MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P8 1 Absolute Maximum Ratings (Ta = 25°C) TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage VCEO 3 V Emitter-Base voltage VEBO 1.2 V Collector-Current IC 20 mA Base-Current IB 10 mA Collector Power dissipation PC 60 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature Range 0.8±0.05 1. Collector 2. Emitter 3. Base 4. Emitter 2 Characteristics 2 0.52±0.05 4 0.12±0.05 Marking 1 High Gain:|S21e|2=16.0dB (@f=2GHz) 4 • 1.2±0.05 Low Noise Figure :NF=0.58dB (@f=2GHz) 3 0.9±0.05 • JEDEC JEITA TOSHIBA Weight: 0.0015 g 2-1G1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 MT4S102T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Noise Figure Symbol Test Condition Min Typ. Max Unit VCE=2V, IC=15mA, f=2GHz 21 25 ⎯ GHz 2 VCE=2V, IC=15mA, f=2GHz 13.5 16.0 ⎯ dB 2 VCE=2V, IC=15mA, f=5.2GHz ⎯ 9.0 ⎯ dB NF(1) VCE=2V, IC=10mA, f=2GHz ⎯ 0.58 0.85 dB NF(2) VCE=2V, IC=10mA, f=5.2GHz ⎯ 1.4 ⎯ dB Min Typ. Max Unit fT |S21e| (1) |S21e| (2) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector Cut-off Current ICBO VCB=6V, IE=0 ⎯ ⎯ 1 µA Emitter Cut-off Current IEBO VEB=1V, IC=0 ⎯ ⎯ 1 µA DC Current Gain hFE VCE=2V, IC=15mA 200 ⎯ 400 - Output Capacitance Cob VCB=2V, IE=0, f=1MHz ⎯ 0.43 0.6 pF Reverse Transfer Capacitance Cre VCB=2V, IE=0, f=1MHz (Note 1) ⎯ 0.17 0.25 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2007-11-01 MT4S102T IC-VCE 20 1000 COMMON EMITTER Ta=25℃ IB=70µA DC Current Gain hFE Collector-current IC(mA) 25 hFE-IC 60µA 50µA 15 40µA 10 30µA 20µA 5 10µA 4µA 0 0.0 1.0 2.0 3.0 100 10 0.1 4.0 Collector-Emitter voltage VCE(V) 25 COMMON EMITTER VCE=2V Ta=25℃ 1 0.1 0.01 0.001 0.2 0.4 100 VCE=2V 1V 20 15 10 5 f=1GHz Ta=25℃ 0 0.0 0.6 0.8 1.0 1 Base-Emitter voltage VBE(V) 10 100 Collector-current IC(mA) |S21e|2-IC fT-IC 20 35 Transition Frequency fT(GHz) VCE=2V Insertion Gain |S21e|2(dB) 10 |S21e|2-IC Insertion Gain |S21e|2(dB) Collector-current IC(mA) 10 1 Collector-current IC(mA) IC-VBE 100 COMMON EMITTER VCE=2V Ta=25℃ 1V 15 10 5 f=2GHz Ta=25℃ 0 1 10 100 30 VCE=2V 1V 25 20 15 10 f=2GHz Ta=25℃ 5 0 1 Collector-current IC(mA) 10 100 Collector-current IC(mA) 3 2007-11-01 MT4S102T NF,Ga-IC 0.4 Ga 1.6 Noise Figure NF(dB) 0.5 18 1.8 IE=0 f=1MHz Ta=25℃ Cob 0.3 0.2 Cre 0.1 1.4 14 1.2 12 1.0 10 0.8 0.1 1 0.6 VCE=2V f=2GHz Ta=25℃ 0.4 1 10 Collector-Base voltage VCB(V) 8 NF 0.2 0.0 16 10 6 4 Associated Gain Ga(dB) 0.6 Output Capacitance Cob(pF) Reverse Transfer Capacitance Cre(pF) Cre,Cob-VCB 2 100 Collector-current IC(mA) Collector Power dissipation PC(mW) PC-Ta 100 75 60 50 25 0 0 25 50 75 100 125 150 175 Ambient temperature Ta(℃) 4 2007-11-01 MT4S102T RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01