WINNERJOIN C945 Transistor (npn) Datasheet

RoHS
C945
C945
TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
PCM:
Collector current
ICM:
0.4
1. EMITTER
W (Tamb=25℃)
2. COLLECTOR
0.15
A
3. BASE
Collector-base voltage
V (BR) CBO:
60
V
1 2 3
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=1mA, IE=0
60
V
Collector-emitter
voltage
V(BR)CEO
IC=100uA , IB=0
50
V
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=45V
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=6V, IC=1mA
70
hFE(2)
VCE=6V, IC=0.1mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
fT
VCE=6V, IC=10mA, f =30 MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHZ
Noise figure
NF
VCE=6V, IC=0.1mA
Rg=10kΩ, f=1kMHZ
breakdown
Emitter-base breakdown voltage
700
DC current gain
Transition frequency
200
MHz
4
3.0
pF
10
dB
CLASSIFICATION OF hFE(1)
Rank
Range
O
Y
GP
70-140
120-240
200-400
WEJ ELECTRONIC CO.,LTDHttp:// www.wej.cn
BL
350-700
E-mail:[email protected]
Similar pages