Transistors SMD Type PNP Transistors BCW68 (KCW68) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features three groups F, G and H according to its DC current gain. 1 0.55 +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● Complementary to BCW66, BCW68 is subdivided into 2 +0.02 0.15 -0.02 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -800 mA Collector Power Dissipation PC 330 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BCW68 (KCW68) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -45 V , IE=0 -20 Emitter cut-off current IEBO VEB= -4V , IC=0 -20 IC=-100 mA, IB=-10mA -0.3 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) -0.7 IC=-100 mA, IB=-10mA -1.25 IC=-500 mA, IB=-50mA -2 VCE= -10V, IC= -0.1mA VCE= -1V, IC= -10mA hFE(2) DC current gain VCE= -1V, IC= -100mA hFE(3) VCE= -2V, IC= -500mA hFE(4) F 35 G 50 H 80 F 75 G 120 H 180 F 100 250 G 160 400 H 250 630 F 35 G 60 H 100 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 6 Collector input capacitance Cib VEB= -0.5V, IE= 0,f=1MHz 60 Transition frequency fT VCE= -5V, IC= -50mA,f=20MHz 200 ■ Classification of hfe(3) Type BCW68F BCW68G BCW68H Range 100-250 160-400 250-630 Marking DF DG DH www.kexin.com.cn Unit V IC=-500 mA, IB=-50mA hFE(1) 2 Min nA V pF MHz Transistors SMD Type PNP Transistors BCW68 (KCW68) ■ Typical Characterisitics Static Characteristic -720uA -800uA COMMON EMITTER Ta=25℃ -560uA -640uA DC CURRENT GAIN COLLECTOR CURRENT o -400uA -200 -320uA -150 -240uA -100 -160uA -50 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE -7 -8 -0.1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) o Ta=25 C 300 -1 Ta=25℃ -0.6 Ta=100℃ IC -100 -800 (mA) IC β=10 -400 -300 -200 Ta=100℃ -100 -0.2 -10 COLLECTOR CURRENT VCEsat —— -500 -1.0 -0.4 400 (V) β=10 -0.8 500 100 VBEsat —— IC -1.2 Ta=100 C 600 200 IB=-80uA -0 COMMON EMITTER VCE=-1V 700 -480uA -250 IC (mA) -300 hFE —— IC 800 hFE -350 Ta=25℃ -0.0 -0.1 -1 -10 -100 COLLECTOR CURRENT fT —— -800 (mA) IC 100 -10 Cob / Cib —— (mA) VCB / VEB f=1MHz IE=0 / IC=0 o (pF) Ta=25 C C 200 -800 -100 IC Cib 250 CAPACITANCE TRANSITION FREQUENCY -1 COLLECTOR CURRENT fT (MHz) 300 IC -0 -0.1 150 100 10 Cob COMMON EMITTER VCE=-5V 50 o Ta=25 C 0 -1 -10 -100 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 0.4 —— IC (mA) 1 -0.1 -1 REVERSE VOLTAGE V (V) -10 -20 Ta 0.33 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) www.kexin.com.cn 3