Renesas BCR20FM-12LBBB0 600v - 20a - triac medium power use Datasheet

Preliminary Datasheet
BCR20FM-12LB
600V - 20A - Triac
Medium Power Use
R07DS0889EJ0100
Rev.1.00
Oct 29, 2012
Features




 Insulated Type
 Planar Passivation Type
 Viso : 2000 V
IT (RMS) : 20 A
VDRM : 600 V
Tj: 150 °C
IFGTI, IRGTI, IRGTIII: 30 mA (20mA) Note5
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
12
600
720
Symbol
VDRM
VDSM
Unit
V
V
Symbol
Ratings
Unit
RMS on-state current
IT (RMS)
20
A
Commercial frequency, sine full wave
360 conduction, Tc = 104C
Surge on-state current
ITSM
200
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2 t
167
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note6
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Conditions
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1T2G terminal to case
Page 1 of 7
BCR20FM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Min.
—
—
Rated value
Typ.
Max.
—
3.0
—
1.5
Unit
Test conditions
mA
V
Tj = 150C, VDRM applied
Tc = 25C, ITM = 30A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30 Note5
30 Note5
30 Note5
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
10
—
—
—
—
—
—
2.3
—
V
1
—
—
Gate non-trigger voltage
Thermal resistance
Rth (j-c)
Critical-rate of rise of off-state
Note4
commutation voltage
(dv/dt)c
C/W
V/s
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Tj = 150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (IGT  20 mA) is also available. (IGT item: 1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –10A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR20FM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
240
Surge On-State Current (A)
On-State Current (A)
103
102
Tj = 150°C
101
Tj = 25°C
100
0
1
2
3
120
80
40
101
102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PGM = 5W
101
PG(AV) =
0.5W
VGT = 1.5V
IGM =
2A
100
IFGT I, IRGT I, IRGT III
10−1
101
102
103
104
103
Typical Example
102
IFGT I
IRGT I
IRGT III
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
On-State Voltage (V)
0
40
80
120
Junction Temperature (°C)
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
160
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
160
0
100
4
VGM = 10V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
200
102
2.4
103
104
100
101
2.0
1.6
1.2
0.8
0.4
0 −1
10
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR20FM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
Case Temperature (°C)
On-State Power Dissipation (W)
40
30 360° Conduction
Resistive,
inductive loads
20
10
0
0
5
10
15
20
25
30
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
10
20
30
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
140
120
100
80
60
40 160
120
20
100
0
0
160 t2.3
120 t2.3
Ambient Temperature (°C)
160
All fins are black painted
aluminum and greased
Curves apply regardless of
conduction angle
Resistive, inductive loads
Natural convection
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
140
120
100
80
60
40
20
100 t2.3
5
10
15
20
25
0
0
30
1
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
Typical Example
105
104
103
102
–40
0
40
80
120
Junction Temperature (°C)
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
160
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Ambient Temperature (°C)
120
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Curves apply regardless
of conduction angle
140
103
Typical Example
102
101
–40
0
40
80
160
120
Junction Temperature (°C)
Page 4 of 7
BCR20FM-12LB
Preliminary
Breakover Voltage vs.
Junction Temperature
Distribution T +, G–
2
Typical Example
102
101
T2+, G+
Typical Example
T2–, G–
40
80
120
160
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10
102
103
104
160
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
0
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
100
–40
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
Minimum
Characteristics
Value
III Quadrant
I Quadrant
100
3
101
30
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
102
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Latching Current (mA)
103
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Latching Current vs.
Junction Temperature
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
100
3
101
102
30
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR20FM-12LB
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
IRGT I
IFGT I
IRGT III
102
101
100
101
102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47µF C0 = 0.1µF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 6 of 7
BCR20FM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR20FM-12LB#BB0
BCR20FM-12LB-1#BB0
BCR20FM-12LBA8#BB0
BCR20FM12LB1A8#BB0
Note:
Packing
Tube
Tube
Tube
Tube
Quantity
50 pcs.
50 pcs.
50 pcs.
50 pcs.
Remark
Straight type
Straight type, IGT item:1
A8 Lead form
A8 Lead form, IGT item:1
Please confirm the specification about the shipping in detail.
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 7 of 7
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