UTC MMBTA94 High voltage transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTA94
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
3
*Collector-Emitter voltage: VCEO=-400V
*Collector Dissipation: PC(MAX)=350mW
*Low collector-Emitter saturation voltage
APPLICATIONS
1
2
*Telephone switching
*High voltage switch
SOT-23
*Pb-free plating product number: MMBTA94L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTA94-AE3-R
MMBTA94L-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBTA94L-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
4D
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-008,B
MMBTA94
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (Ta=25°C)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
PC
IC
TJ
TSTG
RATING
-400
-400
-6
350
-300
+150
-40~+150
UNIT
V
V
V
mW
mA
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO Ic=-100µA,IE=0
Collector-Emitter Breakdown Voltage
BVCEO Ic=-1mA,IB=0
Collector-Emitter Breakdown Voltage
BVCES Ic=-100µA,VBE=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100µA,Ic=0
Collector Cut-off Current
ICBO
VCB=-300V,IE=0
Collector Cut-off Current
ICES
VCB=-400V,VBE=0
Emitter Cut-off Current
IEBO
VEB=-4V,IC=0
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
DC Current Gain (note)
hFE
VCE=-10V,IC=-50mA
VCE=-10V,IC=-100mA
IC=-10mA,IB=-1mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-50mA,IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-10mA,IB=-1mA
Output Capacitance
Cob
VCB=-20V,IE=0, f=1MHz
Note: Pulse test: PW<300µs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-400
-400
-400
-5
60
70
70
40
TYP
MAX UNIT
V
V
V
V
-100 nA
-1
µA
100
nA
300
-0.20
-0.5
-0.75
7
V
V
pF
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QW-R206-008,B
MMBTA94
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
Base-Emitter Saturation Voltage
-10
1000
10
-0.1
-0.01
1
-1
-10
-100
-1000
-1
-10
-100
-1000
Ic, Collector Current (mA)
Collector-Emitter Saturation Voltage
Collector Output capacitance
Ic=10*IB
-1.0
-0.1
-0.01
Collector Output Capacitance (pF)
Ic, Collector Current (mA)
-10
VCE(SAT) (V)
Ic=10*IB
-1.0
100
VBE(SAT) (V)
hFE,DC Current Gain
VCE=-10V
1000
IE=0,f=1MHz
100
10
1
-1
-10
-100
Ic, Collector Current (mA)
-0.1
-1
-10
-100
Collector Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-008,B
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