Cypress CY7C1021B 1-mbit (64k x 16) static ram Datasheet

CY7C1021B
1-Mbit (64K x 16) Static RAM
Features
automatic power-down feature that significantly reduces
power consumption when deselected.
• Temperature Ranges
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is
written into the location specified on the address pins (A0
through A15). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O9 through I/O16) is written into the location
specified on the address pins (A0 through A15).
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
• High speed
— tAA = 12 ns (Commercial & Industrial)
— tAA = 15 ns (Automotive)
• CMOS for optimum speed/power
• Low active power
— 770 mW (max.)
• Automatic power-down when deselected
• Independent control of upper and lower bits
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O9 to I/O16. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
Functional Description[1]
The input/output pins (I/O1 through I/O16) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1021B is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
The CY7C1021B is available in standard 44-pin TSOP Type II
and 44-pin 400-mil-wide SOJ packages.
• Available in Pb-free and non Pb-free 44-pin TSOP II and
44-pin 400-mil-wide SOJ
Logic Block Diagram
64K x 16
RAM Array
512 X 2048
SENSE AMPS
A7
A6
A5
A4
A3
A2
A1
A0
ROW DECODER
DATA IN DRIVERS
I/O1–I/O8
I/O9–I/O16
COLUMN DECODER
A8
A9
A10
A11
A12
A13
A14
A15
BHE
WE
CE
OE
BLE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05145 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 28, 2006
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CY7C1021B
Selection Guide
-12
Maximum Access Time (ns)
Maximum Operating Current (mA)
Com’l/Ind’l
Maximum CMOS Standby Current (mA)
Com’l/Ind’l
-15
12
15
140
130
Automotive
130
10
10
0.5
0.5
Automotive
15
L Version
Pin Configurations
SOJ/TSOP II
Top View
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
1
44
2
3
43
42
4
41
40
39
38
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
Pin Definitions
Pin Name
SOJ, TSOP–Pin Number
I/O Type
A0–A15
1–5,18–21, 24–27, 42–44
Input
I/O1–I/O16
7–10, 13–16, 29–32,
35–38
NC
22, 23, 28
WE
17
Input/Control Write Enable Input, active LOW. When selected LOW, a Write is
conducted. When deselected HIGH, a Read is conducted.
CE
6
Input/Control Chip Enable Input, active LOW. When LOW, selects the chip. When
HIGH, deselects the chip.
BHE, BLE
40, 39
OE
41
VSS
12, 34
VCC
11, 33
Document #: 38-05145 Rev. *C
Description
Address Inputs used to select one of the address locations.
Input/Output Bidirectional Data I/O lines. Used as input or output lines depending
on operation.
No Connect
No Connects. Not connected to the die.
Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O16–I/O9,
BLE controls I/O8–I/O1.
Input/Control Output Enable, active LOW. Controls the direction of the I/O pins.
When LOW, the I/O pins are allowed to behave as outputs. When
deasserted HIGH, I/O pins are tri-stated, and act as input data pins.
Ground
Ground for the device. Should be connected to ground of the
system.
Power Supply Power Supply inputs to the device.
Page 2 of 10
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CY7C1021B
Maximum Ratings
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Latch-Up Current ..................................................... >200 mA
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Range
Ambient
Temperature (TA)[3]
VCC
0°C to +70°C
5V ± 10%
Supply Voltage on VCC Relative to GND[2] .... –0.5V to +7.0V
Commercial
DC Voltage Applied to Outputs
in High Z State[2] ......................................–0.5V to VCC+0.5V
Industrial
–40°C to +85°C
5V ± 10%
Automotive
–40°C to +125°C
5V ± 10%
DC Input Voltage[2] ...................................–0.5V to VCC+0.5V
Current into Outputs (LOW) .........................................20 mA
Electrical Characteristics Over the Operating Range
Parameter
-12
Test
Conditions
Description
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
Min.
-15
Max.
2.4
Voltage[2]
Input LOW
IIX
Input Leakage Current
GND < VI < VCC
Com’l/Ind’l
IOZ
Output Leakage Current
GND < VI < VCC,
Output Disabled
Com’l/Ind’l
Max.
Unit
2.4
0.4
VIL
V
0.4
V
2.2
6.0
2.2
6.0
V
–0.5
0.8
–0.5
0.8
V
–1
+1
–1
+1
µA
–4
+4
µA
–1
+1
–1
+1
µA
–4
+4
µA
130
mA
Auto
Auto
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA, Com’l/Ind’l
f = fMAX = 1/tRC
Auto
140
ISB1
Automatic CE
Power Down Current —TTL
Inputs
Max. VCC, CE > VIH
Com’l/Ind’l
VIN > VIH or VIN < VIL, f =
Auto
fMAX
40
Automatic CE
Power Down Current
—CMOS Inputs
Max. VCC, CE > VCC –
0.3V, VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
10
ISB2
Min.
Com’l/Ind’l
Auto
L Version
0.5
130
mA
40
mA
50
mA
10
mA
15
mA
0.5
mA
Capacitance[4]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Unit
8
pF
8
pF
Thermal Resistance[4]
Parameter
ΘJA
ΘJC
Description
Test Conditions
Thermal Resistance Test conditions follow standard test methods and
(Junction to Ambient) procedures for measuring thermal impedance,
Thermal Resistance per EIA/JESD51.
44-pin SOJ
44-pin
TSOP-II
Unit
64.32
76.89
°C/W
31.03
14.28
°C/W
(Junction to Case)
Notes:
2. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5V for pulse durations of less than 20 ns.
3. TA is the “Instant On” case temperature.
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05145 Rev. *C
Page 3 of 10
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CY7C1021B
AC Test Loads and Waveforms
R 481Ω
5V
R 481Ω
5V
OUTPUT
ALL INPUT PULSES
3.0V
90%
OUTPUT
30 pF
R2
255Ω
R2
255Ω
5 pF
INCLUDING
JIG AND
SCOPE
(a)
INCLUDING
JIG AND
SCOPE
(b)
OUTPUT
Equivalent to: THÉVENIN
EQUIVALENT
167
90%
10%
10%
GND
Rise Time: 1 V/ns
Fall Time: 1 V/ns
1.73V
30 pF
Switching CharacteristicsOver the Operating Range[5]
7C1021B-12
Parameter
Description
Min.
Max.
7C1021B-15
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
tDOE
OE LOW to Data Valid
12
Z[6]
tLZOE
OE LOW to Low
tHZOE
OE HIGH to High Z[6, 7]
tLZCE
CE LOW to Low
Z[6]
tHZCE
CE HIGH to High
CE LOW to Power-Up
tPD
CE HIGH to Power-Down
tDBE
Byte Enable to Data Valid
tLZBE
Byte Enable to Low Z
tHZBE
Write
12
ns
12
15
ns
6
7
ns
3
0
ns
0
6
3
ns
7
3
6
0
7
7
0
6
ns
ns
15
6
0
ns
ns
0
12
Byte Disable to High Z
ns
15
3
Z[6, 7]
tPU
15
ns
ns
ns
7
ns
Cycle[8]
tWC
Write Cycle Time
12
15
ns
tSCE
CE LOW to Write End
9
10
ns
tAW
Address Set-Up to Write End
8
10
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tSD
Data Set-Up to Write End
6
8
ns
tHD
Data Hold from Write End
0
0
ns
tLZWE
WE HIGH to Low Z[6]
3
3
ns
tHZWE
WE LOW to High Z[6, 7]
tBW
Byte Enable to End of Write
6
8
7
9
ns
ns
Notes:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write, and
the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
Document #: 38-05145 Rev. *C
Page 4 of 10
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CY7C1021B
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[10, 11]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
BHE, BLE
tLZOE
tHZCE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
tHZBE
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
50%
IICC
CC
50%
IISB
SB
Notes:
9. Device is continuously selected. OE, CE, BHE and/or BHE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05145 Rev. *C
Page 5 of 10
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CY7C1021B
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)[12, 13]
tWC
ADDRESS
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tBW
BHE, BLE
tSD
tHD
DATA I/O
Write Cycle No. 2 (BLE or BHE Controlled)
tWC
ADDRESS
BHE, BLE
tSA
tBW
tAW
tHA
tPWE
WE
tSCE
CE
tSD
tHD
DATA I/O
Notes:
12. Data I/O is high impedance if OE or BHE and/or BLE= VIH.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05145 Rev. *C
Page 6 of 10
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CY7C1021B
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE, BLE
tHZWE
tSD
tHD
DATA I/O
tLZWE
Truth Table
CE
OE
WE
H
X
X
X
X
High Z
High Z
Power-Down
Standby (ISB)
L
L
H
L
L
Data Out
Data Out
Read - All bits
Active (ICC)
L
H
Data Out
High Z
Read - Lower bits only
Active (ICC)
L
X
L
BLE
BHE
I/O1–I/O8
I/O9–I/O16
Mode
Power
H
L
High Z
Data Out
Read - Upper bits only
Active (ICC)
L
L
Data In
Data In
Write - All bits
Active (ICC)
L
H
Data In
High Z
Write - Lower bits only
Active (ICC)
H
L
High Z
Data In
Write - Upper bits only
Active (ICC)
L
H
H
X
X
High Z
High Z
Selected, Outputs Disabled
Active (ICC)
L
X
X
H
H
High Z
High Z
Selected, Outputs Disabled
Active (ICC)
Ordering Information
Speed
(ns)
12
Ordering Code
CY7C1021B-12VC
Package
Name
51-85082
CY7C1021B-12VXC
CY7C1021B-12ZC
CY7C1021B-12VXI
Document #: 38-05145 Rev. *C
44-pin (400-Mil) Molded SOJ
Operating
Range
Commercial
44-pin (400-Mil) Molded SOJ (Pb-Free)
51-85087
CY7C1021B-12ZXC
CY7C1021B-12VI
Package Type
44-pin TSOP Type II
44-pin TSOP Type II (Pb-Free)
51-85082
44-pin (400-Mil) Molded SOJ
Industrial
44-pin (400-Mil) Molded SOJ (Pb-Free)
Page 7 of 10
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CY7C1021B
Ordering Information (continued)
Speed
(ns)
Package
Name
Ordering Code
15
CY7C1021B-15VC
51-85082
CY7C1021B-15VXC
Operating
Range
Package Type
44-pin (400-Mil) Molded SOJ
Commercial
44-pin (400-Mil) Molded SOJ (Pb-Free)
CY7C1021B-15ZC
51-85087
CY7C1021B-15ZXC
44-pin TSOP Type II
44-pin TSOP Type II (Pb-Free)
CY7C1021B-15VI
51-85082
CY7C1021B-15VXI
44-pin (400-Mil) Molded SOJ
Industrial
44-pin (400-Mil) Molded SOJ (Pb-Free)
CY7C1021B-15ZI
51-85087
44-pin TSOP Type II
CY7C1021BL-15ZI
44-pin TSOP Type II
CY7C1021B-15ZXI
44-pin TSOP Type II (Pb-Free)
CY7C1021BL-15ZXI
44-pin TSOP Type II (Pb-Free)
CY7C1021B-15VE
51-85082
CY7C1021B-15VXE
44-pin (400-Mil) Molded SOJ
Automotive
44-pin (400-Mil) Molded SOJ (Pb-Free)
CY7C1021B-15ZE
51-85087
CY7C1021B-15ZSXE
44-pin TSOP Type II
44-pin TSOP Type II (Pb-Free)
Package Diagrams
44-pin (400-Mil) Molded SOJ (51-85082)
44
23
DIMENSIONS IN INCHES MIN.
MAX.
0.395
0.405
0.435
0.445
22
1
SEATING PLANE
1.120
1.130
0.095
0.115
0.045
MAX.
0.128
0.148
0.023
0.033
0.013
0.023
Document #: 38-05145 Rev. *C
0.082
MIN.
0.007
0.013
0.004
0.050
TYP.
0.025
MIN.
0.365
0.375
0°-10°
51-85082-*B
Page 8 of 10
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CY7C1021B
Package Diagrams (continued)
44-Pin TSOP II (51-85087)
51-85087-*A
All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05145 Rev. *C
Page 9 of 10
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1021B
Document History Page
Document Title: CY7C1021B 1-Mbit (64K x 16) Static RAM
Document Number: 38-05145
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
109889
09/22/01
SZV
Change from Spec number: 38-00951 to 38-05145
*A
238454
See ECN
RKF
1) Added Automotive Specs to Data Sheet
2) Added Pb-Free device offering in the Ordering Information
*B
361795
See ECN
SYT
Added Pb-Free offerings in the Ordering Information
*C
505726
See ECN
NXR
Removed CY7C10211B from Product offering
Changed the description of IIX from Input Load Current to
Input Leakage Current in DC Electrical Characteristics table
Changed teh ICC Max value from 150 mA to 130 mA
Removed IOS parameter from DC Electrical Characteristics table
Updated Ordering Information Table
Document #: 38-05145 Rev. *C
Page 10 of 10
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