ON NTF2955 Power mosfet Datasheet

NTF2955
Power MOSFET
−60 V, −2.6 A, Single P−Channel SOT−223
Features
• TMOS7 Design for low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes
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Applications
•
•
•
•
Power Supplies
PWM Motor Control
Converters
Power Management
V(BR)DSS
RDS(on) TYP
ID MAX
−60 V
145 m @ −10 V
−2.6 A
P−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
ID
−2.6
A
Parameter
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
G
S
−2.0
4
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
W
2.3
1
2
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 3
2955
LWW
3
Continuous Drain
Current (Note 2)
Steady
State
Power Dissipation
(Note 2)
TA = 25°C
ID
TA = 85°C
TA = 25°C
A
−1.7
−1.3
PD
1.0
W
IDM
−10.4
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 )
EAS
225
mJ
TL
260
°C
Pulsed Drain Current
tp = 10 s
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
2955
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
4 Drain
1
Gate
2
Drain
3
Source
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Tab (Drain) − Steady State (Note 2)
RJC
14
°C/W
Junction−to−Ambient − Steady State (Note 1)
RJA
Junction−to−Ambient − Steady State (Note 2)
RJA
Device
Package
Shipping†
65
NTF2955T1
SOT−223
1000/Tape & Reel
150
NTF2955T3
SOT−223
4000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.127 in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 1
ORDERING INFORMATION
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTF2955/D
NTF2955
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 A
−60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
V
66.4
VGS = 0 V,
VDS = −60
60 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−50
IGSS
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −1.0 mA
Drain−to−Source On Resistance
RDS(on)
( )
VGS = −10 V, ID = −0.75 A
A
±100
nA
−4.0
V
145
170
mΩ
VGS = −10 V, ID = −1.5 A
150
180
VGS = −10 V, ID = −2.4 A
154
185
gFS
VGS = −15 V, ID = −0.75 A
1.77
S
Input Capacitance
CISS
492
pF
Output Capacitance
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Reverse Transfer Capacitance
CRSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Forward Transconductance
−2.0
CHARGES AND CAPACITANCES
165
50
VGS = 10 V, VDS = 30 V,
ID = 1
1.5
5A
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
2.3
Gate−to−Drain Charge
QGD
5.2
nC
14.3
1.2
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 10 V, VDD = 25 V,
ID = 1
1.5
5 A,
A RG = 9
9.1
1Ω
RL = 25 Ω
ns
11
7.6
td(OFF)
65
tf
38
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
−1.10
TJ = 125°C
−0.9
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 1
1.5
5A
−1.30
V
36
VGS = 0 V, dIS/dt = 100 A/s,
IS = 1.5 A
QRR
20
16
0.139
3. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTF2955
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
VGS = −6 V
VGS = −10 V to −7 V
8
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
TJ = 25 °C
VGS = −5.5 V
6
VGS = −5 V
4
VGS = −4.5 V
2
VDS ≥ 10 V
TJ = −55°C
TJ = 25°C
8
TJ = 125°C
6
4
2
VGS = −3.8 V
0
0
0
1
2
3
4
5
6
7
8
9
10
2
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8
10
0.4
VGS = −10 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
Figure 2. Transfer Characteristics
0.25
TJ = 25°C
0.225
0.3
TJ = 125°C
0.2
0.175
0.2
TJ = 25°C
VGS = −10 V
0.15
VGS = −15 V
0.125
TJ = −55°C
0.1
0.075
0
2
0
4
8
6
10
0
6
4
2
8
10
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
2
1.8
0.05
−ID, DRAIN CURRENT (AMPS)
ID = −1.5 A
VGS = −10 V
VGS = 0 V
TJ = 150°C
1.6
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
Figure 1. On−Region Characteristics
0.1
6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.4
1.2
1
0.8
0.6
0.4
100
TJ = 125°C
0.2
0
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
55
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
NTF2955
Ciss
C, CAPACITANCE (pF)
1000
QT
10
800
Crss
600
Ciss
400
Coss
200
Crss
0
10
60
12
TJ = 25°C
VGS = 0 V
VDS = 0 V
5
0
−VGS
5
10
15
20
25
8
QGS
30
20
4
VDS
2
0
16
0
0
2
−VDS
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
14
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
5
1000
−IS, SOURCE CURRENT (AMPS)
VDD = −25 V
ID = −1.5 A
VGS = −10 V
t, TIME (ns)
10
ID = −1.5 A
TJ = 25°C
Figure 7. Capacitance Variation
100
td(off)
tf
td(on)
10
tr
1
10
3
2
1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
VGS = −20 V
SINGLE PULSE
TC = 25°C
10 µs
100 µs
1 ms
10 ms
1
dc
0.01
0.1
4
RG, GATE RESISTANCE (Ω)
10
0.1
VGS = 0 V
TJ = 25°C
0
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
100
−ID, DRAIN CURRENT (AMPS)
40
VGS
QGD
6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
50
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1200
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
250
IPK = −6.7 A
200
150
100
50
0
25
50
75
100
125
150
175
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF2955
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
F
4
S
1
2
B
3
D
L
G
J
C
0.08 (0003)
M
H
K
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
2.0
0.079
1.5
0.059
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5
6.3
0.248
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
NTF2955
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NTF2955/D