AUTOMOTIVE GRADE AUIRFP4110 HEXFET® Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. D max G ID (Silicon Limited) S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID (Package Limited) 100V 3.7m 4.5m 180A 120A S D G TO-247AC G D S Gate Drain Source Ordering Information Base part number Package Type AUIRFP4110 TO-247AC Standard Pack Form Quantity Tube 25 Complete Part Number AUIRFP4110 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Max. 180 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 130 ID @ TC = 25°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 120 IDM PD @TC = 25°C Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw 670 370 2.5 ± 20 190 108 37 5.3 VGS EAS (Thermally limited) IAR EAR dv/dt TJ TSTG Units A W W/°C V mJ A mJ V/ns -55 to + 175 °C 300 10 lbf·in (1.1 N·m) Thermal Resistance RJC RCS RJA Parameter Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.402 ––– 40 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014 AUIRFP4110 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS Min. Typ. Max. Units 100 ––– ––– V Conditions VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.5 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance Drain-to-Source Leakage Current ––– ––– ––– 20 S IDSS 160 ––– VDS = 50V, ID = 75A VDS =100 V, VGS = 0V ––– ––– 250 ––– ––– ––– ––– ––– 1.3 100 -100 ––– Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG 0.108 ––– V/°C Reference to 25°C, ID = 5mA m VGS = 10V, ID = 75A µA nA VDS =100V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time ––– ––– ––– ––– ––– 150 35 43 25 67 210 ––– ––– ––– ––– td(off) Turn-Off Delay Time ––– 78 ––– tf Ciss Coss Fall Time Input Capacitance Output Capacitance ––– ––– ––– 88 9620 670 ––– ––– ––– Crss Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– 250 ––– ––– 820 ––– VGS = 0V, VDS = 0V to 80V ––– 950 ––– VGS = 0V, VDS = 0V to 80V Min. Typ. Max. Units ––– ––– 180 Coss eff.(ER) Coss eff.(TR) Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ID = 75A nC VDS = 50V VGS = 10V VDD = 65V ID = 75A ns RG= 2.6 VGS = 10V pF A ––– ––– 670 ––– ––– 1.3 ––– ––– ––– ––– ––– 50 60 94 140 3.5 75 90 140 210 ––– V VGS = 0V VDS = 50V ƒ = 1.0MHz Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 75A,VGS = 0V TJ = 25°C VDD = 85V TJ = 125°C IF = 75A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C ns Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 25, IAS = 108A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014 AUIRFP4110 Qualification Information† Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Machine Model TO-247AC Human Body Model ESD Charged Device Model RoHS Compliant † N/A Class M4 (+/- 800)†† AEC-Q101-002 Class H3A (+/- 6000V)†† AEC-Q101-001 Class C5 (+/- 2000)†† AEC-Q101-005 Yes Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Highest passing voltage. 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014 AUIRFP4110 1000 1000 BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V BOTTOM 100 4.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 10 10 0.1 1 10 0.1 100 1000 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 T J = 25°C 10 T J = 175°C 1 VDS = 25V 60µs PULSE WIDTH 0.1 1 2 3 4 5 6 ID = 75A VGS = 10V 2.5 2.0 1.5 1.0 0.5 7 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID= 75A Coss = Cds + Cgd C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss 10000 Coss 1000 Crss 100 10.0 VDS = 80V VDS = 50V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS , Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 50 100 150 200 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 4 4.5V Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback January 29, 2014 AUIRFP4110 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 10msec 10 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 0 2.0 180 Limited By Package ID, Drain Current (A) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 100 1000 125 Id = 5mA 120 115 110 105 100 95 90 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 175 T J , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 800 EAS , Single Pulse Avalanche Energy (mJ) 5.0 4.5 4.0 3.5 Energy (µJ) 10 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 160 1 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ID TOP 17A 27A BOTTOM 108A 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 5 1msec DC www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12. Threshold Voltage vs. Temperature Submit Datasheet Feedback January 29, 2014 AUIRFP4110 Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J 0.001 R2 R2 R3 R 3 C 2 1 3 2 3 C i= i R i C i= i R i SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R1 R1 J 1 C R i (°C /W ) 0 .0 9 8 7 6 2 5 1 0 .2 0 6 6 6 9 7 0 .0 9 5 1 0 4 6 4 i (s e c ) 0 .0 0 0 1 1 1 0 .0 0 1 7 4 3 0 .0 1 2 2 6 9 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 0.10 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 250 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a,22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not exceed Tjmax (assumed as 25°C in figure 14 , 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC (D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 108A 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ Z thJC I av = 2T/ [1.3·BV·Z th ] E AS (AR) = PD (ave) ·t av Fig 15. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014 AUIRFP4110 25 20 TJ = 25°C TJ = 125°C 3.0 2.5 ID = 250µA 2.0 ID = 1.0mA ID = 1.0A 1.5 15 10 5 1.0 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 0 T J , Temperature ( °C ) 200 400 600 800 1000 diF /dt (A/µs) Fig 17. Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 560 25 IF = 45A V R = 85V 20 TJ = 25°C TJ = 125°C 15 QRR (A) IRR (A) IF = 30A V R = 85V 3.5 IRR (A) VGS(th) , Gate threshold Voltage (V) 4.0 10 480 IF = 30A V R = 85V 400 TJ = 25°C TJ = 125°C 320 240 5 160 80 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Stored Charge vs. dif/dt Fig 18. Typical Recovery Current vs. dif/dt QRR (A) 560 480 IF = 45A V R = 85V TJ = 25°C 400 TJ = 125°C 320 240 160 80 0 200 400 600 800 1000 diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014 AUIRFP4110 Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01 I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 24b. Gate Charge Waveform Submit Datasheet Feedback January 29, 2014 AUIRFP4110 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUFP4110 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX A= Automotive, LeadFree Lot Code TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014 AUIRFP4110 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. 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Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014