Comset BUR52 High current npn silicon transistor Datasheet

BUR52
HIGH CURRENT NPN SILICON TRANSISTORS
LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal case,
Intented for use in switching and linear applications in military and industrial equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage (IB = 0)
250
V
VCBO
Collector-Base Voltage (IE = 0)
350
V
VEBO
Emitter-Base Voltage (IC = 0)
10
V
IC
Collector Current
IC
60
ICM tp = (10 ms)
80
A
COMSET SEMICONDUCTORS
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BUR52
Symbol
Ratings
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
TS
Storage Temperature
Value
Unit
@ TC = 25°
16
A
350
Watts
200
°C
-55 to +200
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
0.5
°C/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
ICEO
Collector Cutoff Current
VCE = 250 V ; (IB = 0)
-
-
1
mA
IEBO
Emitter Cutoff Current
VBE = 7 V ; (IC = 0)
-
-
0.2
µA
Collector Cutoff Current
TCASE = 25°C ; VCB = 350 V ; (IE = 0)
-
-
0.2
TCASE = 125°C ; VC = 350 V ; (IE = 0)
-
-
2
ICBO
mA
VCEO(SUS)
Collector-Emitter Sustaining
IC = 200 A
Voltage (*)
250
-
-
V
VEBO
Emitter-Base Voltage
IC = 10 mA ; (IC = 0)
10
-
-
V
Collector-Emitter saturation
Voltage (*)
IC = 25 A ; IB = 2 A
-
-
1
VCE(SAT)
IC = 40 A ; IB = 4 A
-
0.7
1.5
Base-Emitter saturation
Voltage (*)
IC = 25 A ; IB = 2 A
-
-
1.8
IC = 40 A ; IB = 4 A
-
1.5
2
VBE(SAT)
V
V
COMSET SEMICONDUCTORS
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BUR52
Symbol
hFE
Ratings
Test Condition(s)
Min Typ Mx Unit
VCE = 4 V ; IC = 5 A
20
-
100
VCE = 4 V ; IC = 40 A
15
-
-
-
-
A
10
16
MHz
-
0.3
1
µs
-
1.2
2
-
DC Current Gain (*)
Is/b
Second Breakdown
Collector Current
VCE = 20 V ; t = 1 s
17.5
fT
Transition - Frequency
VCE = 5 V ; IC = 1 A ; f = 1 MHz
-
ton
Turn-on time
VCC = 100 V ; IC = 40 A ; IB1 = 4 A
ts
Storage Time
ff
VCC = 100 V ; IC = 40 A
IB1= 4 A ; IB2 = -4 A
Fall Time
Clamped Es/b Collector
Current
Vclamp = 250 V ; L = 500 µH
µs
-
0.2
0.6
40
-
-
(*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 %
COMSET SEMICONDUCTORS
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A
BUR52
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice
COMSET SEMICONDUCTORS
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