Mitsubishi CM2400HC-34H High power switching use insulated type Datasheet

MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM2400HC-34H
● IC ................................................................ 2400A
● VCES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190 ±0.5
171 ±0.1
57 ±0.1
57 ±0.1
6 - M8 NUTS
57 ±0.1
C
C
C
E
E
E
20 –0.2
+0.1
C
C
CM
E
C
E
E
124 ±0.1
140 ±0.5
C
40 ±0.2
C
G
E
E
CIRCUIT DIAGRAM
G
20.25 ±0.2
41.25 ±0.3
screwing depth
min. 16.5
15 ±0.2
40 ±0.3
LABEL
29.5 ±0.5
5.2 ±0.2
5 ±0.15
61.5 ±0.3
13 ±0.2
28 +10
61.5 ±0.3
screwing depth
min. 7.7
8 - φ7 ±0.1 MOUNTING HOLES
79.4 ±0.3
38 +10
3 - M4 NUTS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 80°C
Pulse
(Note 1)
Pulse
TC = 25°C, IGBT part
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1150V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
Ratings
Unit
1700
±20
2400
4800
2400
4800
17800
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
V
V
A
A
A
A
W
°C
°C
°C
V
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Cies
Coes
Cres
Qg
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VEC (Note 2)
Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
ICES
VGE(th)
IGES
VCE(sat)
Note 1.
2.
3.
4.
VCE = VCES, VGE = 0V, Tj = 25°C
Min
—
Limits
Typ
—
Max
36
IC = 240mA, VCE = 10V, Tj = 25°C
4.5
5.5
6.5
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.60
3.10
210
30.0
10.1
19.8
2.30
1.85
—
—
810
—
—
870
—
630
330
0.5
3.30
—
—
—
—
—
3.00
—
1.60
1.30
—
2.70
0.80
—
2.70
—
—
µA
Item
Conditions
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 2400A, VGE = 15V, Tj = 25°C
IC = 2400A, VGE = 15V, Tj = 125°C
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 850V, IC = 2400A, VGE = 15V, Tj = 25°C
IE = 2400A, VGE = 0V, Tj = 25°C
(Note 4)
IE = 2400A, VGE = 0V, Tj = 125°C
(Note 4)
VCC = 850V, IC = 2400A, VGE = ±15V
RG(on) = 0.27Ω, Tj = 125°C, Ls = 80nH
Inductive load
VCC = 850V, IC = 2400A, VGE = ±15V
RG(off) = 0.27Ω, Tj = 125°C, Ls = 80nH
Inductive load
VCC = 850V, IC = 2400A, VGE = ±15V
RG(on) = 0.27Ω, Tj = 125°C, Ls = 80nH
Inductive load
Unit
mA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
µC
mJ/pulse
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Min
—
—
—
Limits
Typ
—
—
6.0
Max
7.0
12.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M
Mounting torque
—
CTI
da
ds
LC-E(int)
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
Limits
Typ
—
—
—
1.5
—
—
—
10
Max
13.0
6.0
2.0
—
—
—
—
—
Unit
N·m
kg
—
mm
mm
nH
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
4800
4800
VCE = 10V
Tj = 25°C
VGE = 15V
VGE = 20V
4000
4000
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
VGE = 12V
3200
VGE = 10V
2400
1600
VGE = 8V
800
3200
2400
1600
800
Tj = 25°C
Tj = 125°C
0
1
2
3
4
5
0
6
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
12
5
VGE = 15V
EMITTER-COLLECTOR VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
4
3
2
1
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
800
1600
2400
3200
4000
4800
COLLECTOR CURRENT (A)
Tj = 25°C
Tj = 125°C
0
0
800
1600
2400
3200
4000
4800
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
20
VCC = 850V, IC = 2400A
Tj = 25°C
7
5
3
CAPACITANCE (nF)
GATE-EMITTER VOLTAGE (V)
Cies
2
102
7
5
3
Coes
2
101
Cres
7
5
16
12
8
4
3
2
VGE = 0V, Tj = 25°C
f = 100kHz
100 -1
10
2 3
5 7 101
5
10
15
20
25
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
5000
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 0.27Ω
Tj = 125°C, Inductive load
VCC = 850V, IC = 2400A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
Eoff
1500
1000
500
Erec
0
0
COLLECTOR-EMITTER VOLTAGE (V)
2000
0
0
5 7 102
2 3
SWITCHING ENERGIES (mJ/pulse)
SWITCHING ENERGIES (mJ/pulse)
2500
5 7 100
2 3
800
1600
2400
3200
4000
4800
COLLECTOR CURRENT (A)
Eon
4000
3000
Eoff
2000
1000
0
Erec
0
0.5
1
1.5
2
2.5
3
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
101
7
5
102
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 0.27Ω
Tj = 125°C, Inductive load
REVERSE RECOVERY TIME (µs)
3
td(off)
100
7
5
td(on)
3
tf
2
10-1
7
5
tr
NORMALIZED TRANSIENT THERMAL IMPEDANCE
3
2
2
101
3
2
2
100
2 3
5 7 103
2 3
7
5
3
trr
10-1 1
10
5 7 104
2 3
5 7 102
2
2 3
5 7 103
101
2 3
5 7 104
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
1.2
1.0
102
7
5
2
5 7 102
7
5
3
3
2 3
103
Irr
7
5
2
10-2 1
10
7
5
3
3
6000
Single Pulse, TC = 25°C
Rth(j–c)Q = 7K/kW
Rth(j–c)R = 12K/kW
0.8
0.6
0.4
0.2
VCC ≤ 1150V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 0.27Ω
5000
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
2
104
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 0.27Ω
Tj = 125°C, Inductive load
7
5
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
4000
3000
2000
1000
0 -3
10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Similar pages