AP2605GY0-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic D ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package -30V RDS(ON) 80mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS -4A S S Description D AP2605 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercial-industrial applications. D G SOT-26 D D o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage + 20 V -4 A -3 A -20 A 2 W ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 62.5 ℃/W 1 201410061AP AP2605GY0-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -30 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-4A - - 80 mΩ VGS=-4.5V, ID=-3A - - 120 mΩ V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 gfs Forward Transconductance VDS=-10V, ID=-3A - 8.6 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-4A - 6.5 10.4 nC Qgs Gate-Source Charge VDS=-15V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC td(on) Turn-on Delay Time VDS=-15V - 8 - ns tr Rise Time ID=-1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 20 - ns tf Fall Time VGS=-10V - 7.5 - ns Ciss Input Capacitance VGS=0V - 550 - pF Coss Output Capacitance VDS=-15V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 8 16 Ω Min. Typ. IS=-1.6A, VGS=0V - - -1.2 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-4A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t < 5s ; 156℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2605GY0-HF 20 20 -ID , Drain Current (A) 16 -10V -7.0V -6.0V -5.0V V G = -4.0V 16 12 8 65mΩ 12 8 4 4 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 I D =-3A I D =-4.2A T A =25 o C o T A =25 C I D = -4A V GS = -10V 60 . Normalized RDS(ON) 1.6 70 RDS(ON) (mΩ ) -10V -7.0V -6.0V -5.0V V G = -4.0V TA=150oC -ID , Drain Current (A) T A =25 o C 1.4 1.2 1 50 0.8 40 0.6 0 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 4 I D = -250uA Normalized VGS(th) -IS(A) 3 2 T j =150 o C T j =25 o C 1 0.5 1 2.01E+08 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 T j , Junction Temperature ( 150 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2605GY0-HF -VGS , Gate to Source Voltage (V) 10 f=1.0MHz 800 I D = -4A V DS = -15V 8 600 C (pF) 65mΩ 6 C iss 400 4 200 2 C oss C rss 0 0 0 4 8 1 12 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 100us -ID (A) Operation in this area limited by RDS(ON) 1ms 1 . 10ms 100ms 0.1 1s o T A =25 C Single Pulse DC Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 156℃/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 5 16 V DS =-5V T j =150 o C -ID , Drain Current (A) -ID , Drain Current (A) 4 12 o T j =25 C o T j = -40 C 8 3 2 4 1 0 0 0 1 2 3 4 5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4 AP2605GY0-HF MARKING INFORMATION Part Number : Y5 Y5SS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5