PD-94246C IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 5 TECHNOLOGY THRU-HOLE (MO-036AB) ® ™ Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si) 0.29Ω 300K Rads (Si) 0.29Ω 100K Rads (Si) 0.96Ω 300K Rads (Si) 0.96Ω ID CHANNEL 1.6A N 1.6A N -0.96A P -0.96A P International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. MO-036AB Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight ESD Rating: Class 1A per MIL-STD-750, Method 1020 Pre-Irradiation Absolute Maximum Ratings (Per Die) Parameter ID @ VGS =± 12V, TC = 25°C ID @ VGS =± 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight N-Channel P-Channel 1.6 1.0 6.4 1.4 0.011 ± 20 130 1.6 0.14 6.5 -0.96 -0.6 -3.84 1.4 Units A W W/°C V mJ A mJ 0.011 ± 20 200 -0.96 0.14 7.1 V/ns -55 to 150 °C 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) g For footnotes refer to the last page www.irf.com 1 07/07/15 IRHG567110 Pre-Irradiation Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage 100 ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions — — VGS = 0V, ID = 1.0mA — 0.14 — — — 0.29 2.0 1.0 — — — — — — 4.0 — 10 25 — — — — — — — — — — — — — — — — — — — 10 100 -100 17 4.4 3.9 21 16 30 15 — V V/°C Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 1.0A Ω V S nC VDS = VGS, ID = 1.0mA VDS =15V, IDS = 1.0A VDS= 80V, VGS= 0V VDS = 80V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =12V, ID = 1.6A, VDS = 50V ns VDD = 50V, ID = 1.6A, VGS =12V, RG = 7.5Ω µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 370 110 3.4 — — — VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 1.6 6.4 1.2 110 380 Test Conditions A V ns nC Tj = 25°C, IS = 1.6A, VGS = 0V Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs VDD ≤ 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 90 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHG567110 Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage -100 — — V — -0.14 — V/°C — — 0.96 -2.0 1.1 — — — — — — -4.0 — -10 -25 — — — — — — — — — — — — — — — — — — — 10 -100 100 13.4 3.7 3.0 21 17 40 90 — ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -0.6A Ω V S nC VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -0.6A VDS = -80V, VGS = 0V VDS = -80V, VGS = 0V, TJ =125°C VGS = - 20V VGS = 20V VGS = -12V, ID = -0.96A, VDS = -50V ns VDD = -50V, ID = -0.96A, VGS = -12V, RG = 7.5Ω µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 390 100 7.0 — — — VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -0.96 -3.84 -5.0 86 240 Test Conditions A V ns nC Tj = 25°C, IS = -0.96A, VGS = 0V Tj = 25°C, IF = -0.96A, di/dt ≤ -100A/µs VDD ≤ -25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 90 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page www.irf.com 3 Radiation Characteristics Pre-Irradiation IRHG567110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (MO-036AB) Diode Forward Voltage 300K Rads (Si)2 Min Max Units Test Conditions 100 2.0 — — — — — 4.0 100 -100 10 0.226 100 2.0 — — — — — 4.0 100 -100 10 0.246 nA µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 80V, VGS = 0V VGS = 12V, ID = 1.0A — 0.29 — 0.31 Ω VGS = 12V, ID = 1.0A — 1.2 — 1.2 V VGS = 0V, IS =1.6A V 1. Part number IRHG567110 2. Part number IRHG563110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) LET 2 (MeV/(mg/cm )) Energy Range (MeV) (µm) VDS (V) @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -20V 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100 61 ± 5% 330 ± 7.5% 31 ± 10% 100 100 100 35 25 84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 - Bias VDS (V) 38 ± 5% 120 100 80 60 40 20 0 LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% 0 -5 -10 -15 -20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page 4 www.irf.com Radiation Characteristics Pre-Irradiation IRHG567110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Min Max Drain-to-Source Breakdown Voltage -100 Gate Threshold Voltage -2.0 Gate-to-Source Leakage Forward — Gate-to-Source Leakage Reverse — Zero Gate Voltage Drain Current — Static Drain-to-Source — On-State Resistance (TO-39) Static Drain-to-Source — On-State Resistance (MO-036AB) Diode Forward Voltage — 300K Rads (Si)2 Min Max — -4.0 -100 100 -10 0.916 -100 -2.0 — — — — — -4.0 -100 100 -10 0.936 0.96 — -3.5 — Test Conditions Units µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V V GS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-0.6A 0.98 Ω VGS = -12V, ID =-0.6A -3.5 V VGS = 0V, IS = -0.96A V nA 1. Part number IRHG567110 2. Part number IRHG563110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) LET 2 (MeV/(mg/cm )) Energy Range (MeV) (µm) VDS (V) @VGS = @VGS = @VGS = @VGS = 0V 5V 10V 15V @VGS = 20V 270 ± 7.5% 35 ± 7.5% -100 -100 -100 -100 -100 61 ± 5% 330 ± 7.5% 30 ± 7.5% -100 -100 -100 -100 -25 84 ± 5% 350 ± 7.5% 28 ± 7.5% -100 -100 -100 -30 - Bias VDS (V) 38 ± 5% -120 -100 -80 -60 -40 -20 0 LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% 0 5 10 15 20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 5 IRHG567110 Pre-Irradiation N-Channel Q1,Q3 10 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 1 5.0V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 10 100 Fig 2. Typical Output Characteristics TJ = 150 ° C TJ = 25 ° C 1 V DS = 50V 20µs PULSE WIDTH 6.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 6 1 VDS , Drain-to-Source Voltage (V) 10 6.0 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 Fig 1. Typical Output Characteristics 5.5 5.0V 1 VDS , Drain-to-Source Voltage (V) 0.1 5.0 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 1.6A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHG567110 N-Channel Q1,Q3 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 600 Ciss 400 Coss 200 Crss 0 1 10 20 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 100 ID = 1.6A FOR TEST CIRCUIT SEE FIGURE 13 0 4 VDS , Drain-to-Source Voltage (V) 10 1 TJ = 25 ° C V GS = 0 V 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 16 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 0.6 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.4 8 QG , Total Gate Charge (nC) 1.4 1 0.1 1ms 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 7 IRHG567110 Pre-Irradiation N-Channel Q1,Q3 RD V DS 1.6 VGS ID , Drain Current (A) D.U.T. RG 1.3 + -V DD VGS 1.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.6 Fig 10a. Switching Time Test Circuit VDS 0.3 0.0 90% 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com Pre-Irradiation IRHG567110 15V D.U.T. RG VGS 20V DRIVER L VDS IAS tp + V - DD 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) N-Channel Q1,Q3 300 ID 0.7A 1.0A BOTTOM 1.6A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature( °C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12 V QGS .2µF .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 9 IRHG567110 Pre-Irradiation P-Channel Q2,Q4 10 10 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) -5.0V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH 5.8 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 10 100 Fig 2. Typical Output Characteristics 2.5 5.6 1 -VDS , Drain-to-Source Voltage (V) 10 5.4 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 Fig 1. Typical Output Characteristics 5.2 -5.0V 1 -VDS , Drain-to-Source Voltage (V) 1 5.0 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -0.96A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHG567110 P-Channel Q2,Q4 600 -VGS , Gate-to-Source Voltage (V) 500 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 400 300 200 Coss 100 Crss 0 1 VDS =-80V VDS =-50V VDS =-20V 16 12 8 4 0 10 ID = -0.96A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 2 -VDS , Drain-to-Source Voltage (V) 6 8 10 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 10 -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 4 QG , Total Gate Charge (nC) TJ = 150 ° C 1 TJ = 25 ° C 0.1 1.0 V GS = 0 V 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1ms 1 0.1 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 11 IRHG567110 Pre-Irradiation P-Channel Q2,Q4 1.0 RD V DS VGS -ID , Drain Current (A) 0.8 D.U.T. RG + 0.6 V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.4 Fig 10a. Switching Time Test Circuit 0.2 td(on) tr t d(off) tf VGS 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 12 www.irf.com Pre-Irradiation IRHG567110 P-Channel Q2,Q4 D.U.T. RG -20V VGS IAS tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) L VDS 500 ID -0.4A -0.6A BOTTOM -0.96A TOP 400 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -12V QGS .2µF .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 50KΩ -12V 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 13 IRHG567110 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25°C, L= 100mH, Peak IL = 1.6A, VGS = 12V ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ 100V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A VDD = - 25V, starting TJ = 25°C, L= 430mH, Peak IL = - 0.96A, VGS = -12V ISD ≤ - 0.96A, di/dt ≤ - 290A/µs, VDD ≤ -100V, TJ ≤ 150°C Case Outline and Dimensions — MO-036AB Q4 Q1 Q3 Q4 Q3 Q1 Q2 Q2 CHANNELS N Ch.- Q1, Q3 P Ch.- Q2, Q4 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2015 14 www.irf.com