Maxim MAX3355E /-15kv esd-protected usb on-the-go charge pump and comparators in ucsp Datasheet

19-2844; Rev 1; 8/03
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
Features
♦ Guaranteed 8mA (min) VBUS Charge-Pump Output
♦ ±15kV ESD Protection on VBUS and ID_IN
♦ Up to +6.0V Backdrive Capability for VBUS
♦ +2.6V to +5.5V Operating Voltage Range
♦ VL Operates Down to +1.65V
♦ Guaranteed VBUS Input Impedance When Not
Driven
♦ Automatic CLOAD Detection
♦ Comparators for Host Negotiation Protocol
♦ ID_IN Detection
♦ Available in 4 x 3 UCSP or 14-Pin TSSOP Package
Ordering Information
TEMP RANGE
PINPACKAGE
TOP
MARK
MAX3355EEBC-T
-40°C to +85°C
4 x 3 UCSP
ABE
MAX3355EEUD
-40°C to +85°C
14 TSSOP
—
PART
Applications
Cell Phones
PDAs
Pin Configurations appear at end of data sheet.
MP3 Players
Digital Cameras
Functional Diagram
VCC C+ CVCC
LOGIC SUPPLY
+1.65V TO VCC
VL
CURRENT
SOURCE
MAX3355E
ESD
SHDN
STATUS1
STATUS2
DUAL-ROLE
ASIC
CHARGE
PUMP
VBUS
5V AT 8mA
LEVEL
SHIFTER
40kΩ TO
100kΩ
STATUS1
STATUS2
VBUS
COMPARATORS
GND
ID_IN
ID_OUT
ESD
USB
XCVR
VBUS
USB CONNECTOR
ON/OFF
OFFVBUS
GND
ID
D+
D-
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX3355E
General Description
The MAX3355E integrates a charge pump and comparators to enable a system with an integrated USB onthe-go (OTG) dual-role transceiver to function as a USB
OTG dual-role device. USB OTG facilitates the direct
connection of peripherals and mobile devices such as
PDAs, cellular phones, MP3 players, and digital cameras to one another without a host PC.
The MAX3355E’s internal charge pump supplies VBUS
power and signaling that is required by the transceiver as
defined in On-the-Go Supplement to the USB 2.0
Specification, Revision 1.0. The MAX3355E features ID
detection and internal comparators for monitoring
VBUS. The VBUS status outputs are used during negotiation for the USB according to the session request protocol (SRP) and host negotiation protocol (HNP).
The MAX3355E operates with logic supply voltages
(VL) as low as 1.65V, ensuring compatibility with lowvoltage ASICs. The device also features a logic-selectable 1µA shutdown mode.
The MAX3355E has built-in ±15kV ESD-protection circuitry to protect the VBUS and ID_IN pins. The device is
available in a miniature 4 x 3 chip-scale package
(UCSP), as well as a 14-pin TSSOP package, and is
specified for operation over the -40°C to +85°C extended
temperature range.
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND)
VCC, VL, VBUS, ID_IN.............................................-0.3V to +6.0V
C+..................................................................(VCC - 0.3V) to +6V
C-................................................................-0.3V to (VCC + 0.3V)
OFFVBUS, SHDN, STATUS1,
STATUS2, ID_OUT ....................................-0.3V to (VL + 0.3V)
VBUS Short Circuit to GND .........................................Continuous
Output Current (all other pins)..........................................±15mA
Continuous Power Dissipation (TA = +70°C)
4 x 3 UCSP (derate 6.5mW/°C above +70°C) .............520mW
14-Pin TSSOP (derate 9.1mW/°C above +70°C) .........727mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Bump Temperature (soldering)
Infrared (15s) ...............................................................+200°C
Vapor Phase (20s) .......................................................+215°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF
capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA =
+25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VCC
2.6
5.5
V
Logic Supply Voltage
VL
1.65
VCC
V
Logic Supply Current
IL
Operating Supply Current
Shutdown Supply Current
ICC
ICCSHDN
100
µA
No activity on VBUS; comparator and
reference active
200
µA
Device A configured, OFFVBUS = VL,
ILOAD = 8mA, charge pump on
20
mA
Device B configured, SHDN = GND
1
Device A configured, SHDN = GND
30
µA
Thermal-Shutdown Protection
Threshold
Device A configured, OFFVBUS = VL,
charge pump on
+150
°C
Thermal-Shutdown Protection
Hysteresis
Device A configured, OFFVBUS = VL,
charge pump on
+20
°C
LOGIC INPUTS AND OUTPUTS
STATUS1, STATUS2, ID_OUT
Output Voltage
OFFVBUS, SHDN Input Voltage
Input Leakage Current
VOH
ISOURCE = +1mA
VOL
ISINK = -1mA
VIH
2/3 x VL
0.4
2/3 x VL
0.4
VIL
ILKG
OFFVBUS, SHDN = GND or VL
±1
V
V
µA
VBUS OUTPUT VOLTAGE: DEVICE A CONFIGURED
VBUS Output Voltage
ILOAD = 0 to 8mA, CLOAD = 1µF,
OFFVBUS = VL, ID_IN = GND
No load, CLOAD = 1µF, OFFVBUS = VL,
ID_IN = GND
4.63
5.25
V
4.8
VBUS Leakage Voltage
OFFVBUS = GND
200
mV
VBUS Sink Current
OFFVBUS = GND, VBUS = +6.0V
150
µA
2
_______________________________________________________________________________________
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
(VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF
capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA =
+25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
VBUS Source Current
OFFVBUS = VL, ID_IN = GND
VBUS Short-Circuit Current Limit
VBUS shorted to GND
VBUS Output Ripple
ILOAD = 8mA, CLOAD = 1µF,
OFFVBUS = VL, ID_IN = GND (Note 3)
MIN
RINVBUS
MAX
8
OFFVBUS = GND or SHDN = GND
40
CLOAD = 20µF, OFFVBUS = VL, ID_IN =
VCC, IBUS source on-time = tVBUSCHRG
2.1
UNITS
mA
200
Charge-Pump Switching
Frequency
VBUS Input Impedance
TYP
mA
100
mV
500
kHz
100
kΩ
LOAD DETECTION VBUS OUTPUT VOLTAGE
VBUS Output Voltage
V
CLOAD = 95µF, OFFVBUS = VL, ID_IN =
VCC, IBUS source on-time = tVBUSCHRG
VBUS Source Current
OFFVBUS = VL, ID_IN = VCC (Note 4)
VBUS Current Gate Time
OFFVBUS = VL, ID_IN = VCC, Device B
(Note 4)
tVBUSCHRG
1.9
450
600
850
µA
155
(max)
105
56
(min)
ms
4.4
4.55
4.63
VBUS COMPARATOR
VBUS Valid Comparator Threshold
VTHVBUSVLD
VBUS rising
VBUS Valid Comparator Hysteresis
Session Valid Comparator
Threshold
20
VTHSESVLD
1.12
Session Valid Comparator
Hysteresis
B-Session End Comparator
Threshold
1.68
15
VTHSESEND
0.4
B-Session End Comparator
Hysteresis
Shutdown Comparator
1.4
0.5
0.8
V
mV
0.6
30
VTH,SHDN
V
mV
V
mV
2.4
V
ID_IN
ID_IN Voltage Input for Device B
2/3 x Vcc
V
ID_IN Voltage Input for Device A
ID_IN Input Impedance
150
200
0.4
V
250
kΩ
ESD PROTECTION (ID_IN, VBUS)
Human Body Model
±15
kV
IFC 1000-4-2 Air-Gap Discharge
±15
kV
IFC 1000-4-2 Contact Discharge
±8
kV
_______________________________________________________________________________________
3
MAX3355E
ELECTRICAL CHARACTERISTICS (continued)
TIMING CHARACTERISTICS
(VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF
capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA =
+25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
SYMBOL
VBUS Rise Time
CONDITIONS
MIN
TYP
0 to 4.4V, CLOAD = 1µF, ILOAD = 8mA
MAX
UNITS
100
ms
OFFVBUS Propagation Delay
6
µs
Comparator Propagation Delay
3
µs
Time to Exit Shutdown
50
µs
Time to Shutdown
1
µs
ID_OUT Rise Time
CID_OUT = 50pF
10
ns
ID_OUT Fall Time
CID_OUT = 50pF
10
ns
Note 1: Limits are 100% production tested at +25°C. Limits over temperature are guaranteed by design.
Note 2: All currents out of the device are positive; all currents into the device are negative. All voltages are referenced to device
ground unless otherwise specified.
Note 3: The ripple voltage is strongly correlated to the bus capacitance and its ESR.
Note 4: The VBUS current source and current gate time vary together with process and temperature such that the resulting VBUS
pulse is guaranteed to drive a <13µF load to a voltage >2.0V, and to drive a >96µF load to a voltage <2.2V.
Typical Operating Characteristics
(VCC, VL = +3.3V, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF
min, ESRLOAD = 1Ω max, TA = +25°C, unless otherwise noted.)
60
40
4.75
VCC = 5.5V
4.50
VCC = 2.6V
4.25
20
0
0
10
20
30
40
VBUS OUTPUT CURRENT (mA)
4
VCC = 4.0V
50
150
IVBUS = 8mA
VBUS OUTPUT RIPPLE VOLTAGE (mV)
80
5.00
MAX3355E toc02
VBUS OUTPUT VOLTAGE (V)
VCC = 2.6V
VCC = 4.0V
VCC = 5.5V
100
5.25
MAX3355E toc01
120
VBUS OUTPUT RIPPLE VOLTAGE
vs. VCC INPUT VOLTAGE
VBUS OUTPUT VOLTAGE
vs. VBUS OUTPUT CURRENT
MAX3355E toc03
VCC INPUT CURRENT
vs. VBUS OUTPUT CURRENT
VCC INPUT CURRENT (mA)
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
125
100
75
50
25
0
4.00
0
10
20
30
40
VBUS OUTPUT CURRENT (mA)
50
2.5
3.0
3.5
4.0
4.5
VCC INPUT VOLTAGE (V)
_______________________________________________________________________________________
5.0
5.5
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
VBUS INPUT IMPEDANCE
vs. TEMPERATURE
VBUS OUTPUT VOLTAGE
vs. VCC INPUT VOLTAGE
IVBUS = 0mA
5.0
4.8
4.6
IVBUS = 8mA
4.4
MAX3355E toc05
VBUS INPUT IMPEDANCE (kΩ)
5.2
VBUS OUTPUT VOLTAGE (V)
70
MAX3355E toc04
5.4
69
68
67
66
4.2
65
4.0
2.5
3.0
3.5
4.0
4.5
5.0
-40
5.5
10
35
60
85
VBUS vs. CAPACITANCE LOAD
DURING LOAD DETECTION
SUPPLY CURRENT
vs. TEMPERATURE
MAX3355E toc07
MAX3355E toc06
20
IVBUS = 8mA
SUPPLY CURRENT (mA)
-15
TEMPERATURE (°C)
VCC INPUT VOLTAGE (V)
CVBUS = 10µF
1V/div
19
VCC = 2.6V
18
VCC = 4.0V
0
CVBUS = 96µF
1V/div
17
0
VCC = 5.5V
16
-40
-15
10
35
60
85
40ms/div
TEMPERATURE (°C)
_______________________________________________________________________________________
5
MAX3355E
Typical Operating Characteristics (continued)
(VCC, VL = +3.3V, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF capacitor to GND, CLOAD = 1µF
min, ESRLOAD = 1Ω max, TA = +25°C, unless otherwise noted.)
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
MAX3355E
Pin Description
PIN
UCSP
TSSOP
NAME
FUNCTION
A1
2
VCC
A2
3
ID_OUT
Power Supply. +2.6V to +5.5V input supply. Bypass VCC to GND with a 1µF capacitor.
A3
5
STATUS1
Status Output 1. Provides output voltage detection for use during HNP handshaking (Tables 1
and 2).
A4
6
STATUS2
Status Output 2. Provides output voltage detection for use during HNP handshaking (Tables 1
and 2).
B1
1
VBUS
USB Supply. VBUS provides a nominal +5.0V output when ID_IN is low and OFFVBUS is high.
VBUS is lower than +2.1V when ID_IN is open or a load greater than 96.5µF is sensed. VBUS can
be backdriven to +6.0V without any consequence. Bypass VBUS to GND with a 1µF capacitor.
B2
4
OFFVBUS
B3
11
SHDN
Shutdown. Connect SHDN to GND to enter shutdown and reduce supply current to less than
1µA. Connect SHDN to VL for normal operation.
B4
9
VL
Logic Supply. VL sets the logic output high voltage and logic input high threshold. VL must be
between +1.65V and VCC.
C1
14
C+
Charge-Pump Positive Connection
C2
13
C-
Charge-Pump Negative Connection
C3
12
GND
Ground
C4
10
ID_IN
Device ID. ID_IN is internally pulled up to VCC. Leave ID_IN open for device B and connect
ID_IN to GND for device A.
—
7, 8
N.C.
No Connection
Device ID Output. Output of ID_IN level translated to VL.
VBUS Off. Turns the internal charge pump providing VBUS on and off.
Typical Application Circuit
VCC
C+
VCC
1µF
VL
C1
0.1µF
C-
VL
0.1µF
MAX3355E
OFFVBUS
VBUS
ID_OUT
CLOAD
1µF
STATUS1
STATUS2
µP
SHDN
OTG SIE
6
ID_IN
GND
USB OTG
CONNECTOR
D+
D-
_______________________________________________________________________________________
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
USB OTG is an emerging USB standard that enables
devices to talk in a peer-to-peer manner on a USB bus.
OTG allows peripherals and mobile devices such as
PDAs, cellular phones, and digital cameras to be
attached directly to one another without requiring a
PC host.
The MAX3355E integrates a charge pump and comparators to enable a system with an integrated USB OTG
dual-role transceiver to function as a USB OTG dual-role
device. The MAX3355E’s internal charge pump supplies
V BUS power and signaling as defined in On-the-Go
Supplement: USB 2.0, Revision 1.0. The MAX3355E’s
internal level-detection comparators monitor important
VBUS voltages needed to support SRP and HNP.
Charge Pump
The MAX3355E provides power for the VBUS line using
an internal charge pump. The charge pump provides
an OTG-compliant output on VBUS while sourcing 8mA
load current. The charge pump can be powered from
voltages between +2.6V and +5.5V. A 0.1µF flying
capacitor, connected between C+ and C-, and a 1µF
(min) decoupling reservoir capacitor on V BUS are
required for proper operation.
The charge pump is active if OFFVBUS is connected to
VL and the MAX3355E is configured as device A (ID_IN
connected to GND). To minimize VBUS ripple, select a
reservoir capacitor value between 1µF and 6.8µF. The
charge-pump output is protected from short-circuit conditions on VBUS by an internal current clamp that limits
the VBUS current to 200mA.
Current Generator
Table 1. Status Bit Significance
STATUS1
STATUS2
SIGNIFICANCE
0
0
VBUS < VTHSESEND
1
0
VTHSESEND < VBUS < VTHSESVLD
0
1
VTHSESVLD < VBUS < VTHVBUSVLD
1
1
VBUS > VTHVBUSVLD
STATUS2
SIGNIFICANCE
0
1
VBUS < VTH,SHDN
0
0
VBUS > VTH,SHDN
Device ID
Table 3. Device ID
ID_IN
Comparators
The MAX3355E contains internal comparators for monitoring the VBUS voltage. The status of VBUS is summarized in two status outputs: STATUS1 and STATUS2.
The status outputs can be used to negotiate for the
USB OTG bus. The VBUS status is conveyed according
to Table 1. While in shutdown mode, the STATUS2 output can be used to indicate VBUS voltage (Table 2).
Table 2. Status Bit Shutdown
Functionality (SHDN = GND)
STATUS1
An internal current generator injects up to 600µA of current onto the VBUS line. The current generator is stable
over the supply voltage variation. The current generator
is connected to VBUS when OFFVBUS and SHDN are 1
and ID_IN is open. It remains connected for tVBUSCHRG
or until the VBUS line voltage exceeds the lower of VCC
and 4.82V.
ID_OUT
CONFIGURATION
0
0
Device A
Open
VL
Device B
Configure the MAX3355E as device A by connecting
ID_IN to GND and as device B by leaving ID_IN open
(Table 3). ID_IN is level translated to VL and provided
as an output at ID_OUT. VL sets the logic output high
level. ID_IN is internally pulled up to VCC.
Table 4. Function Select
SHDN
OFFVBUS
ID_IN
VBUS
CHARGE PUMP
COMPARATORS
0
X
X
RINVBUS
Inactive
Inactive
1
0
X
RINVBUS
Inactive
Active
1
1
0
5V
Active
Active
1
1
1
RINVBUS (Note 5)
Inactive
Active
Note: The 600µA current source is supplied for tVBUSCHRG (see the Current Generator section).
_______________________________________________________________________________________
7
MAX3355E
Detailed Description
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
RC
1MΩ
CHARGE-CURRENTLIMIT RESISTOR
HIGHVOLTAGE
DC
SOURCE
Cs
100pF
RD
1.5kΩ
RC
50Ω to 100Ω
DISCHARGE
RESISTANCE
CHARGE-CURRENTLIMIT RESISTOR
DEVICE
UNDER
TEST
STORAGE
CAPACITOR
Ir
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
AMPERES
36.8%
10%
0
0
tRL
TIME
tDL
CURRENT WAVEFORM
Figure 2. Human Body Current Waveform
OFFVBUS
Connect OFFVBUS to GND to disable VBUS and the
charge pump (Table 4). For normal VBUS operation,
connect OFFVBUS to VL. When OFFVBUS = GND, VBUS
impedance is between 40kΩ to 100kΩ as defined in Onthe-Go Supplement: USB 2.0, Revision 1.0.
SHDN
The MAX3355E shutdown mode reduces supply current
to less than 1µA. To enter shutdown mode, connect
SHDN to GND. Shutdown mode disables the charge
pump and comparators (Table 4). While in shutdown
mode, the STATUS1 output defaults to logic 0 and STATUS2 indicates VBUS. During shutdown, if VBUS is externally driven above VTH,SHDN (defined in the Comparators
section), the MAX3355E sinks current from VCC.
Applications Information
±15kV ESD Protection
To protect the MAX3355E against ESD, ID_IN and VBUS
8
Cs
150pF
DISCHARGE
RESISTANCE
STORAGE
CAPACITOR
DEVICE
UNDER
TEST
Figure 3. IEC 1000-4-2 ESD Test Model
Figure 1. Human Body ESD Test Model
IP 100%
90%
HIGHVOLTAGE
DC
SOURCE
RD
330Ω
have extra protection against static electricity to protect
the device up to ±15kV. For ±15kV protection on VBUS,
a 1µF capacitor must be connected from VBUS to GND
as close to the device as possible. The ESD structures
withstand high ESD in all states—normal operation,
shutdown, and powered down. ESD protection can be
tested in various ways. The ID_IN input and VBUS are
characterized for protection to the following limits:
1) ±15kV using the Human Body Model
2) ±8kV using the IEC 1000-4-2 Contact Discharge
method
3) ±15kV using the IEC 1000-4-2 Air-Gap Discharge
method
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents
test setup, test methodology, and test results.
Human Body Model
Figure 1 shows the Human Body Model and Figure 2
shows the current waveform it generates when discharged into a low impedance. This model consists of a
100pF capacitor charged to the ESD voltage of interest,
which is then discharged into the test device through a
1.5kΩ resistor.
IEC 1000-4-2
The IEC 1000-4-2 standard covers ESD testing and
performance of finished equipment. It does not specifically refer to integrated circuits. The MAX3355E helps
the user design equipment that meets Level 4 of IEC
1000-4-2, without the need for additional ESD-protection components. The major difference between tests
done using the Human Body Model and IEC 1000-4-2
is a higher peak current in IEC 1000-4-2. This occurs
because series resistance is lower in the IEC 1000-4-2
model. Hence, the ESD withstand voltage measured to
_______________________________________________________________________________________
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
Machine Model
The Machine Model for ESD tests all pins using a
200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by
contact that occurs with handling and assembly during
manufacturing. All pins require this protection during
manufacturing. After PC board assembly, the Machine
Model is less relevant to I/O ports.
Layout Considerations
The MAX3355E charge-pump switching frequency
makes proper layout important to ensure stability and
maintain the output voltage under all loads. For best
performance, minimize the distance between the
capacitors and the MAX3355E.
UCSP Applications Information
For the latest application details on UCSP construction, dimensions, tape-carrier information, printed circuit board techniques, bump-pad layout, and
recommended reflow temperature profile, as well as
the latest information on reliability testing results, refer
to Maxim Application Note: UCSP–A Wafer-Level
Chip-Scale Package available on Maxim’s web site at
www.maxim-ic.com/ucsp.
Pin Configurations
TOP VIEW
TOP VIEW
VBUS 1
14 C+
VCC
2
13 C-
ID_OUT
3
12 GND
OFFVBUS 4
MAX3355E
10 ID_IN
STATUS2 6
9
VL
N.C. 7
8
N.C.
TSSOP
2
3
4
MAX3355E
VCC
ID_OUT STATUS1 STATUS2
A
11 SHDN
STATUS1 5
1
VBUS
OFFVBUS
SHDN
VL
C+
C-
GND
ID_IN
B
C
UCSP
Chip Information
TRANSISTOR COUNT: 1601
PROCESS: BiCMOS
_______________________________________________________________________________________
9
MAX3355E
IEC 1000-4-2 is generally lower than that measured
using the Human Body Model. Figure 3 shows the IEC
1000-4-2 model. The Air-Gap Discharge test involves
approaching the device with a charged probe. The
contact-discharge method connects the probe to the
device before the probe is energized.
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages.)
12L, UCSP 4x3.EPS
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
PACKAGE OUTLINE, 4x3 UCSP
21-0104
MAX3355E Package Code: B12-1
10
______________________________________________________________________________________
F
1
1
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
TSSOP4.40mm.EPS
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11
© 2003 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
MAX3355E
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages.)
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