EMX2 / UMX2N / IMX2 Transistors General purpose (dual transistors) EMX2 / UMX2N / IMX2 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC2412AK chips in a EMT or UMT or SMT package. zEquivalent circuits (5) (6) (3) (4) (2) (1) Tr1 Tr2 (4) (5) (5) (6) Tr1 Tr2 (6) (1) 0.5 IMX2 (2) 1.2 1.6 0.13 EMX2 / UMX2N (3) (4) 0.5 0.5 1.0 1.6 0.22 EMX2 (3) (2) (1) ROHM : EMT6 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) EMX2 / UMX2N PC IMX2 Junction temperature Storage temperature 150(TOTAL) 300(TOTAL) mW Tj 150 °C Tstg −55 to +150 °C ∗1 1.25 ∗2 2.1 0.1Min. ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0~0.1 Collector power dissipation 1.3 2.0 mA 0.9 150 0.65 V IC Collector current 0.65 7 0.7 VEBO (3) V Emitter-base voltage (2) V 50 (1) 60 VCEO (4) VCBO Collector-emitter voltage (6) Collector-base voltage UMX2N (5) Unit 0.2 Limits 0.15 Symbol Parameter Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 zPackage, marking, and packaging specifications 3000 1.6 2.8 0.3Min. ROHM : SMT6 EIAJ : SC-74 1.1 3000 0.95 0.95 1.9 2.9 8000 IMX2 0.8 Basic ordering unit (pieces) X2 (1) T108 (2) X2 TR (3) X2 T2R (6) Marking Code (5) SMT6 (4) IMX2 UMT6 0~0.1 UMX2N EMT6 0.3 EMX2 0.15 Type Package Each lead has same dimensions Rev.A 1/3 EMX2 / UMX2N / IMX2 Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 7 − − − − 0.1 V µA IE=50µA VCB=60V VEB=7V Emitter cutoff current Collector-emitter saturation voltage Conditions IEBO − − 0.1 µA VCE(sat) − − 0.4 V IC/IB=50mA/5mA hFE 120 − 560 − VCE=6V, IC=1mA DC current transfer ratio Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF VCE=12V, IE= −2mA, f=100MHz ∗ VCB=12V, IE=0mA, f=1MHz ∗Transition frequency of the device. zElectrical characteristics curves COLLECTOR CURRENT : IC (mA) 2 1 25°C −55°C 5 0.5 0.2 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig.1 0.4 0.8 1.2 Fig.2 Grounded emitter propagation characteristics 500 DC CURRENT GAIN : hFE Ta=100°C VCE=5V 3V 1V 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 VCE=5V 25°C 200 −55°C 100 50 20 10 0.2 27µA 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 2.0 30µA Ta=25°C 8 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter output characteristics ( Ι ) Ta=25°C 200 1.6 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 0.25mA 60 0 0.1 0 500 80 10 Fig.3 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 Ta=100°C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m A m 35 0. 0.30mA Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Grounded emitter output characteristics ( ΙΙ ) 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current Rev.A 2/3 EMX2 / UMX2N / IMX2 IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 IC/IB=50 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.02 0.01 0.2 COLLECTOR CURRENT : IC (mA) 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0A 2 2 5 10 20 50 100 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 0.5 1 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 TRANSITION FREQUENCY : fT (MHz) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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