 Tj=25°C 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) Aug.1998