Production specification Silicon Bridge Rectifiers GBS4A--GBS4M FEATURES z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost construction utilizing molded Pb Lead-free plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol GBS GBS GBS GBS GBS GBS GBS 4A 4B 4D 4G 4J 4K 4M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V 50Hz sine wave, R-load Without heat sink Ta=25℃ 50Hz sine wave, R-load With heat sink Tc=50℃ IF(AV) 1.5 4.0 A Peak forward surge current 8.3ms single half-sine-wave IFSM 120 A superimposed on rated load Thermal Characteristics Characteristic Operating junction temperature range Storage temperature range Symbol Value UNITS TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ Symbol Value UNITS VF 1.05 V Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage @2.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100℃ Document Number:GBS801AA ℃ IR 5.0 500 μA www.gmicroelec.com 1 Production specification Silicon Bridge Rectifiers GBS4A--GBS4M PACKAGE OUTLINE DIMENSIONS GBS Dim Min Max A 13.65 14.15 B 9.80 10.20 C 2.95 3.25 E 0.35 0.65 F 11.70 12.30 I 0.65 0.95 J 0.90 1.20 K 3.60 4.00 P Ø3.2Typical All Dimensions in mm Document Number:GBS801AA www.gmicroelec.com 2 Production specification Silicon Bridge Rectifiers Document Number:GBS801AA GBS4A--GBS4M www.gmicroelec.com 3