Preliminary Datasheet BCR20FM-12LB 600V - 20A - Triac Medium Power Use R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 Features Insulated Type Planar Passivation Type Viso : 2000 V IT (RMS) : 20 A VDRM : 600 V Tj: 150 °C IFGTI, IRGTI, IRGTIII: 30 mA (20mA) Note5 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 12 600 720 Symbol VDRM VDSM Unit V V Symbol Ratings Unit RMS on-state current IT (RMS) 20 A Commercial frequency, sine full wave 360 conduction, Tc = 104C Surge on-state current ITSM 200 A 60 Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 167 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.9 2000 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note6 R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute T1T2G terminal to case Page 1 of 7 BCR20FM-12LB Preliminary Electrical Characteristics Parameter Symbol Repetitive peak off-state current On-state voltage IDRM VTM Min. — — Rated value Typ. Max. — 3.0 — 1.5 Unit Test conditions mA V Tj = 150C, VDRM applied Tc = 25C, ITM = 30A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 30 Note5 30 Note5 30 Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 — — — — — — 2.3 — V 1 — — Gate non-trigger voltage Thermal resistance Rth (j-c) Critical-rate of rise of off-state Note4 commutation voltage (dv/dt)c C/W V/s Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Tj = 150C Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) 6. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125/150C 2. Rate of decay of on-state commutating current (di/dt)c = –10A/ms 3. Peak off-state voltage VD = 400 V R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR20FM-12LB Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 240 Surge On-State Current (A) On-State Current (A) 103 102 Tj = 150°C 101 Tj = 25°C 100 0 1 2 3 120 80 40 101 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 5W 101 PG(AV) = 0.5W VGT = 1.5V IGM = 2A 100 IFGT I, IRGT I, IRGT III 10−1 101 102 103 104 103 Typical Example 102 IFGT I IRGT I IRGT III 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) On-State Voltage (V) 0 40 80 120 Junction Temperature (°C) R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 160 Transient Thermal Impedance (°C/W) Gate Voltage (V) 160 0 100 4 VGM = 10V Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 200 102 2.4 103 104 100 101 2.0 1.6 1.2 0.8 0.4 0 −1 10 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR20FM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 Case Temperature (°C) On-State Power Dissipation (W) 40 30 360° Conduction Resistive, inductive loads 20 10 0 0 5 10 15 20 25 30 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 10 20 30 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 140 120 100 80 60 40 160 120 20 100 0 0 160 t2.3 120 t2.3 Ambient Temperature (°C) 160 All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 100 t2.3 5 10 15 20 25 0 0 30 1 2 3 4 5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 Typical Example 105 104 103 102 –40 0 40 80 120 Junction Temperature (°C) R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 160 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) 120 RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Curves apply regardless of conduction angle 140 103 Typical Example 102 101 –40 0 40 80 160 120 Junction Temperature (°C) Page 4 of 7 BCR20FM-12LB Preliminary Breakover Voltage vs. Junction Temperature Distribution T +, G– 2 Typical Example 102 101 T2+, G+ Typical Example T2–, G– 40 80 120 160 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 0 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 100 –40 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz 101 Minimum Characteristics Value III Quadrant I Quadrant 100 3 101 30 Rate of Decay of On-State Commutating Current (A/ms) R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 102 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Latching Current (mA) 103 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant III Quadrant Minimum Characteristics Value 100 3 101 102 30 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR20FM-12LB Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example IRGT I IFGT I IRGT III 102 101 100 101 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 Page 6 of 7 BCR20FM-12LB Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number BCR20FM-12LB#BB0 BCR20FM-12LB-1#BB0 BCR20FM-12LBA8#BB0 BCR20FM12LB1A8#BB0 Note: Packing Tube Tube Tube Tube Quantity 50 pcs. 50 pcs. 50 pcs. 50 pcs. Remark Straight type Straight type, IGT item:1 A8 Lead form A8 Lead form, IGT item:1 Please confirm the specification about the shipping in detail. R07DS0889EJ0100 Rev.1.00 Oct 29, 2012 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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