MITSUBISHI HVIGBT MODULES CM2400HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM2400HC-34H ● IC ................................................................ 2400A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate ● Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 6 - M8 NUTS 57 ±0.1 C C C E E E 20 –0.2 +0.1 C C CM E C E E 124 ±0.1 140 ±0.5 C 40 ±0.2 C G E E CIRCUIT DIAGRAM G 20.25 ±0.2 41.25 ±0.3 screwing depth min. 16.5 15 ±0.2 40 ±0.3 LABEL 29.5 ±0.5 5.2 ±0.2 5 ±0.15 61.5 ±0.3 13 ±0.2 28 +10 61.5 ±0.3 screwing depth min. 7.7 8 - φ7 ±0.1 MOUNTING HOLES 79.4 ±0.3 38 +10 3 - M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES ≤ 1700V, VGE = 15V Tj = 125°C Ratings Unit 1700 ±20 2400 4800 2400 4800 17800 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 V V A A A A W °C °C °C V 10 µs ELECTRICAL CHARACTERISTICS Symbol Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VEC (Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy ICES VGE(th) IGES VCE(sat) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25°C Min — Limits Typ — Max 36 IC = 240mA, VCE = 10V, Tj = 25°C 4.5 5.5 6.5 V — — — — — — — — — — — — — — — — — — — 2.60 3.10 210 30.0 10.1 19.8 2.30 1.85 — — 810 — — 870 — 630 330 0.5 3.30 — — — — — 3.00 — 1.60 1.30 — 2.70 0.80 — 2.70 — — µA Item Conditions VGE = VGES, VCE = 0V, Tj = 25°C IC = 2400A, VGE = 15V, Tj = 25°C IC = 2400A, VGE = 15V, Tj = 125°C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 2400A, VGE = 15V, Tj = 25°C IE = 2400A, VGE = 0V, Tj = 25°C (Note 4) IE = 2400A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 2400A, VGE = ±15V RG(on) = 0.27Ω, Tj = 125°C, Ls = 80nH Inductive load VCC = 850V, IC = 2400A, VGE = ±15V RG(off) = 0.27Ω, Tj = 125°C, Ls = 80nH Inductive load VCC = 850V, IC = 2400A, VGE = ±15V RG(on) = 0.27Ω, Tj = 125°C, Ls = 80nH Inductive load Unit mA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs µC mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 6.0 Max 7.0 12.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque — CTI da ds LC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part Min 7.0 3.0 1.0 — 600 19.5 32.0 — Limits Typ — — — 1.5 — — — 10 Max 13.0 6.0 2.0 — — — — — Unit N·m kg — mm mm nH HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 4800 4800 VCE = 10V Tj = 25°C VGE = 15V VGE = 20V 4000 4000 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VGE = 12V 3200 VGE = 10V 2400 1600 VGE = 8V 800 3200 2400 1600 800 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 12 5 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 4 3 2 1 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 800 1600 2400 3200 4000 4800 COLLECTOR CURRENT (A) Tj = 25°C Tj = 125°C 0 0 800 1600 2400 3200 4000 4800 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCC = 850V, IC = 2400A Tj = 25°C 7 5 3 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 2 102 7 5 3 Coes 2 101 Cres 7 5 16 12 8 4 3 2 VGE = 0V, Tj = 25°C f = 100kHz 100 -1 10 2 3 5 7 101 5 10 15 20 25 GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 5000 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 0.27Ω Tj = 125°C, Inductive load VCC = 850V, IC = 2400A VGE = ±15V Tj = 125°C, Inductive load Eon Eoff 1500 1000 500 Erec 0 0 COLLECTOR-EMITTER VOLTAGE (V) 2000 0 0 5 7 102 2 3 SWITCHING ENERGIES (mJ/pulse) SWITCHING ENERGIES (mJ/pulse) 2500 5 7 100 2 3 800 1600 2400 3200 4000 4800 COLLECTOR CURRENT (A) Eon 4000 3000 Eoff 2000 1000 0 Erec 0 0.5 1 1.5 2 2.5 3 GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 7 5 102 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 0.27Ω Tj = 125°C, Inductive load REVERSE RECOVERY TIME (µs) 3 td(off) 100 7 5 td(on) 3 tf 2 10-1 7 5 tr NORMALIZED TRANSIENT THERMAL IMPEDANCE 3 2 2 101 3 2 2 100 2 3 5 7 103 2 3 7 5 3 trr 10-1 1 10 5 7 104 2 3 5 7 102 2 2 3 5 7 103 101 2 3 5 7 104 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1.2 1.0 102 7 5 2 5 7 102 7 5 3 3 2 3 103 Irr 7 5 2 10-2 1 10 7 5 3 3 6000 Single Pulse, TC = 25°C Rth(j–c)Q = 7K/kW Rth(j–c)R = 12K/kW 0.8 0.6 0.4 0.2 VCC ≤ 1150V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 0.27Ω 5000 COLLECTOR CURRENT (A) SWITCHING TIMES (µs) 2 104 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 0.27Ω Tj = 125°C, Inductive load 7 5 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 4000 3000 2000 1000 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005