NCE Power NCE01P18L Nce p-channel enhancement mode power mosfet Datasheet

Pb Free Product
NCE01P18L
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P18L uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications. It is ESD protested.
General Features
● VDS =-100V,ID =-18A
Schematic diagram
RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
Application
● Power management in notebook computer
Marking and pin assignment
● Portable equipment and battery powered systems
100% UIS TESTED!
100% ∆Vds TESTED!
TO-251S top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE01P18L
NCE01P18L
TO-251S
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-100
V
Gate-Source Voltage
VGS
±20
V
ID
-18
A
ID (100℃)
-12
A
Pulsed Drain Current
IDM
-72
A
Maximum Power Dissipation
PD
70
W
0.56
W/℃
-55 To 150
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
TJ,TSTG
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc
1.79
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-100
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-100V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±20
μA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.9
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-16A
-
85
100
mΩ
gFS
VDS=-50V,ID=-10A
5
-
-
S
-
1300
-
PF
-
400
-
PF
-
240
-
PF
-
16
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-25V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-50V,ID=-16A
-
73
-
nS
td(off)
VGS=-10V,RGEN=9.1Ω
-
34
-
nS
-
57
-
nS
-
61
-
nC
-
14
-
nC
-
29
-
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-80V,ID=-16A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
VSD
VGS=0V,IS=-18A
-
-
-1.2
V
IS
-
-
-
-18
A
trr
TJ = 25°C, IF =-18A
-
88.3
-
nS
(Note3)
-
65.9
-
nC
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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NCE01P18L
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 2 Transfer Characteristics
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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ID- Drain Current (A)
C Capacitance (nF)
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TC Case Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9 Drain Current vs Case Temperature
ID- Drain Current (A)
Power Dissipation (w)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Power De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-251S Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.250
2.350
0.089
0.093
A1
1.150
1.250
0.045
0.049
B
10.200
10.800
0.402
0.425
b
0.550
0.650
0.022
0.026
b1
0.750
0.850
0.030
0.033
c
0.480
0.540
0.019
0.021
c1
0.480
0.540
0.019
0.021
D
6.400
6.600
0.252
0.260
D1
5.250
5.350
0.207
0.211
E
5.400
5.600
0.213
0.220
e1
2.300 TYP
0.091 TYP
e2
2.300 TYP
0.091 TYP
L
3.300
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3.700
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NCE01P18L
Attention:
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require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
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that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
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