NUD3105D Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features • Provides a Robust Driver Interface Between D.C. Relay Coil and • • • • • • Sensitive Logic Circuits Optimized to Switch Relays from 3.0 V to 5.0 V Rail Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(on) Reduces System Current Drain Pb−Free Package is Available Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, • • Cassette Recorders Industrial: Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers Gate (2) Relay, Inductive Load Driver 0.5 Amp, 8.0 V Clamp MARKING DIAGRAM 6 JW4 D G G 1 SC−74 CASE 318F STYLE 7 JW4 D G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD3105DMT1 NUD3105DMT1G Package Shipping† SC−74 3000/Tape & Reel SC−74 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (6) http://onsemi.com Drain (3) 1.0 k Gate (5) 1.0 k 300 k 300 k Source (1) Source (4) CASE 318F © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 5 1 Publication Order Number: NUD3105D/D NUD3105D MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit VDSS Drain to Source Voltage − Continuous 6.0 Vdc VGS Gate to Source Voltage – Continuous 6.0 Vdc ID Drain Current – Continuous 500 mA Ez Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) 50 mJ TJ Junction Temperature 150 °C TA Operating Ambient Temperature −40 to 85 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation (Note 1) Derating Above 25°C 380 1.5 mW mW/°C Thermal Resistance Junction−to−Ambient 329 °C/W RqJA Rating Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 6.0 8.0 9.0 V OFF CHARACTERISTICS VBRDSS Drain to Source Sustaining Voltage (Internally Clamped) (ID = 10 mA) BVGSO Ig = 1.0 mA − − 8.0 V IDSS Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) − − − − 15 15 mA IGSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 5.0 − − − 35 65 mA 0.8 0.8 1.2 − 1.4 1.4 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) RDS(on) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ = 85°C) (ID = 500 mA, VGS = 5.0 V, TJ = 85°C) − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W IDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) 300 200 400 − − − mA 350 570 − mMhos gFS Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) http://onsemi.com 2 NUD3105D TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit DYNAMIC CHARACTERISTICS Ciss Input Capacitance (VDS = 5.0 V,VGS = 0 V, f = 10 kHz) − 25 − pF Coss Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − 37 − pF Crss Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − 8.0 − pF Min Typ Max Units SWITCHING CHARACTERISTICS Symbol Characteristic tPHL tPLH Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V) Low to High Propagation Delay; Figure 1 (5.0 V) − − 25 80 − − nS tPHL tPLH High to Low Propagation Delay; Figure 1 (3.0 V) Low to High Propagation Delay; Figure 1 (3.0 V) − − 44 44 − − tf tr Transition Times: Fall Time; Figure 1 (5.0 V) Rise Time; Figure 1 (5.0 V) − − 23 32 − − nS tf tr Fall Time; Figure 1 (3.0 V) Rise Time; Figure 1 (3.0 V) − − 53 30 − − VCC Vin 50% GND tPLH Vout tPHL VZ VCC 90% 50% 10% GND tr tf Figure 1. Switching Waveforms http://onsemi.com 3 − NUD3105D TYPICAL CHARACTERISTICS 10 TJ = 25°C VGS = 5.0 V 1.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 VGS = 3.0 V 0.1 VGS = 2.0 V 0.01 0.001 0.01 50°C 0.0001 −40°C VGS = 1.0 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.000001 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Output Characteristics Figure 3. Transfer Function 5.0 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 0.5 A VGS = 3.0 V 1000 ID = 0.25 A VGS = 3.0 V 800 600 400 ID = 0.5 A VGS = 5.0 V 200 0 −50 −25 0 25 50 75 100 125 45 −40°C ID = 250 mA 40 35 125°C 30 85°C 25 50°C 20 25°C 15 0.8 1.0 1.2 1.4 1.8 1.6 TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with Gate−To−Source Voltage IZ = 10 mA VZ, ZENER CLAMP VOLTAGE (V) 8.18 8.16 8.14 8.12 8.10 8.08 8.06 8.04 8.02 8.00 −50 2.0 13.0 8.20 VZ, ZENER VOLTAGE (V) 85°C 0.001 0.00001 1200 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0.1 25°C 0.0001 0.00001 VDS = 0.8 V 1.0 −25 0 25 50 75 100 125 VGS = 0 V 12.0 −40°C 11.0 25°C 10.0 9.0 8.0 7.0 85°C 6.0 0.1 1.0 10 100 1000 TEMPERATURE (°C) IZ, ZENER CURRENT (mA) Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener Current http://onsemi.com 4 NUD3105D TYPICAL CHARACTERISTICS 1.2 40 35 125°C IGSS, GATE LEAKAGE (mA) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) 1.1 1.0 0.9 85°C 0.8 50°C 0.7 25°C 0.6 −40°C 0.5 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 30 25 VGS = 5.0 V 20 15 VGS = 3.0 V 10 5 0 −50 0 −25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 75 100 125 TEMPERATURE (°C) Figure 8. On−Resistance vs. Drain Current and Temperature 1.0 25 VGS = 3.0 V, TC = 25°C Figure 9. Gate Leakage vs. Temperature ID−Continuous = 0.5 A RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT DC PW = 0.1 s DC = 50% 0.1 PW = 10 ms DC = 20% PW = 7.0 ms DC = 5% Typical IZ vs. VZ V(BR)DSS min = 6.0 V 0.01 0.01 0.1 1.0 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 Figure 10. Safe Operating Area for NUD3105DLT1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW SINGLE PULSE 0.1 t1 t2 PERIOD DUTY CYCLE = t1/t2 1.0 10 100 1000 10,000 t1, PULSE WIDTH (ms) Figure 11. Transient Thermal Response for NUD3105DLT1 http://onsemi.com 5 100,000 1,000,000 NUD3105D Designing with this Data Sheet 4. Verify that the circuit driving the gate will meet the VGS(th) from the Electrical Characteristics table. 5. Using the max output current calculated in step 1, check Figure 7 to insure that the range of Zener clamp voltage over temperature will satisfy all system & EMI requirements. 6. Use IGSS and IDSS from the Electrical Characteristics table to insure that “OFF” state leakage over temperature and voltage extremes does not violate any system requirements. 7. Review circuit operation and insure none of the device max ratings are being exceeded. 1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the NUD3105D will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 11 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 and 11 with the SOA notes to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. APPLICATIONS DIAGRAMS +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + Vout (6) Vout (3) NUD3105DDMT1 Vin (2) Vin (5) GND (1) GND (4) Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V Level Translating Interface http://onsemi.com 6 NUD3105D Max Continuous Current Calculation for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C Assuming ±10% Make Tolerance, R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C − TC for Annealed Copper Wire is 0.4%/°C − AROMAT JS1E−5V R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc AROMAT JS1E−5V + + + + +4.5 TO +5.5 Vdc + AROMAT JS1E−5V AROMAT TX2−5V AROMAT JS1E−5V − − − Vout (3) Vout (3) NUD3105LT1 NUD3105LT1 Vin (1) Vin (1) GND (2) GND (2) Figure 13. A 140 mW, 5.0 V Relay with TTL Interface Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank http://onsemi.com 7 NUD3105D PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. D 6 HE 1 5 4 2 3 E DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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