Kexin HN1A01FU Pnp transistor Datasheet

Transistors
SMD Type
PNP Transistors
HN1A01FU
(KN1A01FU )
■ Features
● High voltage and high current
● High hFE: hFE = 120~400
● Excellent hFE linearity
● Small package (Dual type)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-50
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-150
Base current
IB
-30
Collector Power Dissipation
PC
200
Junction Temperature
Storage Temperature range
TJ
125
Tstg
-55 to 125
Unit
V
mA
mW
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-50
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-50
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -50 V , IE=0
-100
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-100
V
Collector-emitter saturation voltage
VCE(sat)
IC=-100 mA, IB=-10mA
-0.3
Base - emitter saturation voltage
VBE(sat)
IC=-100 mA, IB=-10mA
-1.2
DC current gain
hFE
VCE= -6V, IC= -2mA
Collector output capacitance
Cob
VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IC= -1mA
120
nA
V
400
7
80
Unit
pF
MHz
■ Classification of hfe
Type
HN1A01FU-Y
HN1A01FU-G
Range
120-240
200-400
Marking
D1Y
D1G
www.kexin.com.cn
1
Transistors
SMD Type
PNP Transistors
HN1A01FU
■ Typical Characterisitics
2
www.kexin.com.cn
(KN1A01FU )
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