ON MMBV609LT1 Silicon tuning diode Datasheet

MMBV609LT1
Preferred Device
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top−of−the−line application requiring
back−to−back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT−23 plastic package for
high volume, pick and place assembly requirements.
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Features
•
•
•
•
•
•
•
•
High Figure of Merit − Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz
Guaranteed Capacitance Range
Dual Diodes − Save Space and Reduce Cost
Surface Mount Package
Available in 8 mm Tape and Reel
Monolithic Chip Provides Improved Matching
Hyper Abrupt Junction Process Provides High Tuning Ratio
Pb−Free Package is Available
DUAL VOLTAGE VARIABLE
CAPACITANCE DIODE
1
3
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
VR
20
Vdc
Forward Current
IF
100
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
−55 to +125
°C
Reverse Voltage
1
2
2
3
SOT−23 (TO−236)
CASE 318
STYLE 9
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
5L M G
G
1
5L = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBV609LT1
SOT−23
3,000 / Tape & Reel
MMBV609LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Publication Order Number:
MMBV609LT1/D
MMBV609LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
20
−
−
Vdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
IR
−
−
10
nAdc
Diode Capacitance
(VR = 3.0 Vdc, f = 1.0 MHz)
CT
26
−
32
pF
Capacitance Ratio C3/C8
(f = 1.0 MHz)
CR
1.8
−
2.4
−
Figure of Merit
(VR = 3.0 Vdc, f = 50 MHz)
Q
250
450
−
−
Reverse Breakdown Voltage
(IR = 10 mAdc)
TYPICAL CHARACTERISTICS
1000
40
Q, FIGURE OF MERIT
f = 1.0 MHz
TA = 25°C
30
20
VR = 3 Vdc
TA = 25°C
100
10
0
1
2
3
5
10
7
20
30
10
40
10
100
VR, REVERSE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
CT , DIODE CAPACITANCE (pF)
50
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
−50
−25
+25
0
+50
+75
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
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2
+100
+125
1000
MMBV609LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBV609LT1/D
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