PRELIMINARY SFF1310M SFF1310Z SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 40 AMPS 200 VOLTS 0.050 S N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with polysilicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV, and Space Level screening available • Replaces: SMM40N20 Type TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage VDS 200 Volts Gate to Source Voltage VGS ±20 Volts ID 40 Amps Top & Tstg -55 to +150 R 2JC 0.5 o PD 250 190 Watts Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25oC @ TC = 55oC PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0004A o C C/W PRELIMINARY SFF1310M SFF1310Z SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING SYMBOL MIN TYP MAX UNIT BVDSS 200 - - V RDS(on) - - 0.050 S ID(on) 50 - - A VGS(th) 2.0 - 4.0 V g fs 20 25 - S(É) I DSS - - 250 1000 :A At rated VGS IGSS - - +100 -100 nA VGS = 10 V 50% rated VDS 50% rated ID VDD =50% rated VDS 50% rated ID RG = 6.2 S Qg Qgs Qgd td (on) tr td (off) tf - 190 35 95 28 38 110 30 220 50 120 35 40 130 35 VSD - - 1.50 V Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ID = 37.5A ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID = 4mA) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID) Zero Gate Voltage Drain Current VDS = max rated Voltage, TA = 25oC (VGS = 0V) VDS = 80% rated VDS, TA = 125oC Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) nC nsec Diode Reverse Recovery Time Reverse Recovery Charge TJ =25oC IF = 10A di/dt = 100A/:sec trr QRR - 1.5 225 - nsec :C Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 Volts VDS =25 Volts f =1 MHz Ciss Coss Crss - 4400 800 285 - pF NOTES: