BUR52 HIGH CURRENT NPN SILICON TRANSISTORS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case, Intented for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB = 0) 250 V VCBO Collector-Base Voltage (IE = 0) 350 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current IC 60 ICM tp = (10 ms) 80 A COMSET SEMICONDUCTORS 1/4 BUR52 Symbol Ratings IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature Value Unit @ TC = 25° 16 A 350 Watts 200 °C -55 to +200 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Value Unit 0.5 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit ICEO Collector Cutoff Current VCE = 250 V ; (IB = 0) - - 1 mA IEBO Emitter Cutoff Current VBE = 7 V ; (IC = 0) - - 0.2 µA Collector Cutoff Current TCASE = 25°C ; VCB = 350 V ; (IE = 0) - - 0.2 TCASE = 125°C ; VC = 350 V ; (IE = 0) - - 2 ICBO mA VCEO(SUS) Collector-Emitter Sustaining IC = 200 A Voltage (*) 250 - - V VEBO Emitter-Base Voltage IC = 10 mA ; (IC = 0) 10 - - V Collector-Emitter saturation Voltage (*) IC = 25 A ; IB = 2 A - - 1 VCE(SAT) IC = 40 A ; IB = 4 A - 0.7 1.5 Base-Emitter saturation Voltage (*) IC = 25 A ; IB = 2 A - - 1.8 IC = 40 A ; IB = 4 A - 1.5 2 VBE(SAT) V V COMSET SEMICONDUCTORS 2/4 BUR52 Symbol hFE Ratings Test Condition(s) Min Typ Mx Unit VCE = 4 V ; IC = 5 A 20 - 100 VCE = 4 V ; IC = 40 A 15 - - - - A 10 16 MHz - 0.3 1 µs - 1.2 2 - DC Current Gain (*) Is/b Second Breakdown Collector Current VCE = 20 V ; t = 1 s 17.5 fT Transition - Frequency VCE = 5 V ; IC = 1 A ; f = 1 MHz - ton Turn-on time VCC = 100 V ; IC = 40 A ; IB1 = 4 A ts Storage Time ff VCC = 100 V ; IC = 40 A IB1= 4 A ; IB2 = -4 A Fall Time Clamped Es/b Collector Current Vclamp = 250 V ; L = 500 µH µs - 0.2 0.6 40 - - (*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 % COMSET SEMICONDUCTORS 3/4 A BUR52 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4