MMBV609LT1 Preferred Device Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for high volume, pick and place assembly requirements. http://onsemi.com Features • • • • • • • • High Figure of Merit − Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz Guaranteed Capacitance Range Dual Diodes − Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching Hyper Abrupt Junction Process Provides High Tuning Ratio Pb−Free Package is Available DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 3 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 20 Vdc Forward Current IF 100 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +125 °C Reverse Voltage 1 2 2 3 SOT−23 (TO−236) CASE 318 STYLE 9 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 5L M G G 1 5L = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBV609LT1 SOT−23 3,000 / Tape & Reel MMBV609LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MMBV609LT1/D MMBV609LT1 ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 20 − − Vdc Reverse Voltage Leakage Current (VR = 15 Vdc) IR − − 10 nAdc Diode Capacitance (VR = 3.0 Vdc, f = 1.0 MHz) CT 26 − 32 pF Capacitance Ratio C3/C8 (f = 1.0 MHz) CR 1.8 − 2.4 − Figure of Merit (VR = 3.0 Vdc, f = 50 MHz) Q 250 450 − − Reverse Breakdown Voltage (IR = 10 mAdc) TYPICAL CHARACTERISTICS 1000 40 Q, FIGURE OF MERIT f = 1.0 MHz TA = 25°C 30 20 VR = 3 Vdc TA = 25°C 100 10 0 1 2 3 5 10 7 20 30 10 40 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 50 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 +25 0 +50 +75 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance http://onsemi.com 2 +100 +125 1000 MMBV609LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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