DATA SHEET THYRISTORS AC10DSMA,AC10FSMA 10 A RESIN INSULATION TYPE TRIAC DESCRIPTION PACKAGE DRAWING (Unit: mm) The AC10DSMA and AC10FSMA are resin insulation type 4.7 MAX. 10.5 MAX. TRIACs with an effective current of 10 A (TC = 85°C). 7 ±0.2 φ 3.2 ±0.2 2.8 ±0.2 1 These products features ratings and electrical characteristics 2 3 5 ±0.2 equal to TO-220AB package TRIAC and a high reliability design. FEATURES • Insulation type TRIAC fully covered with resin on the entire case other than electrode leads • Insulation voltage and conduction equal to conventional mica 12 ±0.2 mounting. 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.54 TYP. and polyester film 0.5 ±0.1 2.5 ±0.1 TRIAC 1: T1 2: T2 3: Gate • Can be replaced with TO-220AB package • High allowable on-current when using a single unit *: TC test bench-mark APPLICATIONS * 13.5 MIN. mounting on a heatsink board or performing high-density 17 ±0.2 and are electrically insulated with electrodes, giving them a considerable advantage over conventional TRIACs when 3.0 MAX. 5 ±0.1 These products are covered with resin mold on the entire case Standard weight: 2 g Non-contact switches of motor speed control, heater temperature control, lamp light control The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13661EJ4V0DS00 (4th edition) Date Published June 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2002 AC10DSMA,AC10FSMA MAXIMUM RATINGS Parameter Symbol AC10DSMA AC10FSMA Unit Remarks Non-repetitive Peak Off-state Voltage VDSM 500 700 V − Repetitive Peak Off-state Voltage VDRM 400 600 V − Effective On-state Current IT(RMS) 10 (TC = 85°C) A Refer to Figure 11 and 12. ITSM 80 (50 Hz 1 cycle) A Refer to Figure 2. Surge On-state Current 88 (60 Hz 1 cycle) Fusing Current ∫ iT2dt 28 (1 ms ≤ t ≤ 10 ms) As 2 − Critical Rate Rise of On-state Current dIT/dt 50 A/µs − PGM 5.0 (f ≥ 50 Hz, Duty ≤ 10%) W − PG(AV) 0.5 W − Peak Gate Current IGM ±3 (f ≥ 50 Hz, Duty ≤ 10%) A − Junction Temperature Tj −40～+125 °C − Storage Temperature Tstg −55～+150 °C − Peak Gate Power Dissipation Average Gate Power Dissipation ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Repetitive Peak Off-state Current On-state Voltage IDRM VTM Gate Trigger Current TYP. MAX. Unit Remarks Tj = 25°C − − 100 µA − Tj = 125°C − − 2 mA − − − 1.3 V Refer to Figure 1. mA Refer to Figure 4. V Refer to Figure 4. ITM = 10 A T2+, G+ − − 20 RL = 30 Ω T2−, G+ − − − III T2−, G− − − 20 IV T2+, G− − − 20 VDM = 12 V, T2+, G+ − − 1.5 RL = 30 Ω T2−, G+ − − − III T2−, G− − − 1.5 IV T2+, G− − − 1.5 0.3 − − V − − 30 − mA − − 100 − V/µs − 10 − − V/µs − − − 3.5 IGT Mode I VGT II Gate Non-trigger Voltage Holding Current VGD IH Critical Rate Rise of Off-state Voltage Commutating Critical Rate Rise of dv/dt Tj = 125°C, VDM = 1 VDRM 2 VDM = 24 V, ITM = 10 A Tj = 125°C, VDM 2 = 3 VDRM (dv/dt)c Tj = 125°C, (diT/dt)c = −5 A/ms, VD = 400 V Off-state Voltage Thermal Resistance VDM = VDRM MIN. VDM = 12 V, Mode I II Gate Trigger Voltage Conditions Note Rth(j-c) Junction-to-case AC °C/W Refer to Figure 13. Note The thermal resistance with a 50 Hz or 60 Hz sine wave current, as shown in the following expression: Rth(j-c) = Tj (max) − TC PT ( AV ) Tj(max): Maximum junction temperature TC: Case temperature PT(AV): Average on-dissipation 2 Data Sheet D13661EJ4V0DS AC10DSMA,AC10FSMA TYPICAL CHARACTERISTICS Figure 1. iT vs. νT CHARACTERISTIC 100 Figure 2. ITSM RATING MAX. ITSM - Surge On-state Current - A iT - On-state Current - A Initial Tj = 125˚C 140 50 10 TC = 125˚C 5 25˚C 1.0 0.5 0.1 ITSM 0 120 100 80 60 Hz 60 50 Hz 40 20 0 0 1 2 3 4 5 1 5 νT - On-state Voltage - V Figure 3. GATE RATING VGT - Gate Trigger Voltage - V VG - Gate Voltage - V 8 6 PGM = 5 W f ≥ 50 Hz Duty ≤ 10% 4 PG(AV) = 0.5 W 0 0.5 1.0 1.5 2.0 2.5 1.5 25˚C −40˚C 125˚C 1.0 0.5 0 3.0 0 10 40 10 Mode I, III, IV 1.4 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA 100 1.2 1.0 0.8 0.6 0.4 0.2 1 0 80 30 Figure 6. VGT vs. TA CHARACTERISTIC Mode I, III, IV 40 20 IGT - Gate Trigger Current - mA Figure 5. IGT vs. TA CHARACTERISTIC 1000 0 100 Mode I, III, IV IG - Gate Current - A −40 50 Figure 4. GATE CHARACTERISTIC 2.0 Tj = −40 to +125˚C 0 10 Cycles - N 10 2 2π π N=1 120 TA - Ambient Temperature - °C −40 0 40 80 120 TA - Ambient Temperature - °C Data Sheet D13661EJ4V0DS 3 AC10DSMA,AC10FSMA Figure 7. iGT vs. τ CHARACTERISTIC Figure 8. νGT vs. τ CHARACTERISTIC 5 Mode I, III, IV TA = 25˚C 1000 100 10 νGT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA 10000 1 Mode I, III, IV TA = 25˚C 4 3 2 1 0 1 10 100 1000 1 10 τ - Pulse Width - µs Figure 10. PT(AV) vs. IT(RMS) CHARACTERISTIC IH - Holding Current - mA 100 10 0 20 40 60 80 100 120 TA - Ambient Temperature - °C PT(AV) - On-state Average Power Dissipation - W Figure 9. IH vs. TA CHARACTERISTIC −20 12 11 10 9 8 7 6 5 4 3 2 1 0 0 2 3 4 5 6 7 8 9 10 11 12 Figure 12. TA vs. IT(RMS) RATING 140 140 TA - Ambient Temperature - °C TC - Case Temperature - °C 1 IT(RMS) - Effective On-state Current - A Figure 11. TC vs. IT(RMS) RATING 120 100 80 60 40 20 120 100 80 60 40 20 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 IT(RMS) - Effective On-state Current - A 4 1000 τ - Pulse Width - µs 1000 1 100 0 1.0 2.0 IT(RMS) - Effective On-state Current - A Data Sheet D13661EJ4V0DS AC10DSMA,AC10FSMA Figure 13. Zth CHARACTERISTIC Zth - Transient Thermal Impedance - °C/W 100 Junction to ambient 10 Junction to case 1 0.1 0.1 1 10 100 1k 10 k 100 k Cycles (50 Hz) Data Sheet D13661EJ4V0DS 5 AC10DSMA,AC10FSMA • The information in this document is current as of June, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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