CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTD190P10J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-8A RDS(ON)@VGS=-7V, ID=-8A RDS(ON)@VGS=-4.5V, ID=-8A -100V -8.4A 194mΩ(typ) 204mΩ(typ) 244mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit Outline MTD190P10J3 TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTD190P10J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD190P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=-10V Continuous Drain Current @TC=100°C, VGS=-10V Continuous Drain Current @TA=25°C, VGS=-10V Continuous Drain Current @TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.5mH, ID=-8.4A, VDD=-25V TC=25°C TC=100°C Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range (Note 1) Symbol Limits VDS VGS -100 ±20 -8.4 -5.3 -2.4 -1.9 -34 -8.4 18 31 12 2.5 1.6 -55~+150 ID (Note 1) (Note 2) IDSM (Note 2) IDM IAS EAS (Note 3) (Note 3) (Note 2) (Note 1) PD (Note 1) (Note 2) PDSM (Note 2) Tj, Tstg Unit V A mJ W °C * 100% UIS testing in condition of VD=-25V, L=0.1mH, VG=-10V, IAS=-12A, Rated VDS=-100V Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient, t≤10s (Note 2) Thermal Resistance, Junction-to-ambient, steady state Symbol RθJC RθJA Typical 3.6 15 40 Maximum 4 18 50 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTD190P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 3/ 9 Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 Min. Typ. Max. -100 -1.5 - 194 204 244 9 -2.5 ±100 -1 -25 240 250 330 - GFS *1 Dynamic Qg *1, 2 16.8 25.2 Qgs *1, 2 3.4 Qgd *1, 2 4.6 td(ON) *1, 2 9 13.5 tr 16.8 25.2 *1, 2 td(OFF) *1, 2 40.8 61.2 tf *1, 2 27.2 40.8 Ciss 720 Coss 43 Crss 32 Rg 5.2 Source-Drain Diode Ratings and Characteristics IS *1 -8.4 ISM *1 -34 VSD *1 -0.92 -1.2 trr 26 39 Qrr 35 - Unit V nA μA mΩ S Test Conditions VGS=0V, ID=-250μA VDS =VGS, ID=-250μA VGS=±20V, VDS=0V VDS =-80V, VGS =0V VDS =-80V, VGS =0V, TJ=125°C VGS =-10V, ID=-8A VGS =-7V, ID=-8A VGS =-4.5V, ID=-8A VDS =-15V, ID=-8A nC ID=-8A, VDS=-80V, VGS=-10V ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω pF VGS=0V, VDS=-25V, f=1MHz Ω f=1MHz A V ns nC IS=-8A, VGS=0V IF=-8A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTD190P10J3 CYStek Product Specification Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 20 16 14 12 -BVDSS, Normalized Drain-Source Breakdown Voltage 18 -I D, Drain Current(A) 5V 10V 9V 8V 7V 6V 4.5V 10 -VGS=4V 8 6 -VGS=3.5V 4 1.2 1.0 0.8 0.6 ID=-250μA, VGS=0V 2 0.4 0 0 2 4 6 8 10 12 14 16 -VDS, Drain-Source Voltage(V) 18 -75 -50 -25 20 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 In descending order VGS= -4.5V -7V -10V 800 -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 600 400 200 Tj=25°C VGS=0V 1.0 0.8 Tj=150°C 0.6 0.4 0.2 0 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 R DS(ON) , Normalized Static DrainSource On-State Resistance 1000 ID=-8A 800 600 400 200 0 0 MTD190P10J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 2 4 6 8 -IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VGS=-10V, ID=-8A RDS(ON) @Tj=25°C : 194mΩ typ. -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage Capacitance---(pF) f=1MHz -VGS(th), Normalized Threshold Voltage 1000 Ciss 100 C oss Crss 1.4 1.2 ID=-1mA 1.0 0.8 0.6 ID=-250μA 0.4 0.2 10 0 10 20 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Gate Charge Characteristics Maximum Safe Operating Area 10 100 10 -VGS, Gate-Source Voltage(V) -I D, Drain Current (A) 100μs RDS(ON) Limited 1ms 10ms 100ms 1 TC=25°C, Tj=150°C, VGS=-10V, RθJC=4°C/W, single pulse 1s DC VDS=-50V 8 VDS=-20V 6 4 VDS=-80V 2 ID=-8A 0 0.1 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 4 10 20 9 18 8 16 7 6 5 4 3 2 VDS=-10V 14 12 10 8 6 4 VGS=-10V, Tj(max)=150°C, RθJC=4°C/W, single pulse 1 20 Typical Transfer Characteristics -ID, Drain Current(A) -I D, Maximum Drain Current(A) Maximum Drain Current vs Case Temperature 8 12 16 Qg, Total Gate Charge(nC) 2 0 0 25 MTD190P10J3 50 75 100 125 TC , Case Temperature(°C) 150 175 0 1 2 3 4 5 6 7 8 9 10 -VGS, Gate-Source Voltage(V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 6/ 9 Typical Characteristics (Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case GFS , Forward Transfer Admittance(S) 100 3000 2500 TJ(MAX) =150°C TC=25°C RθJC=4°C/W Power (W) 10 1 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 1500 1000 VDS=-15V Pulsed Ta=25°C 0.1 2000 500 10 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=4°C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTD190P10J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTD190P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD190P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C108J3 Issued Date : 2015.12.29 Revised Date : Page No. : 9/ 9 TO-252 Dimension Marking: 4 Device Name D190 P10 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD190P10J3 CYStek Product Specification