MBR735 THRU MBR760 FEATURES TO-220AC 0.185 (4.70) 0.415 (10.54) MAX. 0.175 (4.44) 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.055 (1.39) DIA. 0.148 (3.74) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.560 (14.22) 0.530 (13.46) 0.410 (10.41) 0.390 (9.91) 0.350 (8.89) 0.635 (16.13) 0.330 (8.38) 0.625 (15.87) 1.148 (29.16) PIN 1 2 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.160 (4.06) 0.140 (3.56) 0.560 (14.22) 0.530 (13.46) ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case MECHANICAL DATA 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) Case: JEDEC TO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 5 in. - lbs. max. Weight: 0.08 ounces, 2.24 grams 0.022 (0.56) 0.014 (0.36) PIN 1 0.205 (5.20) 0.195 (4.95) PIN 2 CASE Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBR735 MBR745 MBR750 MBR760 UNITS Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts Maximum working peak reverse voltage VRWM 35 45 50 60 Volts Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current (SEE FIG 1) I(AV) 7.5 Amps Peak repetitive forward current (square wave, 20 KHZ) at TC=105°C IFRM 15.0 Amps Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps VF 0.57 0.84 0.72 0.75 0.65 - Volts 0.1 15.0 0.5 50 Maximum instantaneous forward voltage at (NOTE 2) IF=7.5A, TC=25°C IF=7.5A, TC=125°C IF=15A, TC=25°C IF=15A, TC=125°C Maximum instantaneous reverse current at rated DC blocking voltage TC=25°C TC=125°C (NOTE 1) IR Volts mA Voltage rate of change (rated VR) dv/dt 10,000 V/µs Maximum thermal resistance, (NOTE 3) RΘJC RΘJA 3.0 60.0 °C/W Operating junction temperature range TJ -65 to +150 °C TSTG -65 to +175 °C Storage temperature range NOTES: (1) 2.0µs, pulse width, f=1.0 KHZ (2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient www.kersemi.com 4/98 RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR760 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1 - FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 8 6 4 2 MBR735 - MBR745 MBR750 & MBR760 0 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 150 125 100 75 50 25 150 100 50 0 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES 10 100 10 1 NUMBER OF CYCLES AT 60 HZ CASE TEMPERATURE, °C FIG. 4 - TYPICAL REVERSE CHARACTERISTICS FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 MBR735 - MBR745 MBR750 & MBR760 50 10 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES TJ=125°C 10 PULSE WIDTH = 300µs TJ=25°C 1 MBR735 - MBR745 MBR750 & MBR760 0.1 0.01 0.1 TJ=75°C 0.01 TJ=25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TRANSIENT THERMAL IMPEDANCE, °C/W TJ=25°C f=1.0 MHz Vsig=50mVp-p 1,000 100 MBR735 - MBR745 MBR750 & MBR760 1 10 REVERSE VOLTAGE, VOLTS 60 80 100 FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 - TYPICAL JUNCTION CAPACITANCE 40 0.1 40 20 PERCENT OF RATED PEAK REVERSE VOLTAGE, % 4,000 JUNCTION CAPACITANCE, pF TJ=125°C 1 100 100 10 1 0.1 0.01 0.1 10 1 100 t, PULSE DURATION, sec. www.kersemi.com