BILIN GBS4M Silicon bridge rectifier Datasheet

Production specification
Silicon Bridge Rectifiers
GBS4A--GBS4M
FEATURES
z
Rating to 1000V PRV
z
Surge overload rating to 120 Amperes peak
z
Reliable low cost construction utilizing molded
Pb
Lead-free
plastic technique results in inexpensive product
z
Lead solderable per MIL-STD-202 method 208
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
Symbol
GBS
GBS
GBS
GBS
GBS
GBS
GBS
4A
4B
4D
4G
4J
4K
4M
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
50Hz sine wave, R-load Without heat sink Ta=25℃
50Hz sine wave, R-load With heat sink Tc=50℃
IF(AV)
1.5
4.0
A
Peak forward surge current
8.3ms single half-sine-wave
IFSM
120
A
superimposed on rated load
Thermal Characteristics
Characteristic
Operating junction temperature range
Storage temperature range
Symbol
Value
UNITS
TJ
- 55 ---- + 150
℃
TSTG
- 55 ---- + 150
℃
Symbol
Value
UNITS
VF
1.05
V
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage @2.0A
Maximum
reverse
current
@TA=25
at rated DC blocking voltage @TA=100℃
Document Number:GBS801AA
℃
IR
5.0
500
μA
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1
Production specification
Silicon Bridge Rectifiers
GBS4A--GBS4M
PACKAGE OUTLINE DIMENSIONS
GBS
Dim
Min
Max
A
13.65
14.15
B
9.80
10.20
C
2.95
3.25
E
0.35
0.65
F
11.70
12.30
I
0.65
0.95
J
0.90
1.20
K
3.60
4.00
P
Ø3.2Typical
All Dimensions in mm
Document Number:GBS801AA
www.gmicroelec.com
2
Production specification
Silicon Bridge Rectifiers
Document Number:GBS801AA
GBS4A--GBS4M
www.gmicroelec.com
3
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