Data Sheet HAT2202C R07DS1179EJ0700 (Previous: REJ03G1236-0600) Rev.7.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 DD D D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 Ratings 20 ±12 3 12 Unit V V A A IDR PchNote 2 Tch Tstg 3 900 150 –55 to +150 A mW °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) R07DS1179EJ0700 Rev.7.00 Mar 19, 2014 Page 1 of 6 HAT2202C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) Min 20 ±12 — — 0.4 — — 6.5 — — — — — — — — — Typ — — — — — 31 43 9.5 520 115 60 6 1 1.4 9 8 28 Max — — ±10 1 1.4 40 55 — — — — — — — — — — Unit V V μA μA V mΩ mΩ S pF pF pF nC nC nC ns ns ns tf VDF — — 6 0.8 — 1.1 ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ± 10V, VDS = 0 VDS = 20 V, VGS = 0 ID = 10 V, ID = 1 mA ID = 1.5 A, VGS =4.5 V Note3 ID = 1.5 A, VGS = 2.5 V Note3 ID = 1.5 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 3 A ID = 1.5 A, VGS = 10 V, VDD =10 V, RL= 6.7 Ω, Rg = 4.7 Ω IF = 3 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS1179EJ0700 Rev.7.00 Mar 19, 2014 Page 2 of 6 HAT2202C Main Characteristics Power vs. Temperature Derating 100 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Ta = 25°C,1shot pulse When using the FR4 board. PW = 100 μs 1.2 = 1 m s 10 s m n Operation in this area is limited by RDS(on) t io ra 0.1 pe 0.3 0.03 0 50 100 150 Ambient Temperature 200 0.01 0.03 0.1 0.3 20 20 Pulse Test 4.5 V 2.5 V 2.0 V 12 1.8 V 8 1.6 V 4 10 30 100 VDS = 10 V Pulse Test 16 12 8 4 1.4 V VGS = 1.2 V 3 Typical Transfer Characteristics Drain Current ID (A) 16 1 Drain to Source Voltage VDS (V) Ta (°C) Typical Output Characteristics Drain Current ID (A) PW 1 O 0.4 3 = 0.8 10 PW Drain Current ID (A) 30 PW =10 μs C D Channel Dissipation Pch (W) 1.6 Maximum Safe Operation Area 75°C 25°C Tc = –25°C 2 4 6 8 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 160 Pulse Test 120 3A 80 1.5 A 40 ID = 1 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) R07DS1179EJ0700 Rev.7.00 Mar 19, 2014 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 1000 Pulse Test 100 2.5 V VGS = 4.5 V 10 0.1 1 10 100 Drain Current ID (A) Page 3 of 6 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2202C 75 3A 60 ID = 1, 1.5 A VGS = 2.5 V 45 1, 1.5 ,3 A 30 4.5 V 15 0 –25 Pulse Test 0 25 50 75 Case Temperature 100 125 150 Tc 100 30 25°C Tc = –25°C 10 75°C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 Typical Capacitance vs. Drain to Source Voltage VGS VDD = 5 V 10 V 20 V VDD 4 10 0 6 2 VDD = 20 V 10 V 5V 2 4 6 8 0 10 1000 Ciss Capacitance C (pF) 8 ID = 3 A Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 40 20 300 Coss 100 Crss 30 VGS = 0 f = 1 MHz 10 0 10 5 20 15 25 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 20 100 tr Switching Time t (ns) Reverse Drain Current IDR (A) 10 Drain Current ID (A) (°C) Dynamic Input Characteristics 30 3 1 16 5V VGS = 0 V 12 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS1179EJ0700 Rev.7.00 Mar 19, 2014 td(off) td(on) 10 tf 1 0.1 VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 100 Drain Current ID (A) Page 4 of 6 HAT2202C Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 4.7 Ω Vin 10 V Vin Vout VDD = 10 V 10% 10% 90% td(on) R07DS1179EJ0700 Rev.7.00 Mar 19, 2014 10% tr 90% td(off) tf Page 5 of 6 HAT2202C Package Dimensions JEITA Package Code ⎯ Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A e A2 Reference Symbol A A1 y S S e1 b l1 b1 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b1 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.3 1.9 0.4 Ordering Information Orderable Part Number HAT2202C-EL-E R07DS1179EJ0700 Rev.7.00 Mar 19, 2014 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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