<$£mi-(l on ., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MTP25N05E TMOS IV risvvc;i i iv^iui i_ii«7i*b iiciiioioiui N-Channel Enhancement-Mode Silicon Gate This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain-to-source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. • ipto'n"1 ^'''m-to-n'pin riiortf) ripfiqrifiri to pBp|acB __..„,, External Zener Transient Suppressor — Absorbs High iV^k ^SB Energy in the Avalanche Mode — Undamped ^•Hf""' Inductive Switching (UIS) Energy Capability Specified l l l l at 100'C. ' l | | | • Commutating Safe Operating Area (CSOA) Specified for •JH5it»' 11,9 in Halt pprt Full Rririfji, Circuits .. ,^™**~ .. • Source to-Drgin Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits TMOS POWER FETs 25 AMPERES rDS(on) = 0,07 OHM 50 VOLTS .jj> TO-220AB MAXIMUM RATINGS (Tj = 25'C unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage VDSS SO Drain-Gate Voltage (RQS - 1 Mil) VDGR 60 Vdc Vdc Gate-Source Voltage — Continuous — Non-repetitive dp § 50 us) VGS VGSM ±20 ±40 Vdc Vpk ID IDM PD 25 80 Artc 100 0.8 Watts -6510 150 •c 1.25 62.5 °OW 275 •C Drain Current —> Continuous — Pulsed Total Power Dissipation fi TC - 25°C Derate above 2S'C Operating and Storage Temperature Range Tj, T8(g THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8* from case for 5 seconds R«JC TL LHsIgntr's Data for "Wo»t C«M" Conditions — Tno Designer's Data Sheet permits the design of most circuits entirely from tho ioformvllon pr«**it«d SQA Limit Curves — representing boundaries on devfca charBCtenstics — era given to facilitate "worst C4»" design. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Inrormat.on furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders Oiinlltv MTP2SN05E ELECTRICAL CHARACTERISTICS (Tc - 2S'C unless otherwise noted) Symbol Mln V(BR)DSS 60 — - 10' 100 IGSSF IGSSR — — 100 • nAdc 100 nAdc VGStth) 2 1.6 4 3.5 Vdc Static Drain-Source On-Reslstance (VQS = 10 Vdc, ID -> 16 Adc) fDS(on) — 0.07 Drain-Source On-Voltage (VQS » 10 V) VDS(on) - 2 1 Charae;erlstic OFF CHARACTERISTICS Drain-Source Breakdown Voltage P/GS - 0, ID - 0.25 mA) IDSS Zero Gate Voltage Drain Current (VDS - R»ted VDSS- VQS - o) (Vos = Rated VDSS- VGS - 0, Tj = 12S°C) Gate-Body Leakage Current, Forward (VGSF = 20 vdc- VDS » 0) Gate-Body Leakage Currant, Reverse (VQSR - 20 Vdc, VDS= 01 Vdc MA ON CHARACTERISTICS* Gate Threshold Voltage (Vos - VGS. ID - zso <iA, TJ - 100=0 (ID = 25 Adc) (ID - 12.8 Ade, Tj = 100-C) OFS Forward Transconductflnco (VDS = 1'7S v< 'D = '6 A) Ohm Vdc 9 — mhos DRAIN-TO-SOURCe AVALANCHE CHARACTERISTICS Undamped Drain-to-Source Avalanche Energy See Figures 14 and 15 do - 80 A, VOQ - 26 V, TC - 25«C, Single Pulse, Non-repetitive) (ID - 25 A, VDD = 25 V, TC - 26'C, P.W. * 200 MS, Duty Cycle « 1%) (ID = 10 A, VDD = 26 V,TC = HWC, P.W. s 200 ia, Duty Cycle •; 1%) mJ WOSR - 90 200 90 DYNAMIC CHARACTERISTICS Input Capacitance (VDS - Output Capacitance 25 v' VGS - o, f - 1 MHz) See Figure 16 Reverse Transfer Capacitance C|35 - 1600 COGS — Crss — 800 200 td(on) — _ pF SWITCHING CHARACTERISTICS' (Tj -- 100'C) Turn-On Delay Time (VDD - 26 v, ID - 16 A Rise Tims Rgen = 15 ohms) See Figure 9 Turn-Off Delay Time Fall Time Total Gale Charge Gate-Source Charge Gate-Drain Charge (Vos - 0.8 Rated VDSS. ID - Rated ID, VQS - 10 V) See Rgures 17 and 18 tr 26 tf — — 35 «d(off) ns 36 45 Ofl 28 (Typ) 30 Ofl8 14 (Typ) — °gd 12 (Typ) - VSD 1.3 (Typ) 1.6 nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Vollage Forward Turn-On Time (Is - 26 A VQS - 0) Reverse Recovery Time 'on 'rr Vdc Limited by stray Inductance 180lTyp) — 3.5 (Typ) 4.8 (Typ) - 7.8 (Typ) —' ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25* from package to center of die) Ld Internal Source Inductance (Measured from the source lead 0.2E* from package to source bond pad.) L. •Pulu T»sl: Pulu Width « 300 /u. Duty Cycle < 2%. nH