BAR64V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for this PIN Diodes are switches and attenuators in wireless, mobile and TVsystems. 2 3 1 1 2 3 18256 Features Mechanical Data • High reverse Voltage • Small reverse capacitance • High breakdown voltage Case: Plastic case (SOT-23) Weight: approx. 8.1 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Applications For frequency up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile , wireless and TV-Applications Parts Table Part BAR64V-04 Ordering code Marking BAR64V-04-GS18 or BAR64V-04-GS08 Remarks D4 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 100 V Forward current IF 100 mA Junction temperature Storage temperature range Unit Tj 150 °C Tstg - 55 to + 150 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Test condition IR = 10 µA Symbol Min VR 100 Typ. Max Unit V Reverse current VR = 50 V IR 50 nA Forward voltage IF = 50 mA VF 1.1 V Document Number 85694 Rev. 1.2, 26-Apr-04 www.vishay.com 1 BAR64V-04 VISHAY Vishay Semiconductors Parameter Test condition Diode capacitance Forward resistance Charge carrier life time Symbol Min Typ. Max Unit f = 1 MHz, VR = 0 CD 0.5 f = 1 MHz, VR = 1 V CD 0.37 0.5 pF pF f = 1 MHz, VR = 20 V CD 0.23 0.35 pF f = 100 MHz, IF = 1 mA rf 10 20 Ω f = 100 MHz, IF = 10 mA rf 2.0 3.8 Ω f = 100 MHz, IF = 100 mA rf 0.8 1.35 Ω IF = 10 mA, IR = 6 mA, iR = 3 mA trr 1.8 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100.00 I F - Forward Current ( mA ) rf - Forward Resistance ( Ω ) 100.0 f = 100 MHz 10.0 1.0 0.1 0.1 1.0 10 1.00 0.10 0.01 0.5 100 IF - Forward Current ( mA ) 18342 10.00 Fig. 1 Forward Resistance vs. Forward Current 0.8 0.9 1.0 300 f = 1 MHz 0.45 V R - Reverse V oltage ( V ) CD - Diode Capacitance ( pF ) 0.7 Fig. 3 Forward Current vs. Forward Voltage 0.50 0.40 0.35 0.30 0.25 0.20 0.15 0.10 250 200 150 100 50 0.05 0 0.01 0.00 0 4 18334 8 12 16 20 24 28 VR - Reverse V oltage (V) Fig. 2 Diode Capacitance vs. Reverse Voltage www.vishay.com 2 0.6 VF - Forward Voltage ( V ) 18326 18330 0.1 1.0 10 100 1000 IR - Reverse Current ( µA ) Fig. 4 Reverse Voltage vs. Reverse Current Document Number 85694 Rev. 1.2, 26-Apr-04 BAR64V-04 VISHAY Vishay Semiconductors 12 IF = 10 mA IR = 6 mA i rr = 3 mA I F - Forward Current ( mA ) 10 8 6 4 2 0 -2 -4 -6 -8 -500 500 1500 2500 3500 Recovery Time ( ns ) 18338 Fig. 5 Typical Charge Recovery Curve Package Dimensions in mm (Inches) 3.1 (.122) 2.8 (.110) Mounting Pad Layout 0.8 (0.031) 0.4 (.016) 3 2.0 (0.079) 2 1.15 (.045) 0.95 (0.037) 0.95 (.037) 0.95 (0.037) 0.125 (.005) max 0.1 (.004) 0.95 (.037) 0.175 (.007) 1 0.95 (.037) 1.33 (.052) 1.43 (.056) 0.9 (0.035) ISO Method A 2.6 (.102) 0.4 (.016) Document Number 85694 Rev. 1.2, 26-Apr-04 0.4 (.016) 2.4 (.094) 17418 www.vishay.com 3 BAR64V-04 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85694 Rev. 1.2, 26-Apr-04