isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF540 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ MAX UNIT Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF540 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX 100 2 UNIT V 4 V VGS= 10V; ID= 17A 0.077 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS=0 250 uA VSD Forward On-Voltage IS= 27A; VGS=0 2.5 V Ciss Input Capacitance 1600 pF Coss Output Capacitance 800 pF Crss Reverse Transfer Capacitance 300 pF TYP MAX UNIT 15 23 ns 70 110 ns 40 60 ns 50 75 ns VDS=25V,VGS=0V, F=1.0MHz ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL Td(on) Tr Td(off) Tf PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time VDD=50V,ID=28A VGS=10V,RGEN=9.1Ω RGS=9.1Ω Fall Time isc website：www.iscsemi.cn PDF pdfFactory Pro CONDITIONS 2 MIN isc & iscsemi is registered trademark www.fineprint.cn