DATA SHEET BZT52Bxx Series SEMICONDUCTOR H SOD-123 Plastic-Encapsulate Zener Diode Features z Low Zener Impedance z Power Dissipation of 350mW z High Stability and High Reliability Mechanical Data z z z SOD-123 Flat Lead SOD-123 Small Outline Plastic Package Polarity: Color band denotes cathode end Mounting Position: Any Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Pd 350 1) mW Power Dissipation 1) 2) 3) Forward Voltage @IF=10mA Vf 0.9 2) V Storage temperature range Ts -65-+150 ℃ Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² Short duration test pulse used to minimize self-heating effect f=1KHz Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Maximum Zener Impedance Zzk Zzt Izk @Izk @Izt Ω mA Zener Voltage Range Device Marking Vz@Izt Izt Nom(V) Min(V) Max(V) mA Maximum Reverse Current IR VR uA V Typical Temperature coefficent @ IZTC=mV/℃ Min Max Test Current IZTC mA BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52B8V2 2WD 8.2 8.04 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52B9V1 2WE 9.1 8.92 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52B10 2WF 10 9.80 10.20 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52B11 2WG 11 10.78 11.22 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52B12 2WH 12 11.76 12.24 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52B13 2WI 13 12.74 13.26 5 30 170 1.0 0.1 8.0 7.0 11.0 5 http://www.yeashin.com 1 REV.02 20140214 DEVICE CHARACTERISTICS BZT52Bxx Series Maximum Zener Impedance Zzt Zzk Izk @Izt @Izk mA Ω Zener Voltage Range Device Marking Vz@Izt Izt Nom(V) Min(V) Max(V) mA 15 14.70 15.30 5 1.0 VR V 0.1 10.5 9.2 13.0 Test Current IZTC mA 2WJ BZT52B16 2WK 16 15.68 16.32 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52B18 2WL 18 17.64 18.36 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52B20 2WM 20 19.60 20.40 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52B22 2WN 22 21.56 22.44 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52B24 2WO 24 23.52 24.48 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52B27 2WP 27 26.46 27.54 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52B33 2WR 33 32.34 33.66 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52B36 2WS 36 35.28 36.72 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52B39 2WT 39 38.22 39.78 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52B43 2WU 43 41.16 43.84 2 100 700 1.0 0.1 32.0 10.0 12.0 5 2 200 IR uA Typical Temperature coefficent @ IZTC=mV/℃ Min Max BZT52B15 http://www.yeashin.com 30 Maximum Reverse Current 5 REV.02 20140214 PACKAGE OUTLINE & DIMENSIONS BZT52Bxx Series SOD-123 PACKAGE OUTLINEPlastic surface mounted package θ θ Precautions: PCB Design Recommended land dimensions for SOD-123 diode. Electrode patterns for PCBs 技术要求: 3.24 1.0 中心距: 3.24 1, 塑封体尺寸: 2.70 X 1.60 脚 宽: 0.55 2: 未注公差为: ±0.05 焊盘宽: 1.00 3, 所有单位: mm 长: 0.50 焊盘长: 0.80 脚 0.8 http://www.yeashin.com 3 REV.02 20140214