GTM GSMBT4403 Pnp epitaxial planar transistor Datasheet

CORPORATION
G SM BT 4 4 0 3
ISSUED DATE :2004/12/20
REVISED DATE :
P NP EP ITAX I AL PL ANAR T RANSI STOR
Description
The GSMBT4403 is designed for general purpose switching and amplifier applications.
Features
Complementary to GSMBT4401
High DC Current Gain: 100-300 at 150mA
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Symbol
Ratings
Tj
+150
Unit
Storage Temperature
Collector to Base Voltage at Ta=25
Tstg
-55 ~ +150
VCBO
-40
V
Collector to Emitter Voltage at Ta=25
VCEO
-40
V
Emitter to Base Voltage at Ta=25
VEBO
-5
V
Collector Current at Ta=25
IC
-600
mA
Total Power Dissipation at Ta=25
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
-40
-
-
V
BVCEO
-40
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-10uA
ICEX
-
-
-100
nA
VCE=-35V, V BE=-0.4V
*VCE(sat)1
-
-
-400
mV
IC=-150mA, IB=-15mA
*VCE(sat)2
-
-
-750
mV
IC=-500mA, IB=-50mA
*VBE(sat)1
-
-
-950
mV
IC=-150mA, IB=-15mA
*VBE(sat)2
-
-
-1.3
V
IC=-500mA, IB=-50mA
*hFE1
30
-
-
*hFE2
60
-
-
VCE=-1V, IC=-1mA
*hFE3
100
-
-
VCE=-1V, IC=-10mA
*hFE4
100
-
300
VCE=-2V, IC=-150mA
IC=-100uA
VCE=-1V, IC=-0.1mA
*hFE5
20
-
-
fT
200
-
-
MHz
-
-
8.5
pF
Cob
Test Conditions
VCE=-2V, IC=-500mA
VCE=-10V, IC =-20mA, f=100MHz
VCE=-10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
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CORPORATION
ISSUED DATE :2004/12/20
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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