NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features -600mA ADVANCE INFORMATION 1.0 @ VGS = -4.5V 1.5 @ VGS = -2.5V -20V 2.0 @ VGS = -1.8V ID TA = +25°C Package RDS(ON) MAX -500mA X1-DFN1212-3 -400mA -250mA 3.0 @ VGS = -1.5V Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications DC-DC Converters Power Management Functions Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V Max Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X1-DFN1212-3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe. Solderable per MILSTD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate) Drain Gate Gate Protection Diode Top View ESD PROTECTED Bottom View Source Equivalent Circuit Pin-Out Top View Ordering Information (Note 4) Part Number DMP21D5UFD-7 Notes: Case X1-DFN1212-3 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information KP2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) KP2 YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP21D5UFD Document number: DS35931 Rev. 5 - 3 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State Continuous Drain Current (Note 6) VGS = -1.8V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -20 ±8 -600 -500 ID mA -400 -300 -2 -800 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current Unit V V IDM IS mA A mA Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Steady State Steady State Symbol PD RJA PD RJA TJ, TSTG Value 0.4 280 0.8 140 -55 to +150 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -20 — V Zero Gate Voltage Drain Current TJ = +25°C IDSS — — Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS — — — -80 -100 ±10.0 VGS(TH) Static Drain-Source On-Resistance RDS(ON) -0.5 — — — — — — — — 0.7 0.9 1.2 1.5 5 0.7 -0.75 -1.0 1.0 1.5 2.0 3.0 — — -1.2 — — — — — — — — — — — 46.1 7.2 4.9 0.5 0.8 0.1 0.1 8.5 4.3 20.2 19.2 — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VGS = -4.5V Total Gate Charge VGS = -8V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Unit W °C/W W °C/W °C |Yfs| VSD Ciss Coss Crss Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF nA µA V s V Test Condition VGS = 0V, ID = -1mA VDS = -4.5V, VGS = 0V VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -80mA VGS = -1.8V, ID = -40mA VGS = -1.5V, ID = -30mA VGS = -1.2V, ID = -1mA VDS = -3V, ID = -100mA VGS = 0V, IS = -330mA pF VDS = -10V, VGS = 0V, f = 1.0MHz nC VDS = -10V, ID = -250mA ns VDD = -3V, VGS = -2.5V, RL = 300Ω, Rg = 25Ω, ID = -100mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP21D5UFD Document number: DS35931 Rev. 5 - 3 2 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD 1.0 1.0 0.8 0.8 DMP21D5UFD -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0.6 0.4 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.4 0 5 2.0 ) (E C N A T S IS E R -N O E C R U O S -N I A R D , )N 1.6 1.4 VGS = -1.8V 1.2 1.0 VGS = -2.5V 0.8 0.6 VGS = -4.5V 0.4 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 150°C 1.0 TA = 125°C 0.8 0.6 0.4 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMP21D5UFD Document number: DS35931 Rev. 5 - 3 TA = 85°C TA = 25°C TA = -55°C 0.2 0 0 1.0 1.7 3.0 1.2 R 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 1.4 O (S D 0.2 0 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.8 0 TA = -55 C 0.6 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0 TA = 85C TA = 125C TA = 25 C 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION TA = 150 C VDS = -5V 0.2 0.4 0.6 0.8 -ID , DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance vs.Temperature 150 December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD V - 1.0 1.2 0.8 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) t( S G 1.0 ID = -1mA 0.8 ID = -250µA 0.6 0.4 0.6 TA= 25C 0.4 0.2 0.2 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 100 10 C oss Crss TA = 150C 100 TA = 125C TA = 85C 10 TA = 25C f = 1MHz 1 0 1 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 1 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 8 P = 100祍 PW W =100s RDS(ON) Limited -VGS, GATE-SOURCE VOLTAGE (V) 7 DC -ID, DRAIN CURRENT (A) ADVANCE INFORMATION 1.4 )V ( E G A T L O V D L O H S E R H T E T A G , )h DMP21D5UFD PW = 10s 0.1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 T J(MAX) = 150C T A = 25C Single Pulse 0.001 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMP21D5UFD Document number: DS35931 Rev. 5 - 3 100 4 of 6 www.diodes.com 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg , TOTAL GATE CHARGE (nC) Fig. 12 Gate-Charge Characteristics December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1212-3 ADVANCE INFORMATION A A1 A3 Seating Plane D e b1(2x) E X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm L(3x) b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1212-3 X Y Dimensions C X X1 Y Y1 Y2 X1 (2x) Y2 Y1 (2x) Value (in mm) 0.80 0.42 0.32 0.50 0.50 1.50 C DMP21D5UFD Document number: DS35931 Rev. 5 - 3 5 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP21D5UFD Document number: DS35931 Rev. 5 - 3 6 of 6 www.diodes.com December 2017 © Diodes Incorporated